Search Results - "SCHROEDER, Uwe"

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  1. 1

    The fundamentals and applications of ferroelectric HfO2 by Schroeder, Uwe, Park, Min Hyuk, Mikolajick, Thomas, Hwang, Cheol Seong

    Published in Nature reviews. Materials (01-08-2022)
    “…Since the first report of ferroelectricity in a Si-doped HfO 2 film in 2011, HfO 2 -based materials have attracted much interest from the ferroelectric…”
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    Journal Article
  2. 2

    Incipient Ferroelectricity in Al-Doped HfO2 Thin Films by Mueller, Stefan, Mueller, Johannes, Singh, Aarti, Riedel, Stefan, Sundqvist, Jonas, Schroeder, Uwe, Mikolajick, Thomas

    Published in Advanced functional materials (06-06-2012)
    “…Incipient ferroelectricity is known to occur in perovskites such as SrTiO3, KTaO3, and CaTiO3. For the first time it is shown that the intensively researched…”
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    Journal Article
  3. 3

    On the structural origins of ferroelectricity in HfO2 thin films by Sang, Xiahan, Grimley, Everett D., Schenk, Tony, Schroeder, Uwe, LeBeau, James M.

    Published in Applied physics letters (20-04-2015)
    “…Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field…”
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    Journal Article
  4. 4

    Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2 by Pešić, Milan, Hoffmann, Michael, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe

    Published in Advanced functional materials (02-11-2016)
    “…To date antiferroelectrics have not been considered as nonvolatile memory elements because a removal of the external field causes a depolarization, resulting…”
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    Journal Article
  5. 5

    Complex Internal Bias Fields in Ferroelectric Hafnium Oxide by Schenk, Tony, Hoffmann, Michael, Ocker, Johannes, Pešić, Milan, Mikolajick, Thomas, Schroeder, Uwe

    Published in ACS applied materials & interfaces (16-09-2015)
    “…For the rather new hafnia- and zirconia-based ferroelectrics, a lot of questions are still unsettled. Among them is the electric field cycling behavior…”
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    Journal Article
  6. 6

    Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 by Hoffmann, Michael, Pešić, Milan, Chatterjee, Korok, Khan, Asif I., Salahuddin, Sayeef, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas

    Published in Advanced functional materials (20-12-2016)
    “…To further reduce the power dissipation in nanoscale transistors, the fundamental limit posed by the Boltzmann distribution of electrons has to be overcome…”
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    Journal Article
  7. 7

    Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors by Pešić, Milan, Fengler, Franz Paul Gustav, Larcher, Luca, Padovani, Andrea, Schenk, Tony, Grimley, Everett D., Sang, Xiahan, LeBeau, James M., Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas

    Published in Advanced functional materials (05-07-2016)
    “…Novel hafnium oxide (HfO2)‐based ferroelectrics reveal full scalability and complementary metal oxide semiconductor integratability compared to…”
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    Journal Article
  8. 8

    Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films by Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Müller, Johannes, Kersch, Alfred, Schroeder, Uwe, Mikolajick, Thomas, Hwang, Cheol Seong

    Published in Advanced materials (Weinheim) (18-03-2015)
    “…The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is reported. Most ferroelectric thin film research focuses on…”
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    Journal Article
  9. 9

    Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films by Chernikova, Anna G, Kozodaev, Maxim G, Negrov, Dmitry V, Korostylev, Evgeny V, Park, Min Hyuk, Schroeder, Uwe, Hwang, Cheol Seong, Markeev, Andrey M

    Published in ACS applied materials & interfaces (24-01-2018)
    “…Hf0.5Zr0.5O2 thin films are one of the most appealing HfO2-based ferroelectric thin films, which have been researched extensively for their applications in…”
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    Journal Article
  10. 10

    Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material by Schroeder, Uwe, Richter, Claudia, Park, Min Hyuk, Schenk, Tony, Pešić, Milan, Hoffmann, Michael, Fengler, Franz P. G, Pohl, Darius, Rellinghaus, Bernd, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L, Mikolajick, Thomas

