Search Results - "STRINGFELLOW, G. B"

Microstructures produced during the epitaxial growth of InGaN alloys by Stringfellow, G.B.

“…Effects due to phase separation in InGaN have been identified as having major effects on the performance of devices, in particular light-emitting diodes (LEDs)…”
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Strain-enhanced doping in semiconductors: effects of dopant size and charge state by Zhu, Junyi, Liu, Feng, Stringfellow, G B, Wei, Su-Huai

“…When a semiconductor host is doped by a foreign element, it is inevitable that a volume change will occur in the doped system. This volume change depends on…”
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Solid phase immiscibility in GaInN by Ho, I-hsiu, Stringfellow, G. B.

“…The large difference in interatomic spacing between GaN and InN is found to give rise to a solid phase miscibility gap. The temperature dependence of the…”
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Enhanced cation-substituted p-type doping in GaP from dual surfactant effects by Zhu, Junyi, Liu, Feng, Stringfellow, G.B.

“…We report first principles calculations demonstrating a dual-surfactant effect of Sb and H on enhanced Zn, Mg, Be and Cd incorporation in organometallic vapor…”
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Epitaxial growth of metastable semiconductor alloys by Stringfellow, G.B.

“…•Review of thermodynamic aspects of metastable semiconductor alloys.•Discussion of kinetic hindrance regarding phase separation.•Consideration of several…”
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Sb and Bi surfactant effects on homo-epitaxy of GaAs on ( [formula omitted]) patterned substrates by Wixom, R.R., Rieth, L.W., Stringfellow, G.B.

“…Anisotropic lateral growth during GaAs ( 0 0 1 ) epitaxy can have dramatic effects on the evolution of patterned features and surface morphology. Many new…”
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Effects of dimethylhydrazine on Zn, C, and H doping of GaP by Howard, A.D., Stringfellow, G.B.

“…Surfactants are beginning to be used during vapor-phase growth to provide control of the materials characteristics of epitaxial layers. This paper reports the…”
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Pyrolysis of 1,1 dimethylhydrazine for OMVPE growth by LEE, R. T, STRINGFELLOW, G. B

“…A key requirement for the growth of the wide bandgap nitrides, GaN and InGaN, is providing a sufficient supply of atomic nitrogen from the vapor phase during…”
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Te surfactant effects on the morphology of patterned (0 0 1) GaAs homoepitaxy by Wixom, R.R., Rieth, L.W., Stringfellow, G.B.

“…The surfactant effects of tellurium on GaAs homoepitaxy were studied by introducing diethyltelluride (DETe) during growth on (0 0 1) patterned substrates. The…”
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Thermodynamic considerations for epitaxial growth of III/V alloys by Stringfellow, G.B.

“…III/V semiconductor alloys have been extensively studied because of their usefulness for electronic and photonic devices. Nevertheless, the search for new…”
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Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode by Niu, X B, Stringfellow, G B, Liu, Feng

“…Equilibrium composition profiles (CPs) of epitaxial alloy quantum dots (QDs) are well established theoretically. However nonequilibrium CPs may occur…”
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Fundamental aspects of organometallic vapor phase epitaxy by Stringfellow, G.B

“…This review discusses new developments in our attempts to understand the fundamental aspects of organometallic vapor phase epitaxy (OMVPE), a process now…”
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Development and current status of organometallic vapor phase epitaxy by Stringfellow, G.B.

“…The first success with the growth of III/V semiconductor materials by OMVPE dates back to the mid-1950s. Today, it is the largest volume technique for the…”
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Dual-surfactant effect to enhance p-type doping in III-V semiconductor thin films by Zhu, J Y, Liu, Feng, Stringfellow, G B

“…Surfactant effects are usually achieved by the addition of a single surface element. We demonstrate by first-principles calculations a dual-surfactant effect…”
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Ordered domain structures of nitrogen-doped GaInP layers grown by organometallic vapor phase epitaxy by Kim, Bong-Joong, Ok, Young-Woo, Seong, Tae-Yeon, Chapman, D. C., Stringfellow, G. B.

“…Transmission electron microscopy (TEM) and atomic force microscopy (AFM) studies have been performed on organometallic vapor phase epitaxial GaInP…”
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Zn enhancement during surfactant-mediated growth of GaInP and GaP by Chapman, D.C., Howard, A.D., Stringfellow, G.B.

“…The addition of surfactants during organometallic vapor phase epitaxy (OMVPE) growth is a novel approach to controlling the surface processes and materials…”
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Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine by RYU, H. H, JEON, M. H, LEEM, J. Y, SONG, H. J, SADWICK, L. P, STRINGFELLOW, G. B

“…Gallium indium phosphide (GaxIn1−xP) epitaxial layers were grown on GaAs substrates by chemical beam epitaxy (CBE) without thermally precracking the group V…”
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Band-gap control of GaInP using Sb as a surfactant by Shurtleff, J. K., Lee, R. T., Fetzer, C. M., Stringfellow, G. B.

“…The use of surfactants to control specific aspects of the vapor-phase epitaxial growth process is beginning to be studied for both the elemental and III/V…”
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Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy by Shurtleff, J. K., Jun, S. W., Stringfellow, G. B.

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Surfactant effects of dopants on ordering in GaInP by Stringfellow, G. B., Lee, R. T., Fetzer, C. M., Shurtleff, J. K., Hsu, Yu, Jun, S. W., Lee, S., Seong, T. Y.

“…The use of surfactants for control of specific aspects of the VPE growth process is beginning to be studied for both the elemental and III/V semiconductors…”
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