Search Results - "SHINGUBARA, S"

Synthesis of Vertical High-Density Epitaxial Si(100) Nanowire Arrays on a Si(100) Substrate Using an Anodic Aluminum Oxide Template by Shimizu, T., Xie, T., Nishikawa, J., Shingubara, S., Senz, S., Gösele, U.

“…Growth of vertical epitaxial Si(100) nanowires on Si(100) substrates is demonstrated (see figure) using a combination of an anodic aluminum oxide template,…”
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Effect of asymmetric thin TiN buffer layer for switching in NbOx layer by Hatanaka, R., Morimoto, M., Nakamura, S., Shimizu, T., Ito, T., Shingubara, S.

“…In the coming years, threshold switching based on insulator-metal phase transition (IMT) devices is expected to be applied in selector devices for reducing…”
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Reduction of pitch of nanohole array by self-organizing anodic oxidation after nanoimprinting by Shingubara, S., Maruo, S., Yamashita, T., Nakao, M., Shimizu, T.

“…We investigated a method for controlling the regularity of a single-domain triangular array of nanoholes in anodic aluminum oxide (AAO); the method is a…”
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Synthesis of epitaxial Si(100) nanowires on Si(100) substrate using vapor-liquid-solid growth in anodic aluminum oxide nanopore arrays by SHIMIZU, T, SENZ, S, SHINGUBARA, S, GOSELE, U

“…The synthesis of epitaxial Si nanowires with growth direction parallel to Si [100] on Si(100) substrate was demonstrated using a combination of anodic aluminum…”
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Strain imaging of a perpendicular recording head in a Hard Disk Drive by Takata, K., Kurata, N., Tamura, S., Shingubara, S., Nakahara, S., Tagawa, N., Arai, Y.

“…Imaging of magnetic-field-induced strains using scanning probe microscopy enables us to observe magnetic domain structures and magnetic force distributions…”
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Depth profile analysis of polyimide film treated by potassium hydroxide by Okumura, H., Takahagi, T., Nagai, N., Shingubara, S.

“…The structural change in the depth direction of a polyimide (UPILEX‐S) film treated in alkaline solution, which was a representative surface treatment used to…”
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Conductance change property of the ReRAM with Au-doped HfOx switching layer under DC voltage pulses by Tanaka, M., Okayasu, S., Shimizu, T., Ito, T., Shingubara, S.

“…We fabricated Au-doped and non-doped HfOx ReRAM device and investigated conductance change property under DC pulses. Au-doped device exhibited a hysteresis…”
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Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum by Shingubara, S, Okino, O, Sayama, Y, Sakaue, H, Takahagi, T

“…A highly ordered two-dimensional array of 48 nm Cu wires was successfully fabricated on Si substrate by the usage of anodic oxidation of aluminum (Al) for the…”
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Relaxation of conductance during DC voltage pulse off time in TiN/Hf/HfOx/Au/ HfOx/ TiN -device by Huang, C.Y., Tanaka, M., Shimizu, T., Ito, T., Shingubara, S.

“…We measured conductance change of the TiN/Hf/HfOx/ Au/HfOx/TiN device by applying voltage pulses, and investigated pulse off time dependence of conductance…”
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Aspect ratio dependence of hysteresis property of high density Co wire array buried in porous alumina template by Shingubara, S, Morimoto, K, Nagayanagi, M, Shimizu, T, Yaegashi, O, Wu, G.R, Sakaue, H, Takahagi, T, Takase, K

“…Co wire array with 50nm intervals was formed by electrodeposition in porous alumina template that was formed on Si substrate. Coercive field of Co wire array…”
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Fabrication of Nanomaterials Using Porous Alumina Templates by Shingubara, Shoso

“…Nanofabrication by self-organization methods has attracted much attention owing to the fact that it enables mass production without the use of expensive…”
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Well-size-controlled Colloidal Gold Nanoparticles Dispersed in Organic Solvents by Gen Tsutsui, Gen Tsutsui, Shujuan Huang, Shujuan Huang, Hiroyuki Sakaue, Hiroyuki Sakaue, Shoso Shingubara, Shoso Shingubara, Takayuki Takahagi, Takayuki Takahagi

“…The preparation of well-size-controlled colloidal gold nanoparticles in organic solvent is presented. After the preparation of well-size-controlled aqueous…”
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Effect of Au electrode on the resistance change response of HfO x -based ReRAM device under voltage pulse trains by Shingubara, S., Huang, C.Y., Hatanaka, R., Shimizu, T., Ito, T.

“…The demand for neuromorphic computing is increasing, and resistive random access memory (ReRAM) devices are intriguing candidates for synaptic applications. We…”
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Effect of Au electrode on the resistance change response of HfOx-based ReRAM device under voltage pulse trains by Shingubara, S, Huang, CY, Hatanaka, R, Shimizu, T, Ito, T

“…The demand for neuromorphic computing is increasing, and resistive random access memory (ReRAM) devices are intriguing candidates for synaptic applications. We…”
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Study of a Dielectric Constant Due to Electronic Polarization Using a Semiempirical Molecular Orbital Method I by Yamada, Kotaro, Saiki, Atsushi, Sakaue, Hiroyuki, Shingubara, Shoso, Takayuki Takahagi, Takayuki Takahagi

“…We studied a method for estimating a dielectric constant due to electronic polarization ε (e) using a semiempirical molecular orbital method. Using…”
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Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Arrays Using DNA by Takahagi, T, Tsutsui, G, Huang, S, Sakaue, H, Shingubara, S

“…DNA oligonucleotides are considered to be as a useful tool for fabricating complex structures on a nanometer scale because of their selective reactivity…”
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Improved control of silicon nanowire growth by the vapor–liquid–solid method using a diffusion barrier layer between catalyst and substrate by Koto, Makoto, Shimizu, Tomohiro, Shingubara, Shoso

“…Vapor–liquid–solid (VLS)-grown nanowires are promising building blocks for next-generation devices because of their unique characteristics. Although Au is a…”
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Observation of ultra-high energy density state with x-ray free electron laser SACLA by Maeda, Y., Hironaka, Y., Iwasaki, T., Kawasaki, K., Sakawa, Y., Izumi, T., Ota, M., Egashira, S., Nakagawa, Y., Higashi, N., Sentoku, Y., Kodama, R., Ozaki, N., Matsuoka, T., Somekawa, T., Yabuuchi, T., Inubushi, Y., Togashi, T., Kon, A., Sueda, K., Miyanishi, K., Shingubara, S., Shimizu, T., Okumura, A., Shigemori, K.

“…Typical inertial confinement fusion (ICF) plasmas have ultra-high energy density state (UHEDs) with an energy density exceeding 1 × 108 Jcm−3, which…”
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Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates by Narayanan, V, Sukidi, N, Hu, Chimin, Dietz, N, Bachmann, K.J, Mahajan, S, Shingubara, S

“…GaP layers grown by chemical beam epitaxy in [110] channels fabricated on oxide-patterned (001)silicon substrates have been examined in cross-section by…”
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Vertical and lateral hole aluminum filling characteristics employing electron cyclotron resonance plasma sputtering with high magnetic field by Shingubara, S., Morimoto, N., Takehiro, S., Matsui, Y., Utsunomiya, I., Horiike, Y., Shindo, H.

“…Filling of submicrometer vertical and lateral holes was investigated by employing ECR (electron cyclotron resonance) aluminum sputtering with two times higher…”
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