Search Results - "SKELLERN, D. J"

Derivation of cochannel and adjacent channel reuse ratio distributions in DCA cellular systems by Jones, B.C., Skellern, D.J.

“…This paper presents the first closed-form analysis of cochannel and adjacent channel reuse ratio distributions in dynamic channel assignment (DCA) cellular…”
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Modelling drain and gate dependence of HEMT 1-50 GHz, small-signal S-parameters, and d.c. drain current by Mahon, S.J., Skellern, D.J.

“…We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current…”
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A realistic large-signal MESFET model for SPICE by Parker, A.E., Skellern, D.J.

“…A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented, It…”
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An improved FET model for computer simulators by Parker, A.E., Skellern, D.J.

“…Described is an alternative simple description of FET drain current that provides the flexibility of an extra parameter which can be chosen to approximate the…”
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Optical Technology and Network Requirements [and Discussion] by Catania, B., Hoppitt, C. E., Skellern, D. J.

“…Innovations in telecommunications networks cannot be made without due consideration to the time and resources needed to introduce them throughout the whole…”
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Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias by MAHON, S. J, CHIVERS, M. J, SKELLERN, D. J

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A high-speed wireless LAN by Skellern, D.J., Lee, L.H.C., McDermott, T., Weste, N.H.E., Dalton, J., Graham, J., Wong, T., Myles, A.F., Percival, T.M.P., Ryan, P.J.

“…WLAN systems face technical problems similar to those encountered in outdoor wide-area radio-based systems, including the limited available bandwidth and…”
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Optical Time-Switching Systems [and Discussion] by Hinton, H. S., Midwinter, J. E., Stewart, W. J., Skellern, D. J., Pickthorne, B.

“…Within recent years there has been a significant amount of interest in applying the new and developing photonics technology for telecommunications switching…”
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Radio emission from the 2006 – 56 region by Goss, W. M., Ekers, R. D., Skellern, D. J., Smith, R. M.

“…The steep-spectrum radio source 2006–56 has been mapped with the Fleurs Synthesis Telescope at 1415 MHz with a resolution of 50 arcsec. The radio source is…”
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PIAF: a knowledge-based/algorithm top-down floorplanning system by Jabri, M. A., Skellern, D. J.

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Simultaneous radio and optical observations of Circinus X-1 by Haynes, R. F., Jauncey, D. L., Murdin, P. G., Goss, W. M., Longmore, A. J., Simons, L. W. J., Milne, D. K., Skellern, D. J.

“…Two sets of observations of the Circinus X-l radio source are presented: at 14 GHz during the outburst of 1977 March 6–7 and at 1.4, 2.3, 5.0 and 8.4 GHz…”
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Observations of the Abell cluster 754 by Mills, B. Y., Hunstead, R. W., Skellern, D. J.

“…Maps are presented of the cluster A754 at 1415 and 408 MHz. The redshifts of five galaxies, which may be identified with radio sources in the maps, have been…”
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PIAF: efficient IC floor planning by Jabri, M.A., Skellern, D.J.

“…The authors present a method for selecting an efficient rectangular topology for IC floor plans. PIAF's floor-planning strategy separates generation and…”
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Determination of device structure from GaAs/AlGaAs HEMT DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristic curves by Mahon, S J, Skellern, D J

“…A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from the DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristic is described. The procedure…”
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VLSI for OFDM by Weste, N., Skellern, D.J.

“…This article discusses the VLSI implications of high-speed coded orthogonal frequency-division multiplexing modulation. This is achieved by looking at…”
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Simulations of HEMT DC drain current and 1 to 50 GHz < e1 > S < /e1 > -parameters as a function of gate bias by Mahon, S J, Chivers, M J, Skellern, D J

“…The usefulness over an extended range of a high-electron-mobility transistor (HEMT) model previously validated for a 1-25-GHz < e1 > S < /e1 > -parameter model…”
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A technique for modelling < e1 > S < /e1 > -parameters for HEMT structures as a function of gate bias by Mahon, S J, Skellern, D J, Green, F

“…A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and…”
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Determination of device structure from GaAs/AlGaAs HEMT DC I-V characteristic curves by Mahon, S.J., Skellern, D.J.

“…A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from the DC I-V characteristic is described. The procedure allows important structural…”
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A technique for modelling S-parameters for HEMT structures as a function of gate bias : Process-oriented microwave CAD and modeling by MAHON, S. J, SKELLERN, D. J, GREEN, F

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A technique for modelling S-parameters for HEMT structures as a function of gate bias by Mahon, S.J., Skellern, D.J., Green, F.

“…A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and…”
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