Search Results - "SCHWALKE, Udo"

Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data by Zaunert, Florian, Endres, Ralf, Stefanov, Yordan, Schwalke, Udo

“…The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device…”
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Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications by Safari, Fatemeh, Moradinasab, Mahdi, Schwalke, Udo, Filipovic, Lado

“…The first-principles calculation of pristine, B-, Al-, Ga-, Sb-, and Bi-doped blue phosphorene (BlueP) with adsorbed SO2, NO, and NO2 gas molecules including…”
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Process integration and nanometer-scale electrical characterization of crystalline high- k gate dielectrics by Schwalke, Udo, Stefanov, Yordan

“…Crystalline praseodymium oxide (Pr 2O 3) high- k gate dielectric has been successfully integrated into a polysilicon gate CMOS technology. Fully functional…”
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Gate dielectrics: process integration issues and electrical properties by Udo Schwalke

“…In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with…”
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Ultra-thick gate oxides: charge generation and its impact on reliability by Schwalke, Udo, Pölzl, Martin, Sekinger, Thomas, Kerber, Martin

“…In this work, degradation and breakdown characteristics of ultra-thick gate oxides ( T ox: 50–150 nm) used in power MOS devices is investigated. Measurements…”
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Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics by Wessely, Pia Juliane, Schwalke, Udo

“…•Bilayer graphene FETs suitable for applications in nanoelectronics.•Application as memory devices in nanoelectronics after appropriate downscaling.•Bilayer…”
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On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices by Schwarz, Mike, Calvet, Laurie E., Snyder, John P., Krauss, Tillmann, Schwalke, Udo, Kloes, Alexander

“…The physical influence of temperature down to the cryogenic regime is analyzed in a comprehensive study and the comparison of IV and III-V Schottky barrier…”
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Transfer-free grown bilayer graphene transistors for digital applications by Wessely, Pia Juliane, Wessely, Frank, Birinci, Emrah, Riedinger, Bernadette, Schwalke, Udo

“…► Transfer-free and in situ grown bilayer graphene field effect transistors. ► Bilayer graphene FETs possess an extremely high on/off-current ratio up to 1E7…”
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Damascene TiN-Gd2O3-gate stacks: Gentle fabrication and electrical properties by ENDRES, Ralf, KRAUSS, Tillmann, WESSELY, Frank, SCHWALKE, Udo

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Dual-Workfunction Gate Engineering in a Corner Parasitics-Free Shallow-Trench-Isolation Complementary-Metal-Oxide-Semiconductor Technology by Schwalke, Udo, Füldner, Marc, Bothe, WalterZatsch, Janssen, DariuschHadawi, Schon, Peter

“…In this work, through-the-gate implantation (TGI) of channel- and well-doping is favorably combined with n + /p + gate implantation. This approach offers an…”
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Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High- \kappa Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio by Rispal, L., Schwalke, U.

“…In this letter, we report on measurements of carbon nanotube (CNT) field-effect transistors with high on/off ratio to be used as nonvolatile memory cells…”
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Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio by Wessely, Pia Juliane, Wessely, Frank, Birinci, Emrah, Beckmann, Karsten, Riedinger, Bernadette, Schwalke, Udo

“…By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors…”
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Damascene TiN-Gd sub(2O) sub(3)-gate stacks: Gentle fabrication and electrical properties by Endres, Ralf, Krauss, Tillmann, Wessely, Frank, Schwalke, Udo

“…In this work, we present MOS capacitors and field effect transistors with a crystalline gadolinium oxide (Gd sub(2O) sub(3)) gate dielectric and metal gate…”
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Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology by Endres, Ralf, Stefanov, Yordan, Schwalke, Udo

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Damascene TiN–Gd 2O 3-gate stacks: Gentle fabrication and electrical properties by Endres, Ralf, Krauss, Tillmann, Wessely, Frank, Schwalke, Udo

“…In this work, we present MOS capacitors and field effect transistors with a crystalline gadolinium oxide (Gd 2O 3) gate dielectric and metal gate electrode…”
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Silicon-CMOS Compatible Transfer-Free Fabrication of Nanocrystalline Graphene Field-Effect Devices for Smart Gas-Sensor Applications by Schwalke, Udo, Noll, Dennis

“…We report on a method to mass-fabricate graphene-based ultra-sensitive gas sensors on oxidized silicon wafers without the need to transfer graphene layers. By…”
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Computation beyond moore's law: Adaptive field-effect devices for reconfigurable logic and hardware-based neural networks by Schwalke, Udo

“…The success of integrated silicon technology is based on the down-scaling of minimum feature sizes of silicon field-effect devices (MOSFETs) in a complementary…”
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Dopant-independent and voltage-selectable silicon-nanowire-CMOS technology for reconfigurable logic applications by Wessely, Frank, Krauss, Tillmann, Schwalke, Udo

“…In this paper, we report on the fabrication and characterization of a novel voltage-selectable (VS) nanowire (NW) CMOS technology suitable to extend the…”
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Process damage-free damascene metal gate technology for gentle integration of epitaxially grown high- k by Endres, Ralf, Stefanov, Yordan, Wessely, Frank, Zaunert, Florian, Schwalke, Udo

“…This paper presents the first successful attempt to integrate crystalline high- k gate dielectrics into a virtually damage-free damascene metal gate process…”
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Electrical characterization of crystalline Gd 2O 3 gate dielectric MOSFETs fabricated by damascene metal gate technology by Endres, Ralf, Stefanov, Yordan, Schwalke, Udo

“…This paper presents the first successful attempt to integrate crystalline high- K gate dielectrics into a virtually damage-free damascene metal gate process…”
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