Search Results - "SMEDES, T"
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1
ESD testing of devices, ICs and systems
Published in Microelectronics and reliability (01-09-2009)“…This tutorial discusses several ways of ESD testing for devices, ICs and systems. A good understanding of the methods and the physics is required for relating…”
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2
Pitfalls for CDM calibration procedures
Published in Microelectronics and reliability (01-02-2013)“…A product qualification gave very different results for CDM testing between three labs. This paper describes the investigation into the root cause of these…”
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Journal Article -
3
Selecting an appropriate ESD protection for discrete RF power LDMOSTs
Published in Microelectronics and reliability (01-07-2007)“…For ESD protections of RF Power MOSTs, V t1 lowering by the RF signal – due to the d V/d t effect – can seriously degrade the RF performance. The use of a…”
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4
Study and validation of a power-rail ESD clamp in BiCMOS process with a reduced temperature dependency of its leakage current
Published in Microelectronics and reliability (01-09-2004)Get full text
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5
A case study of ESD failures at random levels: analysis, explanation and solution
Published in Microelectronics and reliability (01-09-2004)Get full text
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6
An analytical model for the Non-Quasi-Static small-signal behaviour of submicron MOSFETs
Published in Solid-state electronics (1995)“…A new, analytical Non-Quasi-Static model, in terms of admittance parameters, for the small-signal behaviour of short channel MOSFETs is presented. The relevant…”
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7
The application of transmission line pulse testing for the ESD analysis of integrated circuits
Published in Journal of electrostatics (01-10-2002)“…Transmission line pulse (TLP) testing is well known for device characterisation in ESD circumstances. In this paper TLP is applied to full-integrated circuits…”
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8
CDM Simulation Based on Tester, Package and Full Integrated Circuit Modeling: Case Study
Published in IEEE transactions on electron devices (01-11-2012)“…The electrostatic discharge (ESD) sensitivity of ICs with respect to the charged-device model (CDM) is strongly dependent on the IC package, the substrate…”
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Significance of including substrate capacitance in the full chip circuit model of ICs under CDM stress
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)“…In the CDM type of ESD, the IC is both the source and part of the discharge current path. To study the CDM performance of an IC, a full-chip circuit model that…”
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10
A simple design methodology for increased ESD robustness of CMOS core cells
Published in ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705) (2003)“…Certain ESD failures are caused by the destruction of a single NMOST finger in a core cell. This can be avoided by making the NMOST fingers wide enough to…”
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11
Pitfalls for CDM calibration procedures : ADVANCES IN ELECTROSTATIC DISCHARGE (ESD) PROTECTION FOR ICs
Published in Microelectronics and reliability (2013)Get full text
Journal Article -
12
Pitfalls for CDM calibration procedures
Published in Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010 (01-10-2010)“…A product qualification gave very different results for CDM testing between 3 labs. This paper describes the investigation into the root cause of these…”
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Conference Proceeding -
13
Analysis of ESD fails in a 45 nm mixed signal SoC
Published in Electrical Overstress / Electrostatic Discharge Symposium Proceedings 2012 (01-09-2012)“…The analysis of ESD qualification fails for a large IC is presented. With a careful procedure all fails are explained. Several failures are related to stress…”
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14
A charge and capacitance model for modern MOSFETs
Published in ESSDERC '90: 20th European Solid State Device Research Conference (01-09-1990)“…A new physical, compact charge and capacitance model for long to submicron size MOSFETs is presented. It includes the important short channel effects and the…”
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15
Practical modeling of the effects of processing fluctuations on circuit behaviour
Published in 1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023) (1997)“…We describe a tool to predict and analyze the effects of processing fluctuations on circuit behaviour. This tool enables the designer to optimize the…”
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16
Statistical modeling and circuit simulation for design for manufacturing
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)“…A method to include effects of statistical fluctuations, inherent to the semiconductor manufacturing process, in circuit simulation models is presented. It…”
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17
Fast computation of substrate resistances in large circuits
Published in Proceedings ED&TC European Design and Test Conference (1996)“…In this paper, we describe a method to quickly and accurately estimate substrate coupling effects in analog and mixed digital/analog integrated circuits…”
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18
Accurate interconnect modeling: Towards multi-million transistor chips as microwave circuits
Published in Proceedings of International Conference on Computer Aided Design (1996)“…In this paper we discuss concepts and techniques for the accurate and efficient modeling and extraction of interconnect parasitics in VLSI designs. Due to…”
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19
Characterization methods to replicate EOS fails
Published in Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2014 (01-09-2014)“…Two methods are proposed to complement traditional TLP methods for characterization of devices and ICs for EOS. These are used to determine the power profile:…”
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20
Extraction of circuit models for substrate cross-talk
Published in International Conference on Computer Aided Design: Proceedings of the 1995 IEEE/ACM international conference on Computer-aided design; 05-09 Nov. 1995 (01-12-1995)“…An increasingly urgent topic for the realization of densely packed (mixed signal) integrated circuits is prevention of cross-talk via the substrate. This paper…”
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