Search Results - "SING YEW, Kwang"
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Al2O3 Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon
Published in IEEE transactions on electron devices (2013)Get full text
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hbox\hbox Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon
Published in IEEE transactions on electron devices (01-01-2013)“…The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a…”
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Implementation of Simple but Powerful Trilayer Oxide-Based Artificial Synapses with a Tailored Bio-Synapse-Like Structure
Published in ACS applied materials & interfaces (08-01-2020)“…The ultimate aim of artificial synaptic devices is to mimic the features of biological synapses as closely as possible, in particular, its ability of…”
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Single ITO/HfOx/TiN Complementary Switch with a Wide Read Voltage Window for Selector-Less Crossbar RRAM Application
Published in 2017 IEEE International Memory Workshop (IMW) (01-05-2017)“…We report the complementary resistance switching (CRS) capability in a single-stack ITO/HfO x /TiN crossbar resistive memory device with a wide read margin…”
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Conference Proceeding -
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In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO x ‑Based Neuristor Array
Published in ACS sensors (27-10-2023)“…With the evolution of artificial intelligence, the explosive growth of data from sensory terminals gives rise to severe energy-efficiency bottleneck issues due…”
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In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfOx-Based Neuristor Array
Published in ACS sensors (27-10-2023)“…With the evolution of artificial intelligence, the explosive growth of data from sensory terminals gives rise to severe energy-efficiency bottleneck issues due…”
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Insights on Inter-metal Reliability Assessment of High Voltage Interconnects
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01-03-2022)“…Reliability qualification of HV interconnects is more complicated due to the additional inter-metal impact under high voltage operation. Typically, this is…”
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Conference Proceeding -
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[Formula Omitted] Interface Engineering of Germanium Epitaxial Layer Grown Directly on Silicon
Published in IEEE transactions on electron devices (01-01-2013)“…The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a…”
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Journal Article -
9
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
Published in Semiconductors (Woodbury, N.Y.) (01-05-2013)“…The algorithm is suggested for calculating the I – V characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The…”
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Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer
Published in Technical physics letters (01-10-2013)“…A technique for diagnostics of the injection properties of thin dielectric layers based on analysis of the data on silicon electroluminescence in a…”
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Optimizing Interconnects RC Variability for Automotive Manufacturing using Novel Advanced Process Control
Published in 2020 IEEE International Interconnect Technology Conference (IITC) (05-10-2020)“…Control of variation in interconnects resistance and capacitance (RC) model due to variability in semiconductor manufacturing is extremely challenging,…”
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Conference Proceeding -
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Interconnects Variability Control for High Voltage Applications
Published in 2021 IEEE International Interconnect Technology Conference (IITC) (06-07-2021)“…Limiting the minimum spacing design rule of intra-metal lines and skipping the inter-metal layer in interconnects for more oxide spacing in order to improve…”
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Conference Proceeding -
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Analysis of Extreme Pattern Density and Interconnects Routing Impacts on Via Open
Published in 2020 IEEE International Interconnect Technology Conference (IITC) (05-10-2020)“…Two phenomena of dual damascene via open in extremely low local metal pattern density region, and when connected through a narrow width metal line to a big pad…”
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Interconnects Electrical Parametric Variability Control for Automotive Manufacturing
Published in 2019 Electron Devices Technology and Manufacturing Conference (EDTM) (01-03-2019)“…The control of interconnects resistance, intra- and inter-capacitance (RC) variations in order to meet the stringent automotive sigma requirements is an…”
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Conference Proceeding