Search Results - "SHIN, Jaikwang"

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  1. 1

    Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses by Park, Jinjoo, Choi, Jun Hee, Kong, Kiho, Han, Joo Hun, Park, Jung Hun, Kim, Nakhyun, Lee, Eunsung, Kim, Dongho, Kim, Joosung, Chung, Deukseok, Jun, Shinae, Kim, Miyoung, Yoon, Euijoon, Shin, Jaikwang, Hwang, Sungwoo

    Published in Nature photonics (01-06-2021)
    “…e InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap…”
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    Journal Article
  2. 2

    Interfacial adhesion behavior of polyimides on silica glass: A molecular dynamics study by Min, Kyoungmin, Kim, Yaeji, Goyal, Sushmit, Lee, Sung Hoon, McKenzie, Matt, Park, Hyunhang, Savoy, Elizabeth S., Rammohan, Aravind R., Mauro, John C., Kim, Hyunbin, Chae, Kyungchan, Lee, Hyo Sug, Shin, Jaikwang, Cho, Eunseog

    Published in Polymer (Guilford) (19-08-2016)
    “…We investigate the adhesion behavior between polyimide and silica glass using molecular dynamics simulations, which is important for improving the…”
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    Journal Article
  3. 3

    Deep-learning-based inverse design model for intelligent discovery of organic molecules by Kim, Kyungdoc, Kang, Seokho, Yoo, Jiho, Kwon, Youngchun, Nam, Youngmin, Lee, Dongseon, Kim, Inkoo, Choi, Youn-Suk, Jung, Yongsik, Kim, Sangmo, Son, Won-Joon, Son, Jhunmo, Lee, Hyo Sug, Kim, Sunghan, Shin, Jaikwang, Hwang, Sungwoo

    Published in npj computational materials (03-12-2018)
    “…The discovery of high-performance functional materials is crucial for overcoming technical issues in modern industries. Extensive efforts have been devoted…”
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    Journal Article
  4. 4

    Computational approaches for investigating interfacial adhesion phenomena of polyimide on silica glass by Min, Kyoungmin, Rammohan, Aravind R., Lee, Hyo Sug, Shin, Jaikwang, Lee, Sung Hoon, Goyal, Sushmit, Park, Hyunhang, Mauro, John C., Stewart, Ross, Botu, Venkatesh, Kim, Hyunbin, Cho, Eunseog

    Published in Scientific reports (05-09-2017)
    “…This manuscript provides a comprehensive study of adhesion behavior and its governing mechanisms when polyimide undergoes various modes of detachment from…”
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    Journal Article
  5. 5

    Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition by Jeon, Insu, Yang, Heejun, Lee, Sung-Hoon, Heo, Jinseong, Seo, David H, Shin, Jaikwang, Chung, U-In, Kim, Zheong Gou, Chung, Hyun-Jong, Seo, Sunae

    Published in ACS nano (22-03-2011)
    “…Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to investigate the surface morphology and electronic structure…”
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    Journal Article
  6. 6

    Theoretical prediction of fracture conditions for delithiation in silicon anode of lithium ion battery by Cho, Yong-Hee, Booh, Seongwoon, Cho, Eunseog, Lee, Hyosug, Shin, Jaikwang

    Published in APL materials (01-10-2017)
    “…Structural instability such as fractures of a silicon anode in a lithium ion battery, intrinsically induced by the large variation of the ratio, Li/Si, upon…”
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    Journal Article
  7. 7

    Understanding the grain-growth mechanism of high-performance organic semiconducting diphenyl-dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene molecules by Kim, Jung-Hwa, Kwon, Young-Nam, Lee, Eunkyung, Jung, Ji Young, Kim, Joo-Young, Shin, Jaikwang, Park, Jeong-Il, Choi, Ajeong

    Published in Applied physics letters (04-12-2017)
    “…We report here our investigation on the grain-growth mechanism of diphenyl-dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene (DPh-DBTTT), which was…”
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    Journal Article
  8. 8

    Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage by HWANG, Injun, OH, Jaejoon, HYUK SOON CHOI, KIM, Jongseob, CHOI, Hyoji, KIM, Joonyong, CHONG, Soogine, SHIN, Jaikwang, CHUNG, U-In

    Published in IEEE electron device letters (01-05-2013)
    “…A pathway to increase the threshold voltage ( V TH ) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the…”
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    Journal Article
  9. 9

    Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds by Hong, Ki-Ha, Kim, Jongseob, Lee, Jung Hoon, Shin, Jaikwang, Chung, U-In

    Published in Nano letters (12-05-2010)
    “…We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si…”
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    Journal Article
  10. 10

