Search Results - "SVENSSON, B. G"

Iron and intrinsic deep level states in Ga2O3 by Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu, Svensson, B. G., Alfieri, G., Mihaila, A., Badstübner, U., Vines, L.

“…Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify…”
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Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures by Ayedh, H. M., Nipoti, R., Hallén, A., Svensson, B. G.

“…The carbon vacancy (VC) is a major point defect in high-purity 4H-SiC epitaxial layers limiting the minority charge carrier lifetime. In layers grown by…”
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The E3 center in zinc oxide: Evidence for involvement of hydrogen by Hupfer, A., Bhoodoo, C., Vines, L., Svensson, B. G.

“…Proton implantation is shown to increase the concentration of the so called and commonly observed E3 defect level in zinc oxide (ZnO). Box and single profiles…”
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Hydrogen motion in rutile TiO2 by Hupfer, A. J., Monakhov, E. V., Svensson, B. G., Chaplygin, I., Lavrov, E. V.

“…Uniaxial-stress experiments have been performed for the 3287- and 2445-cm −1 local vibrational modes assigned to the positive charge state of interstitial…”
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Prediction of high efficiency ZnMgO/Si solar cells suppressing carrier recombination by conduction band engineering by Knutsen, K. E., Schifano, R., Marstein, E. S., Svensson, B. G., Kuznetsov, A. Yu

“…A significant conduction band offset appearing in n‐ZnO/p‐Si heterojunction solar cells is recognized as a serious roadblock to obtain high efficiency solar…”
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Structural and morphological properties of ZnO:Ga thin films by Khranovskyy, V., Grossner, U., Nilsen, O., Lazorenko, V., Lashkarev, G.V., Svensson, B.G., Yakimova, R.

“…Zinc oxide (ZnO) is a promising semiconductor material with a great variety of applications. Compared to undoped ZnO, impurity-doped ZnO has a lower…”
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Optical signatures of single ion tracks in ZnO by Vásquez, G. C, Johansen, K. M, Galeckas, A, Vines, L, Svensson, B. G

“…The optical properties of single ion tracks have been studied in ZnO implanted with Ge by combining depth-resolved hyperspectral cathodoluminescence (CL) and…”
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Local vibrational modes of interstitial boron-interstitial oxygen complex in silicon by Murin, L. I., Lastovskii, S. B., Tolkacheva, E. A., Markevich, V. P., Peaker, A. R., Svensson, B. G.

“…In the present work, we report local vibrational mode (LVM) related absorption lines which are assigned to the complex incorporating interstitial boron and…”
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Electronic structure and band parameters for ZnX (X = O, S, Se, Te) by KARAZHANOV, S. Zh, RAVINDRAN, P, KJEKHUS, A, FJELLVAG, H, GROSSNER, U, SVENSSON, B. G

“…First-principles density-functional calculations have been performed for zinc monochalcogenides with zinc-blende- and wurtzite-type structures. It is shown…”
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Hydrogen induced optically-active defects in silicon photonic nanocavities by Boninelli, S, Franzò, G, Cardile, P, Priolo, F, Lo Savio, R, Galli, M, Shakoor, A, O'Faolain, L, Krauss, T F, Vines, L, Svensson, B G

“…We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen…”
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Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO2 capacitors by Filip, L.D., Pintilie, I., Nistor, L.C., Svensson, B.G.

“…As-grown n-4H-SiC/SiO2 capacitors exhibit anomalous capacitance-vs.-voltage (C–V) characteristics at low temperatures. Abrupt minima appear in the C–V curves…”
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Electronic properties of n-ZnO(Al)/p-Si heterojunction prepared by dc magnetron sputtering by Quemener, V., Vines, L., Monakhov, E.V., Svensson, B.G.

“…The electronic properties of the interface between p-type Si and Al-doped ZnO have been investigated. Films of ZnO(Al) with a thickness of 300 nm were…”
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Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation by Knutsen, K. E., Galeckas, A., Zubiaga, A., Tuomisto, F., Farlow, G. C., Svensson, B. G., Kuznetsov, A. Yu

“…By combining results from positron annihilation and photoluminescence spectroscopy with data from Hall effect measurements, the characteristic deep level…”
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Structural, optical and electrical properties of reactively sputtered Ag2Cu2O3 films by LUND, E, GALECKAS, A, MONAKHOV, E. V, SVENSSON, B. G

“…Ag2Cu2O3 thin films were deposited on glass substrates by RF magnetron sputtering of an equiatomic silver-copper target (Ag0.5Cu0.5) in reactive Ar-O2…”
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Ion implantation induced defects in ZnO by Vines, L., Wong-Leung, J., Jagadish, C., Monakhov, E.V., Svensson, B.G.

“…N-type ZnO single crystals have been implanted with 500keV O+ and 1.2MeV Zn+ ions using doses between 1×1011 and 2×1012cm−2, and the generation of deep-level…”
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Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 by Ingebrigtsen, M. E., Kuznetsov, A. Yu, Svensson, B. G., Alfieri, G., Mihaila, A., Badstübner, U., Perron, A., Vines, L., Varley, J. B.

“…Single crystalline bulk and epitaxially grown gallium oxide (β–Ga2O3) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 109 to 6 × 1014 cm−2…”
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Effect of high temperature treatments on defect centers and impurities in hydrothermally grown ZnO by Vines, L., Monakhov, E.V., Svensson, B.G.

“…Deep level transient spectroscopy (DLTS) has been employed to study electron traps in hydrothermally grown n-type ZnO samples after thermal treatments up to…”
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Negative-U system of carbon vacancy in 4H-SiC by Son, N T, Trinh, X T, Løvlie, L S, Svensson, B G, Kawahara, K, Suda, J, Kimoto, T, Umeda, T, Isoya, J, Makino, T, Ohshima, T, Janzén, E

“…Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V(C)) in 4H-SiC and its negative-U properties have been determined. Combining…”
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Influence of temperature during phosphorus emitter diffusion from a spray-on source in multicrystalline silicon solar cell processing by Bentzen, A., Schubert, G., Christensen, J. S., Svensson, B. G., Holt, A.

“…We have investigated the influence of diffusion temperature during phosphorus emitter diffusion from a spray‐on source on the performance of screen‐printed…”
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Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy by Schifano, R., Monakhov, E.V., Svensson, B.G., Mtangi, W., Janse van Rensburg, P., Auret, F.D.

“…Three n-type single crystal hydrothermally grown ZnO samples with resistivities of 5.1±0.6, 15±2 and 220±20 Ω cm, respectively, have been electrically…”
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