Search Results - "SHIN, Jaikwang"
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Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses
Published in Nature photonics (01-06-2021)“…e InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap…”
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Interfacial adhesion behavior of polyimides on silica glass: A molecular dynamics study
Published in Polymer (Guilford) (19-08-2016)“…We investigate the adhesion behavior between polyimide and silica glass using molecular dynamics simulations, which is important for improving the…”
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Deep-learning-based inverse design model for intelligent discovery of organic molecules
Published in npj computational materials (03-12-2018)“…The discovery of high-performance functional materials is crucial for overcoming technical issues in modern industries. Extensive efforts have been devoted…”
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Computational approaches for investigating interfacial adhesion phenomena of polyimide on silica glass
Published in Scientific reports (05-09-2017)“…This manuscript provides a comprehensive study of adhesion behavior and its governing mechanisms when polyimide undergoes various modes of detachment from…”
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Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition
Published in ACS nano (22-03-2011)“…Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to investigate the surface morphology and electronic structure…”
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Theoretical prediction of fracture conditions for delithiation in silicon anode of lithium ion battery
Published in APL materials (01-10-2017)“…Structural instability such as fractures of a silicon anode in a lithium ion battery, intrinsically induced by the large variation of the ratio, Li/Si, upon…”
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Understanding the grain-growth mechanism of high-performance organic semiconducting diphenyl-dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene molecules
Published in Applied physics letters (04-12-2017)“…We report here our investigation on the grain-growth mechanism of diphenyl-dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene (DPh-DBTTT), which was…”
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Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage
Published in IEEE electron device letters (01-05-2013)“…A pathway to increase the threshold voltage ( V TH ) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the…”
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Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds
Published in Nano letters (12-05-2010)“…We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si…”
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Three-Dimensional Integration Approach to High-Density Memory Devices
Published in IEEE transactions on electron devices (01-11-2011)“…The three-dimensionally alternating integration of stackable logic devices with memory cells represents a revolutionary approach to the fabrication of…”
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Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With \hbox and \hbox Gate Dielectrics by Low-Frequency Noise Measurements
Published in IEEE electron device letters (01-08-2011)“…To verify the interface state properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with SiN x and SiO 2 gate dielectrics,…”
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High performance bilayer oxide transistor for gate driver circuitry implemented on power electronic devices
Published in 2012 Symposium on VLSI Technology (VLSIT) (01-06-2012)“…The integration of electronically active oxide transistors onto silicon circuits represents an innovative approach to improving the performance of devices. In…”
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Conference Proceeding -
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A comparative study of structural changes in lithium nickel cobalt manganese oxide as a function of Ni content during delithiation process
Published in Journal of power sources (31-05-2016)“…First-principles calculations and in-situ X-ray diffraction (XRD) experiment have been performed to investigate the structural changes and potential oxygen…”
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Integration of high quality top-gated graphene field effect devices on 150 mm substrate
Published in 69th Device Research Conference (01-06-2011)“…Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth of graphene on Ni or Cu substrates has shown promises for potential…”
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Conference Proceeding -
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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
Published in IEEE electron device letters (01-02-2013)“…The impact of gate metals on the threshold voltage (V_{\rm TH}) and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated…”
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16
Overview of the Oxygen Behavior in the Degradation of Li2MnO3 Cathode Material
Published in Journal of physical chemistry. C (05-10-2017)“…The Li2MnO3 cathode material is vulnerable to complex degradation behaviors during the operation of battery although it has attracted much attention recently…”
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Predicting Phosphorescence Quantum Yield for Pt(II)-Based OLED Emitters from Correlation Function Approach
Published in Journal of physical chemistry. C (02-05-2019)“…We report a new formulation for Golden Rule-based predictions of photoluminescence quantum yields (PLQY) of phosphorescent emitters containing a heavy element,…”
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The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility
Published in Applied physics letters (23-04-2012)“…We investigated low-frequency noise (LFN) characteristics in passivated InZnO thin-film transistors with various active layer thicknesses. These LFNs are…”
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Overview of the Oxygen Behavior in the Degradation of Li 2 MnO 3 Cathode Material
Published in Journal of physical chemistry. C (05-10-2017)Get full text
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