Sputtered Cd1-xZnxTe films for top junctions in tandem solar cells

Sputtered Cd1-xZnxTe films for top junctions in tandem solar cells

Cd1-xZnxTe alloy films with 1.6 and 1.7eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (111) preferred orientation were obtained. The films were characterized using...

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Bibliographic Details
Published in:Solar energy materials and solar cells Vol. 86; no. 4; pp. 551 - 563
Main Authors: SUNG HYUN LEES, GUPTA, Akhlesh, SHANLI WANG, COMPAAN, Alvin D, MCCANDLESS, Brian E
Format: Journal Article
Language:English
Published: Amsterdam Elsevier 01-04-2005
Subjects:
Applied sciences
Energy
Equipments, installations and applications
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Tandem solar cell
Scanning electron microscopy
Magnetron
Resistivity
Alloys
Photoluminescence
Polycrystal
X ray diffractometry
Preferred orientation
Optical absorption
Sputtering
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Summary:Cd1-xZnxTe alloy films with 1.6 and 1.7eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (111) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically 0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with CdS as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl2 and ZnCl2, in dry air or H2/Ar ambient at 390 deg C. The best performance of a Cd1-xZnxTe cell (, ) was found for treatment with vapors of the mixed CdCl2+0.5%ZnCl2 in an H2/Ar ambient after pre-annealing at 520 deg C in pure H2/Ar.
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content type line 23
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2004.09.008