Search Results - "SCHIRBER, J. E"

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    Organic Superconductors-New Benchmarks by Williams, Jack M., Schultz, Arthur J., Geiser, Urs, Carlson, K. Douglas, Kini, Aravinda M., Wang, H. Hau, Kwok, Wai-Kwong, Whangbo, Myung-Hwan, Schirber, James E.

    “…Recent advances in the design and synthesis of organic synthetic metals have yielded materials that have the highest superconducting transition temperatures…”
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    p-channel strained quantum well, field-effect transistor by DRUMMOND, T. J, ZIPPERIAN, T. E, FRITZ, I. J, SCHIRBER, J. E, PLUT, T. A

    Published in Applied physics letters (25-08-1986)
    “…A p-channel field-effect transistor with a 3.5 μm Cr/Au gate was fabricated from a modulation-doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well-behaved…”
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    Light-hole conduction in InGaAs/GaAs strained-layer superlattices by SCHIRBER, J. E, FRITZ, I. J, DAWSON, L. R

    Published in Applied physics letters (15-01-1985)
    “…We report the first observation of light-hole band carriers in In0.2Ga0.8As/GaAs strained-layer superlattices by direct measurements of their effective mass…”
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    Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices by FRITZ, I. J, GOURLEY, P. L, DAWSON, L. R, SCHIRBER, J. E

    Published in Applied physics letters (19-09-1988)
    “…We report electrical transport and optical studies of the efficiency with which an In0.2Ga0.8As/GaAs strained-layer superlattice (SLS) can filter threading…”
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    Spin-density-wave transitions in a magnetic field by KWAK, J. F, SCHIRBER, J. E, CHAIKIN, P. M, WILLIAMS, J. M, WANG, H.-H, CHIANG, L. Y

    Published in Physical review letters (03-03-1986)
    “…New Hall measurements on (TMTSF)2PF6 under pressure are reported. The data, and a simple model, directly link the novel magnetic-field-induced state first seen…”
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    Electrical transport of holes in GaAS/InGaAs/GaAs single strained quantum wells by FRITZ, I. J, DRUMMOND, T. J, OSBOURN, G. C, SCHIRBER, J. E, JONES, E. D

    Published in Applied physics letters (16-06-1986)
    “…We report electrical transport data for holes in single strained quantum well structures of the type GaAs/InxGa1−xAs/GaAs with x≊0.2. With modulation doping, 4…”
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    Large valence-band nonparabolicity and tailorable hole masses in strained-layer superlattices by OSBOURN, G. C, SCHIRBER, J. E, DRUMMOND, T. J, DAWSON, L. R, DOYLE, B. L, FRITZ, I. J

    Published in Applied physics letters (22-09-1986)
    “…The two-dimensional, strain-induced light-hole masses in InGaAs strained-layer superlattices are shown to have large nonparabolicity contributions. Calculated…”
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    Determination of energy-band dispersion curves in strained-layer structures by JONES, E. D, LYO, S. K, FRITZ, I. J, KLEM, J. F, SCHIRBER, J. E, TIGGES, C. P, DRUMMOND, T. J

    Published in Applied physics letters (29-05-1989)
    “…Simultaneous measurement of both the conduction- and valence-band dispersion curves in single strained-layer structures is presented. These measurements rely…”
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    Strained quantum well modulation-doped InGaSb/AlGaSb structures grown by molecular beam epitaxy by KLEM, J. F, LOTT, J. A, SCHIRBER, J. E, KURTZ, S. R, LIN, S. Y

    Published in Journal of electronic materials (01-03-1993)
    “…Strained single quantum well InGaSb/AlGaSb structures for field-effect transistor applications have been grown by molecular beam epitaxy. Modulation-doped…”
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    High pressure-high temperature gaseous oxygen system for processing oxide superconductor materials by SCHIRBER, J. E, OVERMYER, D. L, CIESLAK, M. J

    Published in Japanese Journal of Applied Physics (01-06-1988)
    “…We describe a high pressure-high temperature gaseous oxygen system which is proving useful in controlling oxygen content in a variety of high density copper…”
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    Electronic structure of the gold/Bi2Sr2CaCu2O8 and gold/EuBa2Cu3O7-δ interfaces as studied by photoemission spectroscopy by DESSAU, D. S, SHEN, Z.-X, KAPITULNIK, A, SCHIRBER, J. E, WELLS, B. O, SPICER, W. E, LIST, R. S, ARKO, A. J, BARLETT, R. J, FISK, Z, CHEONG, S.-W, MITZI, D. B

    Published in Applied physics letters (16-07-1990)
    “…High-resolution photoemission has been used to probe the electronic structure of the gold/Bi2Sr2CaCu2O8 and gold/EuBa2Cu3O7−δ interface formed by a…”
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    Hall-effect measurements in p-type InGaAs/GaAs strained-layer superlattices by FRITZ, I. J, DAWSON, L. R, DRUMMOND, T. J, SCHIRBER, J. E, BIEFELD, R. M

    Published in Applied physics letters (13-01-1986)
    “…We report, for the first time, temperature-dependent Hall data for holes in modulation-doped In0.2Ga0.8As/GaAs strained-layer superlattices. Samples with…”
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    Influence of built-in strain on hall effect in InGaAs/GaAs quantum well structures with p-type modulation doping by FRITZ, I. J, DOYLE, B. L, SCHIRBER, J. E, JONES, E. D, DAWSON, L. R, DRUMMOND, T. J

    Published in Applied physics letters (08-09-1986)
    “…Hall-effect data between 4 and 300 K on p-type strained quantum well structures in the InGaAs alloy system show pronounced effects due to the strain-induced…”
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