Search Results - "SCHLEY, Peter"

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  1. 1
    High performance SiGe:C HBTs using atomic layer base doping

    High performance SiGe:C HBTs using atomic layer base doping by Tillack, Bernd, Yamamoto, Yuji, Knoll, Dieter, Heinemann, Bernd, Schley, Peter, Senapati, Biswanath, Krüger, Dietmar

    Published in Applied surface science (15-03-2004)
    “…We applied atomic layer processing for base doping of high performance SiGe:C heterojunction bipolar transistors (HBTs) fabricated within a 0.25 μm BiCMOS…”
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  2. 2
    Accurate (p, ρ, T, x) Measurements of Hydrogen-Enriched Natural-Gas Mixtures at T = (273.15, 283.15, and 293.15) K with Pressures up to 8 MPa

    Accurate (p, ρ, T, x) Measurements of Hydrogen-Enriched Natural-Gas Mixtures at T = (273.15, 283.15, and 293.15) K with Pressures up to 8 MPa by Richter, Markus, Ben Souissi, Mohamed A, Span, Roland, Schley, Peter

    Published in Journal of chemical and engineering data (12-06-2014)
    “…Accurate (p, ρ, T, x) measurements of three hydrogen-enriched natural-gas mixtures were carried out at T = (273.15, 283.15, and 293.15) K with pressures up to…”
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  3. 3
    Metrological issues in energy measurement on biogas

    Metrological issues in energy measurement on biogas by Hoppe, Manfred, Schley, Peter, Uhrig, Martin

    Published in Accreditation and quality assurance (01-12-2009)
    “…The use of biogas as regenerative energy can be achieved more efficiently by injecting the treated biogas into natural gas grids since the localisation of the…”
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  4. 4
    A Two-Sinker Densimeter for Accurate Measurements of the Density of Natural Gases at Standard Conditions

    A Two-Sinker Densimeter for Accurate Measurements of the Density of Natural Gases at Standard Conditions by Richter, Markus, Kleinrahm, Reiner, Glos, Stefan, Wagner, Wolfgang, Span, Roland, Schley, Peter, Uhrig, Martin

    Published in International journal of thermophysics (01-05-2010)
    “…A special reference densimeter has been developed for accurate measurements of densities of natural gases and multicomponent gas mixtures at standard…”
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  5. 5
    A modular, low-cost SiGe:C BiCMOS process featuring high-fTand high-BVCEO transistors

    A modular, low-cost SiGe:C BiCMOS process featuring high-fTand high-BVCEO transistors by KNOLL, Dieter, HEINEMANN, Bernd, HAAK, Ulrich, HÖPPNER, Wolfgang, KORNDÖRFER, Falk, KUCK, Beate, MARSCHMEYER, Steffen, RICHTER, Harald, RÜCKER, Holger, SCHLEY, Peter, SCHMIDT, Detlef, SCHOLZ, Rene, BARTH, Rainer, SENAPATI, Biswanath, TILLACK, Bernd, WINKLER, Wolfgang, WOLANSKY, Dirk, WOLF, Christoph, WULF, Hans-Erich, YAMAMOTO, Yuji, ZAUMSEIL, Peter, BLUM, Katrin, BORNGRÄBER, Johannes, DREWS, Jürgen, EHWALD, Karl-Emst, FISCHER, Gerhard, FOX, Alexander, GRABOLLA, Thomas

    Published 2004
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