Search Results - "SEO, Sunae"

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures by Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Chang, Man, Hur, Ji Hyun, Kim, Young-Bae, Kim, Chang-Jung, Seo, David H., Seo, Sunae, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam

“…Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the…”
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Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer by Pi, Ung Hwan, Won Kim, Kee, Bae, Ji Young, Lee, Sung Chul, Cho, Young Jin, Kim, Kwang Seok, Seo, Sunae

“…We devised a method to measure the virtual magnetic field induced by Rashba effect in ferromagnetic metal layer. Transverse Rashba magnetic field makes the…”
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Observation of electric-field induced Ni filament channels in polycrystalline NiOx film by Park, Gyeong-Su, Li, Xiang-Shu, Kim, Dong-Chirl, Jung, Ran-Ju, Lee, Myoung-Jae, Seo, Sunae

“…For high density of resistive random access memory applications using NiOx films, understanding of the filament formation mechanism that occurred during the…”
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Robust graphene wet transfer process through low molecular weight polymethylmethacrylate by Kim, Seonyeong, Shin, Somyeong, Kim, Taekwang, Du, Hyewon, Song, Minho, Lee, ChangWon, Kim, Kisoo, Cho, Seungmin, Seo, David H., Seo, Sunae

“…Poly (methyl methacrylate) (PMMA) is commonly used during the transfer process of chemical vapor deposited (CVD) graphene. Since PMMA on graphene surfaces is…”
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Random Circuit Breaker Network Model for Unipolar Resistance Switching by Chae, Seung Chul, Lee, Jae Sung, Kim, Sejin, Lee, Shin Buhm, Chang, Seo Hyoung, Liu, Chunli, Kahng, Byungnam, Shin, Hyunjung, Kim, Dong-Wook, Jung, Chang Uk, Seo, Sunae, Lee, Myoung-Jae, Noh, Tae Won

“…The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving…”
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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics by Lee, Young Gon, Kang, Chang Goo, Jung, Uk Jin, Kim, Jin Ju, Hwang, Hyeon Jun, Chung, Hyun-Jong, Seo, Sunae, Choi, Rino, Lee, Byoung Hun

“…Device instabilities of graphene metal-oxide-semiconductor field effect transistors such as hysteresis and Dirac point shifts have been attributed to charge…”
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Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition by Kim, Yong Seung, Lee, Jae Hong, Kim, Young Duck, Jerng, Sahng-Kyoon, Joo, Kisu, Kim, Eunho, Jung, Jongwan, Yoon, Euijoon, Park, Yun Daniel, Seo, Sunae, Chun, Seung-Hyun

“…A single-layer graphene is synthesized on Cu foil in the absence of H(2) flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H(2)…”
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Robust bi-stable memory operation in single-layer graphene ferroelectric memory by Song, Emil B., Lian, Bob, Min Kim, Sung, Lee, Sejoon, Chung, Tien-Kan, Wang, Minsheng, Zeng, Caifu, Xu, Guangyu, Wong, Kin, Zhou, Yi, Rasool, Haider I., Seo, David H., Chung, Hyun-Jong, Heo, Jinseong, Seo, Sunae, Wang, Kang L.

“…With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene…”
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The structural and electrical evolution of graphene by oxygen plasma-induced disorder by Kim, Dong Chul, Jeon, Dae-Young, Chung, Hyun-Jong, Woo, YunSung, Shin, Jai Kwang, Seo, Sunae

“…Evolution of a single graphene layer with disorder generated by remote oxygen plasma irradiation is investigated using atomic force microscopy, Raman…”
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Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices by Lee, Sejoon, Song, Emil B., Kim, Sungmin, Seo, David H., Seo, Sunae, Won Kang, Tae, Wang, Kang L.

“…Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory…”
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Formation of unconventional standing waves at graphene edges by valley mixing and pseudospin rotation by Park, Changwon, Yang, Heejun, Mayne, Andrew J, Dujardin, Gérald, Seo, Sunae, Kuk, Young, Ihm, Jisoon, Kim, Gunn

“…We investigate the roles of the pseudospin and the valley degeneracy in electron scattering at graphene edges. It is found that they are strongly correlated…”
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Interaction and ordering of vacancy defects in NiO by Park, Sohee, Ahn, Hyo-Shin, Lee, Choong-Ki, Kim, Hanchul, Jin, Hosub, Lee, Hyo-Sug, Seo, Sunae, Yu, Jaejun, Han, Seungwu

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Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures by Park, Chanwoo, Jeon, Sang Ho, Chae, Seung Chul, Han, Seungwu, Park, Bae Ho, Seo, Sunae, Kim, Dong-Wook

“…We investigated the resistive switching characteristics of two types of Pt∕NiO∕Pt structures with epitaxial and polycrystalline NiO layers. Both of these…”
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The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects by Kim, Dahye, Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Kim, Seonyeong, Song, Minho, Lee, ChangWon, Lee, Jaeung, Cheong, Hyeonsik, Seo, David H., Seo, Sunae

“…We intentionally generated surface defects in WSe2 using a low energy argon (Ar+) ion-beam. We were unable to detect any changes in lattice structure through…”
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Passivation of Metal Surface States: Microscopic Origin for Uniform Monolayer Graphene by Low Temperature Chemical Vapor Deposition by Jeon, Insu, Yang, Heejun, Lee, Sung-Hoon, Heo, Jinseong, Seo, David H, Shin, Jaikwang, Chung, U-In, Kim, Zheong Gou, Chung, Hyun-Jong, Seo, Sunae

“…Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to investigate the surface morphology and electronic structure…”
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Graphene Interconnect Lifetime: A Reliability Analysis by Xiangyu Chen, Seo, D. H., Sunae Seo, Hyunjong Chung, Wong, H.-S Philip

“…Understanding the breakdown current density is not enough for establishing the reliability performance of graphene interconnects. It is more important to know…”
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Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors by Du, Hyewon, Kim, Taekwang, Shin, Somyeong, Kim, Dahye, Kim, Hakseong, Sung, Ji Ho, Lee, Myoung Jae, Seo, David H., Lee, Sang Wook, Jo, Moon-Ho, Seo, Sunae

“…We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS2 transistors. Ti-MoS2-graphene heterojunction transistors using…”
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Probing nanoscale conductance of monolayer graphene under pressure by Kwon, Sangku, Choi, Sunghyun, Chung, H. J., Yang, Heejun, Seo, Sunae, Jhi, Seung-Hoon, Young Park, Jeong

“…The correlation between charge transport and mechanical deformation of the single layer graphene layer was studied with conductive probe atomic force…”
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A Full Adder Design Using Serially Connected Single-Layer Magnetic Tunnel Junction Elements by LEE, Seungyeon, SEO, Sunae, LEE, Seungjun, SHIN, Hyungsoon

“…Magnetic tunnel junction (MTJ) elements based magnetologic promises many advantages over conventional CMOS logic devices. MTJ elements can be configured by…”
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Electron doping and stability enhancement of doped graphene using a transparent polar dielectric film by Shin, Somyeong, Du, Hyewon, Kim, Taekwang, Kim, Seonyeong, Kim, Ki Soo, Cho, Seungmin, Lee, Chang-Won, Seo, Sunae

“…LiF is a transparent polar dielectric with the highest band gap among known insulators. The introduction of a LiF/graphene stacked structure provides two…”
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