Search Results - "SHAOPING TANG"

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    A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects by Nour, Mohamed, Celik-Butler, Zeynep, Sonnet, Arif, Fan-Chi Hou, Shaoping Tang, Mathur, Guru

    Published in IEEE transactions on electron devices (01-04-2016)
    “…Investigating random telegraph signals (RTS) observed in MOS devices is important for studying the gate-oxide defect characteristics and developing simulation…”
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    Journal Article
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    RF CMOS on high-resistivity substrates for system-on-chip applications by Benaissa, K., Jau-Yuann Yang, Crenshaw, D., Williams, B., Sridhar, S., Ai, J., Boselli, G., Song Zhao, Shaoping Tang, Ashburn, S., Madhani, P., Blythe, T., Mahalingam, N., Shichijo, H.S.

    Published in IEEE transactions on electron devices (01-03-2003)
    “…The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive…”
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    Journal Article
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    Pigment Dispersion Contributes to Ocular Immune Privilege in a DBA/2J Mouse Model of Pigmentary Glaucoma by Li, Qian, Pu, Liping, Cheng, Sijie, Tang, Shaoping, Zhang, Jingxue, Qing, Guoping

    “…To investigate the effects of anterior chamber pigment dispersion on ocular immune privilege and the possible mechanisms involved in a DBA/2J mouse model of…”
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    Journal Article
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    Evaluating the minimum thickness of gate oxide on silicon using first-principles method by Tang, Shaoping, Wallace, Robert M, Seabaugh, Alan, King-Smith, Dominic

    Published in Applied surface science (01-09-1998)
    “…The continuing reduction in integrated circuit element size results in contemplating physical structures with dimensions in which an atomistic picture becomes…”
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    Journal Article
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    Identification of Channel Hot Carrier Stress-Induced Oxide Traps Leading to Random Telegraph Signals in pMOSFETs by Ahmed, Tanvir, Celik-Butler, Zeynep, Hou, Fan-Chi, Tang, Shaoping, Mathur, Guru

    Published in IEEE transactions on electron devices (01-02-2021)
    “…We investigated the effect of channel hot carrier (CHC) stressing on the creation of gate oxide defect centers causing random telegraph signals (RTSs) in…”
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    Journal Article
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    Changes in Quality of Fruits during Maturity of Four Main Citrus Varieties in Ruili, Yunnan by Yanfen YANG, Minxian DUAN, Birong ZHANG, Suyun YAN, Wenbin SHI, Shaoping TANG, Li PAN, Xianyan ZHOU

    Published in Guangdong nong ye ke xue (01-04-2024)
    “…【Objective】The study aims to explore the change law of fruit quality of the main citrus varieties in Ruili area of Yunnan Province during maturity, offering a…”
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    Journal Article
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    Two Types of ^ Centers as Gate Oxide Defects Responsible for Hole Trapping and Random Telegraph Signals in pMOSFETs by Shamsur Rouf, A.S.M., Celik-Butler, Zeynep, Hou, Fan-Chi, Tang, Shaoping, Mathur, Guru

    Published in IEEE transactions on electron devices (01-10-2018)
    “…We report on the investigation of random telegraph signals (RTSs) in pMOSFETs at variable temperatures to identify and characterize the hole traps residing at…”
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    Journal Article
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    Variability of random telegraph noise in analog MOS transistors by Nour, Mohamed, Mahmud, M. Iqbal, Celik-Butler, Zeynep, Basu, Debarshi, Shaoping Tang, Fan-Chi Hou, Wise, Rick

    “…Random telegraph signals (RTS) are investigated on MOSFETs where a systematic procedure is developed to extract the RTS parameters from a large volume of…”
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    Conference Proceeding
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    Device physics impact on low leakage, high speed DSP design techniques by Scott, D., Shaoping Tang, Song Zhao, Nandakumar, M.

    “…The limitations of implementing low leakage schemes and their application to current state of the art components is discussed In addition to source…”
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    Conference Proceeding
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    Proton trapping and diffusion in SiO 2 thin films: a first-principles study by Zhang, Qiming, Tang, Shaoping, Wallace, Robert M.

    Published in Applied surface science (2001)
    “…The behavior of mobile protons at the Si/SiO 2 interface has drawn substantial interest since it was found to play the critical role in a proposed non-volatile…”
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    Journal Article
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    Phosphorus-induced relaxation in an iron grain boundary : a cluster-model study by SHAOPING TANG, FREEMAN, A. J, OLSON, G. B

    Published in Physical review. B, Condensed matter (01-02-1993)
    “…The DMol molecular-cluster method, based on local density-functional theory, is employed to study the electronic structure and structural relaxation of a…”
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    Journal Article
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    A 25 mV-startup cold start system with on-chip magnetics for thermal energy harvesting by Garcha, Preet, El-Damak, Dina, Desai, Nachiket, Troncoso, Jorge, Mazotti, Erika, Mullenix, Joyce, Tang, Shaoping, Trombley, Django, Buss, Dennis, Lang, Jeffrey, Chandrakasan, Anantha

    “…Thermal energy harvesting systems use boost converters for high-efficiency low voltage operation, but lack the ability for low voltage startup without off-chip…”
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    Conference Proceeding
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    RF CMOS on high-resistivity substrates for system-on-chip applications by Benaissa, K, Yang, Jau-Yuann, Crenshaw, D, Williams, B, Sridhar, S, Ai, J., Boselli, G, Zhao, Song, Tang, Shaoping, Shichijo, H S

    Published in IEEE transactions on electron devices (01-03-2003)
    “…The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive…”
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    Journal Article
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    Energetics of void enlargement in thermally grown ultrathin Si-oxide on Si(001) by Tang, Shaoping, Wei, Yi, Wallace, Robert M.

    Published in Surface science (08-10-1997)
    “…The energetics of void enlargement in ultrathin Si-oxide are investigated by first principles density functional theory calculations and scanning tunneling…”
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    Journal Article
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