Search Results - "SLADE, M. L"

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    Near-ideal Schottky barrier formation at metal-GaP interfaces by BRILLSON, L. J, VITURRA, R. E, SLADE, M. L, CHIARADIA, P, KILDAY, D, KELLY, M. K, MARGARITONDO, G

    Published in Applied physics letters (11-05-1987)
    “…Soft x-ray photoemission measurements of ultrahigh-vacuum-cleaved GaP (110) surfaces with In, Al, Ge, Cu, and Au overlayers reveal Fermi level stabilization…”
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    Journal Article
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    Reduction of silicon-aluminum interdiffusion by improved semiconductor surface ordering by BRILLSON, L. J, SLADE, M. L, KATNANI, A. D, KELLY, M, MARGARITONDO, G

    Published in Applied physics letters (1984)
    “…Aluminum overlayers on highly ordered single-crystal silicon (100) and (111) surfaces in ultrahigh vacuum exhibit characteristic interface widths less than…”
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    Journal Article
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    Control of titanium-silicon and silicon dioxide reactions by low-temperature rapid thermal annealing by BRILLSON, L. J, SLADE, M. L, RICHTER, H. W, VANDER PLAS, H, FULKS, R. T

    Published in Applied physics letters (15-11-1985)
    “…Auger electron spectroscopy/depth profiling measurements demonstrate that titanium silicide forms between titanium and silicon dioxide at conventional…”
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    Dietary fat and exercise conditioning effect on metabolic parameters in the horse by Hambleton, P.L, Slade, L.M, Hamar, D.W, Kienholz, E.W, Lewis, L.D

    Published in Journal of animal science (01-12-1980)
    “…Four isocaloric diets containing 4, 8, 12 and 16% dietary fat (as soybean oil) were fed to four horses at four intervals according to a Latin square design…”
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    Optical emission properties of metal/InP and GaAs interface states by Viturro, R. E., Slade, M. L., Brillson, L. J.

    “…We have measured optical emission from interface states formed by metal deposition on UHV‐cleaved InP(110) and GaAs(110) surfaces by means of…”
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    Titanium–silicon and silicon dioxide reactions controlled by low temperature rapid thermal annealing by Brillson, L. J., Slade, M. L., Richter, H. W., VanderPlas, H., Fulks, R. T.

    “…Auger electron spectroscopy measurements coupled with sputter depth profiling demonstrate that titanium silicide forms between Ti and SiO2 at conventional…”
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    Cathodoluminescence spectroscopy studies of laser‐annealed metal–semiconductor interfaces by Brillson, L. J., Richter, H. W., Slade, M. L., Weinstein, B. A., Shapira, Y.

    “…We have extended cathodoluminescence spectroscopy (CLS) to the study of new compound and defect formation at metal–semiconductor interfaces. CLS provides…”
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