Search Results - "SIEFERT, J. M"

In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces by DREVILLON, B, SATYENDRA KUMAR, ROCI I CABARROCAS, P, SIEFERT, J. M

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Hydrogenated amorphous silicon p-doping with diborane, trimethylboron and trimethylgallium by Lloret, A., Wu, Z. Y., Th ye, M. L., Zawawi, I., Si fert, J. M., Equer, B.

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Growth of hydrogenated amorphous silicon due to controlled ion bombardment from a pure silane plasma by Drevillon, B., Perrin, J., Siefert, J. M., Huc, J., Lloret, A., de Rosny, G., Schmitt, J. P. M.

“…The growth process, optical and structural properties of a-Si:H films deposited from a silane multipole dc discharge are analyzed by real time and…”
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Mass spectrometric study of NF3 plasma etching of silicon by PERRIN, J, MEOT, J, SIEFERT, J.-M, SCHMITT, J

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I n   s i t u investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces by Drevillon, B., Kumar, Satyendra, Roca i Cabarrocas, P., Siefert, J. M.

“…Transparent conducting oxide (TCO)/hydrogenated amorphous silicon (a-Si:H) interfaces are investigated combining kinetic ellipsometry and Kelvin probe…”
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Nucleic acid related compounds. 30. Transformations of adenosine to the first 2',3'-aziridine-fused nucleosides, 9-(2,3-epimino-2,3-dideoxy-.beta.-D-ribofuranosyl)adenine and 9-(2,3-epimino-2,3-dideoxy-.beta.-D-lyxofuranosyl)adenine by Robins, Morris J, Hawrelak, S. D, Kanai, Tadashi, Siefert, Jan Marcus, Mengel, Rudolf

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Large area deposition of a-Si PV modules by Boman, L., Bubenzer, A., Meot, J., Schmitt, J.P.M., Siefert, J.M.

“…Large-area deposition scaling-up (from 30*30 to 50*60 and 60*100 m/sup 2/) is reported within the context of PV (photovoltaic) industrial development…”
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