Search Results - "SHAPPIR, J"

Glutamate sensing with enzyme-modified floating-gate field effect transistors by Braeken, D., Rand, D.R., Andrei, A., Huys, R., Spira, M.E., Yitzchaik, S., Shappir, J., Borghs, G., Callewaert, G., Bartic, C.

“…Neurotransmitter release is the key factor of chemical messaging in the brain. Fast, sensitive and in situ detection of single cell neurotransmitter release is…”
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Dielectric relaxation and porosity determination of porous silicon by Axelrod, E, Givant, A, Shappir, J, Feldman, Y, Sa'ar, A

“…Results of the dielectric spectroscopy study of porous silicon (PS) samples in the frequency range, 20 Hz–1 MHz, and in the temperature range, 173–493 K, are…”
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Infrared photo-induced absorption spectroscopy of porous silicon by Krapf, D., Davidi, A., Shappir, J., Sa'ar, A.

“…The quantum confinement model, which assigns some of the luminescence features in porous silicon to size quantization in Si nano‐crystallites, also predicts…”
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Electrically conductive 2D-PAN-containing surfaces as a culturing substrate for neurons by Oren, R., Sfez, R., Korbakov, N., Shabtai, K., Cohen, A., Erez, H., Dormann, A., Cohen, H., Shappir, J., Spira, M.E., Yitzchaik, S.

“…In the present contribution we report on a novel route to synthesize 2D-polyaniline (2DPAN) on sulfonated-poly(styrene) (SPS) templates by allowing first…”
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Infrared multispectral detection using Si/SixGe1−x quantum well infrared photodetectors by Krapf, D., Adoram, B., Shappir, J., Sa’ar, A., Thomas, S. G., Liu, J. L., Wang, K. L.

“…A modified p-type Si/SiGe quantum well infrared photodetector for multispectral infrared imaging applications is demonstrated. In order to improve the…”
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Pyramid-shaped silicon photodetector with subwavelength aperture [for NSOM] by Chelly, R.A., Cohen, Y., Sa'ar, A., Shappir, J.

“…We present a new type of silicon photodetector with a subwavelength aperture designed to scan material surfaces with a resolution inaccessible by conventional…”
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Photoluminescence anisotropy from laterally anodized porous silicon by Givant, A., Shappir, J., Sa’ar, A.

“…We report on a technique to fabricate planar structures of porous silicon using standard photolithography and processing steps. Uniform stripes of porous…”
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Porous Silicon on Insulator: A New Approach to Fabricate Porous Silicon Based Optoelectronic Devices by Givant, A., Shappir, J., Sa'ar, A.

“…A new fabrication technique of laterally anodized porous silicon is presented. This technique, when applied to bulk silicon wafers, generates a uniform pattern…”
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Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells by Adoram, B., Krapf, D., Shappir, J., Sa’ar, A., Levy, M., Beserman, R., Thomas, S. G., Wang, K. L.

“…Thermal relaxation processes due to strain relaxation and Si/Ge interdiffusion were investigated in pseudomorphic p-type SiGe/Si quantum wells using…”
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Analysis and modeling of floating-gate EEPROM cells by Kolodny, A., Nieh, S.T.K., Eitan, B., Shappir, J.

“…Floating-gate MOS devices using thin tunnel oxide are becoming an acceptable standard in electrically erasable nonvolatile memory. Theoretical and experimental…”
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Thermal relaxation processes in Si1−xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy by Adoram, B, Krapf, D, Levy, M, Beserman, R, Thomas, S, Wang, K.L, Shappir, J, Sa'ar, A

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Novel interface nitridation process for thin gate oxides by Rahat, I., Shappir, J., Ben-Atar, D.

“…A thin (100-200-AA) gate dielectric film which exhibits improved properties as compared to control pure thermal oxides is discussed. The film is obtained by…”
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Generation and anneal of a new kind of interface state in stressed and high-temperature annealed metal-oxide-semiconductor devices by BERGER, M, AVNI, E, SHAPPIR, J

“…Polycrystalline silicon (poly) gate metal-oxide-semiconductor (MOS) transistors were electrically stressed by constant-current tunneling. After the stress the…”
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Oxide trapping under spatially variable oxide electric field in the metal-oxide-silicon structure by AVNI, E, SHAPPIR, J

“…An improved trapping-detrapping model is presented describing the effect of electron injection into the oxide of metal-oxide-silicon devices. The model covers…”
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Reversible transition of extracellular field potential recordings to intracellular recordings of action potentials generated by neurons grown on transistors by Cohen, Ariel, Shappir, Joseph, Yitzchaik, Shlomo, Spira, Micha E.

“…The employment of standard CMOS technology to produce semiconductor chips for recording neuronal activity or for its future use to link neurons and transistors…”
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Effect of high-temperature anneal on interface states generation in stressed metal-oxide-semiconductor devices by BERGER, M, AVNI, E, SHAPPIR, J

“…Polycrystalline silicon gate metal-oxide-semiconductor transistors, fabricated with polycrystalline silicon leads, were repeatedly electrically stressed by…”
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Trap generation and occupation in stressed gate oxides under spatially variable oxide electric field by AVNI, E, SHAPPIR, J

“…The spatial variation of the oxide field in metal-oxide-silicon devices due to charge trapping under electron injection stress is included in a self-consistent…”
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Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement by ALPERN, Y, SHAPPIR, J

“…Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and…”
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Current induced trap generation in SiO2 by Badihi, A., Eitan, B., Cohen, I., Shappir, J.

“…Trap generation in the gate oxide of metal-oxide-semiconductor structure is studied in this work. It is shown that the application of a field of several MV/cm…”
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Determination of SiO2 trapped charge distribution by capacitance-voltage analysis of undoped polycrystalline silicon-oxide-silicon capacitors by NISSAN-COHEN, Y, SHAPPIR, J, FROHMAN-BENTCHKOWSKY, D

“…Capacitance measurements on undoped polycrystalline silicon gate capacitors are used for oxide trapping characterization. In this structure, a field-effect…”
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