Search Results - "SMEDES, Theo"
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1
Pitfalls for transient response analysis with VF-TLP
Published in Microelectronics and reliability (01-10-2021)“…Analyzing transient ESD device behavior with TLP equipment requires more attention for implementation and measurement details than the classical quasi-static…”
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2
An integral injector-victim current transfer model for latchup design rule optimization
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01-03-2018)“…This work introduces a derivative-based model to describe the transfer between injector and victim during negative DC current stress. Geometric variation of…”
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Conference Proceeding -
3
Over-stress and under-stress effects in CDM testing
Published in Microelectronics and reliability (01-05-2020)“…This paper describes two mechanisms that can lead to over-stress and/or under-stress when testing ICs for CDM robustness. We show that CDM testing of…”
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4
High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage
Published in IEEE transactions on electron devices (01-07-2019)“…A stacked p-n-p(s) and grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) solution, with higher holding voltage (<inline-formula> <tex-math…”
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5
Gate-Lifted nMOS ESD Protection Device Triggered by a p-n-p in Series With a Diode
Published in IEEE transactions on electron devices (01-04-2019)“…We demonstrate a gate-lifted nMOS electrostatic discharge (ESD) protection device triggered by a p-n-p in series with a diode in a 0.18-<inline-formula>…”
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6
Latchup holding voltages and trigger currents in an SOI technology
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01-04-2016)“…This paper investigates holding voltages and trigger currents in a Silicon-on-Insulator technology. These parameters can be used in automated layout checks…”
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7
Bidirectional ESD Protection Device Using PNP With pMOS-Controlled Nwell Bias
Published in IEEE electron device letters (01-03-2018)“…We demonstrate a PNP-based bidirectional ESD protection device with base bias controlled by two pMOS transistors, realized in a 0.18-<inline-formula> <tex-math…”
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8
CDM Simulation Based on Tester, Package and Full Integrated Circuit Modeling: Case Study
Published in IEEE transactions on electron devices (01-11-2012)“…The electrostatic discharge (ESD) sensitivity of ICs with respect to the charged-device model (CDM) is strongly dependent on the IC package, the substrate…”
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9
A Statistical Explanation of CDM Qualification Variability
Published in 2024 46th Annual EOS/ESD Symposium (EOS/ESD) (16-09-2024)“…CDM testing is known to sometimes have qualification reproducibility problems. This paper discusses possible sources of variability and two statistical…”
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10
On-chip system level protection of FM antenna pin with improved linearity
Published in Microelectronics and reliability (01-12-2011)“…An on-chip protection against IEC 61000-4-2 discharges is presented. The protection level is tested by means of HMM stress. The failure signature is identified…”
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11
An ESD test reduction method for complex devices
Published in Microelectronics and reliability (01-12-2009)“…We define rules to reduce the ESD test complexity for chips with large pin count. These rules exploit the structural similarity in the pad-ring and have a long…”
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12
ESD protection for thin gate oxides in 65nm
Published in Microelectronics and reliability (01-01-2010)Get full text
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13
General chairman's welcome
Published in 2013 35th Electrical Overstress/Electrostatic Discharge Symposium (01-09-2013)“…Presents the introductory welcome message from the conference proceedings…”
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Conference Proceeding -
14
ESD protection for thin gate oxides in 65 nm
Published in Microelectronics and reliability (2010)“…Unexpected functional failures were found in the core of an IC, processed in a 65 nm technology with 1.8 nm gate oxide, after Machine Model (MM) testing,…”
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15
The HBM Tester Parasitics Problem
Published in 2022 44th Annual EOS/ESD Symposium (EOS/ESD) (18-09-2022)“…The HBM standard acknowledges that tester behavior may suffer from parasitics, but limited data has been presented. This paper compares several matrix based…”
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16
Pitfalls for Transient Analysis with VF-TLP
Published in 2020 42nd Annual EOS/ESD Symposium (EOS/ESD) (13-09-2020)“…Analyzing transient ESD device behavior with TLP equipment requires more attention for implementation and measurement details than the classical quasi-static…”
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Conference Proceeding -
17
ESD robust high-voltage active clamps
Published in Microelectronics and reliability (01-12-2009)“…Using circuit simulation extended by a proper failure criterion, the HBM and TLP robustness of high-voltage clamps can be accurately predicted without the need…”
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18
HMM Failure Level Variations Revisited
Published in 2019 41st Annual EOS/ESD Symposium (EOS/ESD) (01-09-2019)“…HMM has been proposed as a standard method to evaluate stand-alone devices with a system level pulse. Mixed results have been published earlier. This paper…”
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19
Wear out effects in ESD characterization and testing
Published in 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) (01-09-2015)“…Wear out effects resulting from multiple stresses may have significant impact on ESD characterization and testing. This is shown in examples of (vf-)TLP, HMM…”
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20
Window effects in HBM and TLP testing
Published in 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) (01-09-2017)“…We present a study of products showing systematic window effects during HBM and TLP testing. It is shown that the window effects are mainly the consequence of…”
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Conference Proceeding