Search Results - "SOBOLEV, M. S."

Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption by Timoshnev, S. N., Benemanskaya, G. V., Mizerov, A. M., Sobolev, M. S., Enns, Ya. B.

“…The electronic structure of the epitaxial GaN/Si(111) layers and the Li/GaN/Si(111) interface with a monolayer Li coverage has been studied in situ under…”
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Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice by Babichev, A. V., Pirogov, E. V., Sobolev, M. S., Denisov, D. V., Fominykh, H. A., Baranov, A. I., Gudovskikh, A. S., Melnichenko, I. A., Yunin, P. A., Nevedomsky, V. N., Tokarev, M. V., Ber, B. Ya, Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Egorov, A. Yu

“…The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating…”
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Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface by Seredin, Pavel Vladimirovich, Kurilo, Nikolay, Goloshchapov, Dmitry L., Kashkarov, Vladimir, Lenshin, Aleksandr S., Buylov, Nikita, Nesterov, Dmitry, Mizerov, Andrey, Kukushkin, Sergey A., Timoshnev, S., Shubina, K. Yu, Sobolev, M. S.

“…The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was…”
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Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy by Goray, L. I., Pirogov, E. V., Sobolev, M. S., Ilkiv, I. V., Dashkov, A. S., Vainer, Yu. A., Svechnikov, M. V., Yunin, P. A., Chkhalo, N. I., Bouravlev, A. D.

“…Heterostructures with strongly-coupled multiple quantum wells, such as super-multiperiod superlattices with high perfection, may contain hundreds of layers,…”
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Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy by Sobolev, M. S., Lazarenko, A. A., Mizerov, A. M., Nikitina, E. V., Pirogov, E. V., Timoshnev, S. N., Bouravleuv, A. D.

“…The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes…”
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Study of Endothelio- and Osteoprotective Effects of Combination of Rosuvastatin with L-Norvaline in Experiment by Chernomortseva, E. S., Anikanov, A. V., Dubrovin, G. M., Rajkumar, D. S. R., Gudyrev, O. S., Faitelson, A. V., Sobolev, M. S., Koklina, N. U.

“…The experiment was carried out on 120 female white Wistar rats, to study the endothelio- and osteoprotective action of the combination of rosuvastatin with…”
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Carrier density distribution in AlGaAs/GaAs superlattices with different numbers of quantum wells determined by capacitance-voltage profiling by Vasilkova, E I, Pirogov, E V, Sobolev, M S, Baranov, A I, Gudovskikh, A S, Khabibullin, R A, Bouravleuv, A D

“…Abstract The charge carrier density distribution in uniformly doped AlGaAs/GaAs superlattices with layer thicknesses of 1.5/10 nm and different numbers of…”
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Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs by Lazarenko, A. A., Shubina, K. Yu, Nikitina, E. V., Pirogov, E. V., Mizerov, A. M., Sobolev, M. S.

“…The article investigates the effect of rapid thermal annealing of ternary GaAs 1– x N x /GaAs solid solutions on the distribution of nitrogen atoms in the…”
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Sources of Terahertz Radiation on AlGaAs/GaAs Superlattices by Dashkov, A. S., Gerchikov, L. G., Goray, L. I., Kharin, N. Yu, Sobolev, M. S., Khabibullin, R. A., Bouravleuv, A. D.

“…Several designs are proposed for terahertz emitters based on perfect AlGaAs/GaAs superlattices obtained via molecular-beam epitaxy. Energies of transition,…”
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High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source by Goray, L. I., Pirogov, E. V., Svechnikov, M. V., Sobolev, M. S., Polyakov, N. K., Gerchikov, L. G., Nikitina, E. V., Dashkov, A. S., Borisov, M. M., Yakunin, S. N., Bouravleuv, A. D.

“…The morphology of supermultiperiod Al 0.3 Ga 0.7 As/GaAs superlattices grown by molecular-beam epitaxy has been determined using X-ray reflectometry (including…”
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Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy by Mizerov, A. M., Timoshnev, S. N., Sobolev, M. S., Nikitina, E. V., Shubina, K. Yu, Berezovskaia, T. N., Shtrom, I. V., Bouravleuv, A. D.

“…The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry…”
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Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures by Goray, L. I., Pirogov, E. V., Nikitina, E. V., Ubyivovk, E. V., Gerchikov, L. G., Ipatov, A. N., Dashkov, A. S., Sobolev, M. S., Ilkiv, I. V., Bouravlev, A. D.

“…Promising semiconductor devices, such as quantum-cascade lasers and similar to them heterostructures with multiple strongly-coupled quantum wells, may contain…”
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On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates by Mizerov, A. M., Timoshnev, S. N., Nikitina, E. V., Sobolev, M. S., Shubin, K. Yu, Berezovskaia, T. N., Mokhov, D. V., Lundin, W. V., Nikolaev, A. E., Bouravleuv, A. D.

“…The results obtained in a study of the synthesis of n + -GaN layers by plasma-assisted molecular-beam epitaxy on GaN/ c -Al 2 O 3 templates are reported. In…”
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Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers by Kukushkin, S. A., Mizerov, A. M., Grashchenko, A. S., Osipov, A. V., Nikitina, E. V., Timoshnev, S. N., Bouravlev, A. D., Sobolev, M. S.

“…The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth…”
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Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy by Timoshnev, S. N., Mizerov, A. M., Sobolev, M. S., Nikitina, E. V.

“…The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation…”
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The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT by Nikitina, E. V., Lazarenko, A. A., Pirogov, E. V., Sobolev, M. S., Berezovskaya, T. N.

“…We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic…”
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SODIUM POLYPRENYL PHOSPHATE (PHOSPRENYL) EXERTS AN IL-2-DEPENDENT RESTORATIVE EFFECT UPON IN VIVO DTH INHIBITION by Sobolev, S. M., Nikolaeva, T. N., Grigorieva, E. A., Pronin, A. V.

“…We have shown that polyprenyl phosphate (phosprenyl) competes with interleukin 2 for binding with serum γ-globulin. It was also demonstrated that phosprenyl…”
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ROLE OF LECTIN-SUBSTRANCE RECOGNITION IN IMMUNOREGULATORY INTERACTION BETWEEN INTERLEUKIN-2 IGG by Sobolev, S. M., Nikolaeva, T. N., Grigorjeva, E. A., Pronin, A. V.

“…As assessed by decreased response of ConA-induced blasts to IL-2, a staphylococcal protein A was shown to extract IL-2 from cultural medium after its…”
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Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE by Seredin, P.V., Goloshchapov, D.L., Kostomakha, D.E., Peshkov, Y.A., Buylov, N.S., Ivkov, S.A., Mizerov, A.M., Timoshnev, S.N., Sobolev, M.S., Ubyivovk, E.V., Zemlyakov, V.I.

“…An approach to create ohmic contacts to GaN layers without using the high-temperature annealing procedure is described in the paper. The results of comparative…”
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Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates by Seredin, P.V., Goloshchapov, D.L., Kurilo, N.A., Radam, Ali Obaid, Kashkarov, V.M., Lenshin, A.S., Buylov, N.S., Nesterov, D.N., Mizerov, A.M., Kukushkin, S.A., Timoshnev, S.N., Shubina, K. Yu, Sobolev, M.S.

“…Problems of the growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on hybrid substrates involving porous silicon and silicon carbide layers by…”
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