Search Results - "SCHLIWA, A"

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    Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots by SEGUIN, R, SCHLIWA, A, RODT, S, PÖTSCHKE, K, POHL, U. W, BIMBERG, D

    Published in Physical review letters (16-12-2005)
    “…A systematic variation of the exciton fine-structure splitting with quantum dot size in single quantum dots grown by metal-organic chemical vapor deposition is…”
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    Journal Article
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    Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots by Nowozin, T., Marent, A., Bonato, L., Schliwa, A., Bimberg, D., Smakman, E. P., Garleff, J. K., Koenraad, P. M., Young, R. J., Hayne, M.

    “…We present structural, electrical, and theoretical investigations of self-assembled type-II GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using…”
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    Journal Article
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    Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers by Arsenijević, D., Schliwa, A., Schmeckebier, H., Stubenrauch, M., Spiegelberg, M., Bimberg, D., Mikhelashvili, V., Eisenstein, G.

    Published in Applied physics letters (05-05-2014)
    “…The dynamic properties of ground- and excited-state emission in InAs/GaAs quantum-dot lasers operating close to 1.31 μm are studied systematically. Under low…”
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    Journal Article
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    Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built-in dipole moments by Kindel, C., Callsen, G., Kako, S., Kawano, T., Oishi, H., Hönig, G., Schliwa, A., Hoffmann, A., Arakawa, Y.

    “…We present a study about the origin of the huge emission linewidths broadening commonly observed for wurtzite GaN/AlN quantum dots. Our analysis is based on a…”
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    Journal Article
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    Indirect and direct optical transitions in In0.5Ga0.5As/GaP quantum dots by Stracke, G., Sala, E. M., Selve, S., Niermann, T., Schliwa, A., Strittmatter, A., Bimberg, D.

    Published in Applied physics letters (24-03-2014)
    “…We present a study of self-assembled In0.5Ga0.5As quantum dots on GaP(001) surfaces linking growth parameters with structural, optical, and electronic…”
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    Journal Article
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    Hierarchical self-assembly of GaAs/AlGaAs quantum dots by Rastelli, A, Stufler, S, Schliwa, A, Songmuang, R, Manzano, C, Costantini, G, Kern, K, Zrenner, A, Bimberg, D, Schmidt, O G

    Published in Physical review letters (23-04-2004)
    “…A novel structure containing self-assembled, unstrained GaAs quantum dots is obtained by combining solid-source molecular beam epitaxy and atomic-layer precise…”
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    Journal Article
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    Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer by Stracke, G., Glacki, A., Nowozin, T., Bonato, L., Rodt, S., Prohl, C., Lenz, A., Eisele, H., Schliwa, A., Strittmatter, A., Pohl, U. W., Bimberg, D.

    Published in Applied physics letters (26-11-2012)
    “…Coherent In0.25Ga0.75As quantum dots (QDs) are realized on GaP(001) substrates by metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a…”
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    Journal Article
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    Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕GaAs quantum dots by Seguin, R., Schliwa, A., Germann, T. D., Rodt, S., Pötschke, K., Strittmatter, A., Pohl, U. W., Bimberg, D., Winkelnkemper, M., Hammerschmidt, T., Kratzer, P.

    Published in Applied physics letters (25-12-2006)
    “…A systematic study of the impact of annealing on the electronic properties of single InAs∕GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence…”
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    Journal Article
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    Quantum Dots for Single- and Entangled-Photon Emitters by Bimberg, D., Stock, E., Lochmann, A., Schliwa, A., Tofflinger, J.A., Unrau, W., Munnix, M., Rodt, S., Haisler, V.A., Toropov, A.I., Bakarov, A., Kalagin, A.K.

    Published in IEEE photonics journal (01-06-2009)
    “…The efficient generation of polarized single or entangled photons is a crucial requirement for the implementation of quantum key distribution (QKD) systems…”
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    Journal Article
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    Electron localization by self-assembled GaSb/GaAs quantum dots by Hayne, M., Maes, J., Bersier, S., Moshchalkov, V. V., Schliwa, A., Müller-Kirsch, L., Kapteyn, C., Heitz, R., Bimberg, D.

    Published in Applied physics letters (16-06-2003)
    “…We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser…”
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    Journal Article
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    Many-particle effects in type II quantum dots by Müller-Kirsch, L., Heitz, R., Schliwa, A., Stier, O., Bimberg, D., Kirmse, H., Neumann, W.

    Published in Applied physics letters (05-03-2001)
    “…Many-particle effects are investigated in the photoluminescence of type II GaSb/GaAs quantum dots (QDs). With increasing excitation density, i.e., exciton…”
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    Journal Article
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    Excitonic states in GaAs quantum dots fabricated by local droplet etching by Graf, A., Sonnenberg, D., Paulava, V., Schliwa, A., Heyn, Ch, Hansen, W.

    “…The influence of dot size and shape on the excitonic structure of GaAs/AlGaAs quantum dots (QDs) is studied experimentally and theoretically. Almost…”
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    Journal Article
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    Optimization of UV LED design using evolutionary algorithms by Leguay, L., Maczko, H., Schliwa, A., Birner, S.

    Published in 2023 IEEE Photonics Conference (IPC) (12-11-2023)
    “…We present a computational approach combining evolutionary algorithms with calculation software nextnano++ to optimize the design of a nitride-based…”
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    Conference Proceeding
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    Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots by Seguin, R., Rodt, S., Schliwa, A., Pötschke, K., Pohl, U. W., Bimberg, D.

    Published in Physica Status Solidi (b) (01-12-2006)
    “…A comprehensive study of the exchange interaction between charge carriers in self‐organized InAs/GaAs quantum dots is presented. Single quantum‐dot…”
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    Journal Article Conference Proceeding
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