    Three-Dimensional Integration Approach to High-Density Memory Devices by KIM, Hojung, JEON, Sanghun, CHUNG, U-In, LEE, Myoung-Jae, PARK, Jaechul, KANG, Sangbeom, CHOI, Hyun-Sik, PARK, Churoo, HWANG, Hong-Sun, KIM, Changjung, SHIN, Jaikwang

    Published in IEEE transactions on electron devices (01-11-2011)
    “…The three-dimensionally alternating integration of stackable logic devices with memory cells represents a revolutionary approach to the fabrication of…”
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    Journal Article
  11. 11

    Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With \hbox and \hbox Gate Dielectrics by Low-Frequency Noise Measurements by Choi, Hyun-Sik, Jeon, Sanghun, Kim, Hojung, Shin, Jaikwang, Kim, Changjung, Chung, U-In

    Published in IEEE electron device letters (01-08-2011)
    “…To verify the interface state properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with SiN x and SiO 2 gate dielectrics,…”
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    Journal Article
  12. 12

    High performance bilayer oxide transistor for gate driver circuitry implemented on power electronic devices by Sanghun Jeon, Hojung Kim, Hyunsik Choi, Ihun Song, Seung-Eon Ahn, Chang Jung Kim, Jaikwang Shin, U-In Chung, Inkyung Yoo, Kinam Kim

    Published in 2012 Symposium on VLSI Technology (VLSIT) (01-06-2012)
    “…The integration of electronically active oxide transistors onto silicon circuits represents an innovative approach to improving the performance of devices. In…”
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    Conference Proceeding
  13. 13

    A comparative study of structural changes in lithium nickel cobalt manganese oxide as a function of Ni content during delithiation process by Min, Kyoungmin, Kim, Kihong, Jung, Changhoon, Seo, Seung-Woo, Song, You Young, Lee, Hyo Sug, Shin, Jaikwang, Cho, Eunseog

    Published in Journal of power sources (31-05-2016)
    “…First-principles calculations and in-situ X-ray diffraction (XRD) experiment have been performed to investigate the structural changes and potential oxygen…”
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    Journal Article
  14. 14

    Integration of high quality top-gated graphene field effect devices on 150 mm substrate by Jinseong Heo, Hyun-Jong Chung, Sung-Hoon Lee, Heejun Yang, Jaikwang Shin, U-In Chung, Sunae Seo

    Published in 69th Device Research Conference (01-06-2011)
    “…Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth of graphene on Ni or Cu substrates has shown promises for potential…”
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    Conference Proceeding
  15. 15

    p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current by Hwang, Injun, Kim, Jongseob, Choi, Hyuk Soon, Choi, Hyoji, Lee, Jaewon, Kim, Kyung Yeon, Park, Jong-Bong, Lee, Jae Cheol, Ha, Jongbong, Oh, Jaejoon, Shin, Jaikwang, Chung, U-In

    Published in IEEE electron device letters (01-02-2013)
    “…The impact of gate metals on the threshold voltage (V_{\rm TH}) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated…”
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    Journal Article
  16. 16

    Overview of the Oxygen Behavior in the Degradation of Li2MnO3 Cathode Material by Cho, Eunseog, Kim, Kihong, Jung, Changhoon, Seo, Seung-Woo, Min, Kyoungmin, Lee, Hyo Sug, Park, Gyeong-Su, Shin, Jaikwang

    Published in Journal of physical chemistry. C (05-10-2017)
    “…The Li2MnO3 cathode material is vulnerable to complex degradation behaviors during the operation of battery although it has attracted much attention recently…”
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    Journal Article
  17. 17

    Predicting Phosphorescence Quantum Yield for Pt(II)-Based OLED Emitters from Correlation Function Approach by Kim, Inkoo, Son, Won-Joon, Choi, Youn-Suk, Osipov, Alexey, Lee, Dongseon, Lee, Hasup, Jung, Yongsik, Son, Jhunmo, Choi, Hyeonho, Sotoyama, Wataru, Yakubovich, Alexander, Shin, Jaikwang, Lee, Hyo Sug

    Published in Journal of physical chemistry. C (02-05-2019)
    “…We report a new formulation for Golden Rule-based predictions of photoluminescence quantum yields (PLQY) of phosphorescent emitters containing a heavy element,…”
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    Journal Article
  18. 18

    The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility by Choi, Hyun-Sik, Jeon, Sanghun, Kim, Hojung, Shin, Jaikwang, Kim, Changjung, Chung, U-In

    Published in Applied physics letters (23-04-2012)
    “…We investigated low-frequency noise (LFN) characteristics in passivated InZnO thin-film transistors with various active layer thicknesses. These LFNs are…”
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    Journal Article
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