    Published in Inorganic chemistry (05-03-2018)
    “…Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric…”
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    Journal Article
  11. 11

    HfxZr1 − xO2 thin films for semiconductor applications: An Hf- and Zr-ALD precursor comparison by Materano, Monica, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe

    “…In the last few years, hafnium oxide (HfO2), zirconium oxide (ZrO2), and their intermixed system (HfxZr1 − xO2) have aroused more and more interest due to…”
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    Journal Article
  12. 12

    Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors by Mulaosmanovic, Halid, Ocker, Johannes, Müller, Stefan, Schroeder, Uwe, Müller, Johannes, Polakowski, Patrick, Flachowsky, Stefan, van Bentum, Ralf, Mikolajick, Thomas, Slesazeck, Stefan

    Published in ACS applied materials & interfaces (01-02-2017)
    “…The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both…”
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    Journal Article
  13. 13

    Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf0.5Zr0.5O2 Thin Films by Mehmood, Furqan, Mikolajick, Thomas, Schroeder, Uwe

    “…Since the discovery of ferroelectricity in thin doped hafnium oxide layers, there is a rapidly growing interest in the implementation of this material into…”
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    Journal Article
  14. 14

    Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides by Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong

    Published in Advanced electronic materials (01-03-2019)
    “…Ferroelectricity in fluorite structure oxides such as HfO2 and ZrO2 has been intensively studied since the first report on it in 2011. The ferroelectricity in…”
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    Journal Article
  15. 15

    Polarization switching in thin doped HfO2 ferroelectric layers by Materano, Monica, Lomenzo, Patrick D., Mulaosmanovic, Halid, Hoffmann, Michael, Toriumi, Akira, Mikolajick, Thomas, Schroeder, Uwe

    Published in Applied physics letters (28-12-2020)
    “…The deployment of ferroelectrics in device concepts such as Ferroelectric Random Access Memory and Ferroelectric Field Effect Transistors requires a good…”
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    Journal Article
  16. 16

    Many routes to ferroelectric HfO2: A review of current deposition methods by Hsain, Hanan Alexandra, Lee, Younghwan, Materano, Monica, Mittmann, Terence, Payne, Alexis, Mikolajick, Thomas, Schroeder, Uwe, Parsons, Gregory N., Jones, Jacob L.

    “…Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO2), researchers are still intensely fascinated by this material system…”
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    Book Review Journal Article
  17. 17

    Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2 Thin Films by Grimley, Everett D., Schenk, Tony, Sang, Xiahan, Pešić, Milan, Schroeder, Uwe, Mikolajick, Thomas, LeBeau, James M.

    Published in Advanced electronic materials (01-09-2016)
    “…Since 2011, ferroelectric HfO2 has attracted growing interest in both fundamental and application oriented groups. In this material, noteworthy wake‐up and…”
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    Journal Article
  18. 18

    Piezoelectricity in hafnia by Dutta, Sangita, Buragohain, Pratyush, Glinsek, Sebastjan, Richter, Claudia, Aramberri, Hugo, Lu, Haidong, Schroeder, Uwe, Defay, Emmanuel, Gruverman, Alexei, Íñiguez, Jorge

    Published in Nature communications (15-12-2021)
    “…Because of its compatibility with semiconductor-based technologies, hafnia (HfO 2 ) is today’s most promising ferroelectric material for applications in…”
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    Journal Article
  19. 19

    Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films by Park, Min Hyuk, Kim, Han Joon, Kim, Yu Jin, Lee, Young Hwan, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Fengler, Franz, Schroeder, Uwe, Hwang, Cheol Seong

    Published in ACS applied materials & interfaces (22-06-2016)
    “…In this study, the changes in the structural and electrical properties of ferroelectric Hf1-xZrxO2 films with various Zr contents (0.26-0.70) were…”
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    Journal Article
  20. 20

    Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide by Schenk, Tony, Schroeder, Uwe, Pešić, Milan, Popovici, Mihaela, Pershin, Yuriy V, Mikolajick, Thomas

    Published in ACS applied materials & interfaces (26-11-2014)
    “…HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting…”
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    Journal Article