Search Results - "SCHROTT, Alejandro"
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1
Wireless Sensor Platform for Cultural Heritage Monitoring and Modeling System
Published in Sensors (Basel, Switzerland) (31-08-2017)“…Results from three years of continuous monitoring of environmental conditions using a wireless sensor platform installed at The Cloisters, the medieval branch…”
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2
Atomic layer deposition of Ge2Sb2Te5 thin films
Published in Microelectronic engineering (01-07-2009)Get full text
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3
Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO2 Interface
Published in The journal of physical chemistry. B (10-02-2005)“…Monolayer islands of pentacene deposited on silicon substrates with thermally grown oxides were studied by electric force microscopy (EFM) and scanning Kelvin…”
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4
The formation of chlorine-induced alterations in daguerreotype image particles: a high resolution SEM-EDS study
Published in Applied physics. A, Materials science & processing (01-10-2011)“…The daguerreotype image, composed of nanosized silver–mercury or silver–mercury–gold amalgam particles formed on a polished silver substrate, is particularly…”
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5
Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO 2 Interface
Published in The journal of physical chemistry. B (10-02-2005)Get full text
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6
Demonstration of CAM and TCAM Using Phase Change Devices
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01-05-2011)“…We demonstrate novel designs for Content Addressable Memory (CAM) and Ternary CAM (TCAM) using Phase Change Memory (PCM) technology, which can potentially…”
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Conference Proceeding -
7
Dynamic Resistance-A Metric for Variability Characterization of Phase-Change Memory
Published in IEEE electron device letters (01-02-2009)“…The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R d ) is found to be inversely proportional to the…”
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8
Atomic layer deposition of Ge@@d2@Sb@@d2@Te@@d5@ thin films
Published in Microelectronic engineering (01-09-2009)“…Ge@@d2@Sb@@d2@Te@@d5@ (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition…”
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9
Atomic layer deposition of Ge 2Sb 2Te 5 thin films
Published in Microelectronic engineering (2009)“…Ge 2Sb 2Te 5 (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition was studied…”
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10
Electrostatic field and partial Fermi level pinning at the pentacene-SiO(2) interface
Published in The journal of physical chemistry. B (10-02-2005)“…Monolayer islands of pentacene deposited on silicon substrates with thermally grown oxides were studied by electric force microscopy (EFM) and scanning Kelvin…”
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Journal Article -
11
The impact of melting during reset operation on the reliability of phase change memory
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01-04-2012)“…Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced…”
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12
Magnetic arrays and their resonant frequencies for the production of binary codes
Published in IEEE transactions on magnetics (01-09-1998)“…An array of cantilevers of varying lengths containing at least a layer of magnetic material has been fabricated to produce oscillations at the resonant…”
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13
A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01-05-2011)“…This paper presents a novel reconfigurable sensing scheme with the flexibility to change reading precision of analog resistance levels for MLC PCM. A 2Mcell…”
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14
Phase-Change Memory Development Status
Published in 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01-04-2007)“…This paper reviews the current development status of phase-change memory (PCM) and discusses the development road map for phase-change memory…”
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Conference Proceeding