Search Results - "SALOMON, Damien"
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ID16B: a hard X-ray nanoprobe beamline at the ESRF for nano-analysis
Published in Journal of synchrotron radiation (01-01-2016)“…Within the framework of the ESRF Phase I Upgrade Programme, a new state‐of‐the‐art synchrotron beamline ID16B has been recently developed for hard X‐ray…”
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The nanoscale distribution of copper and its influence on charge collection in CdTe solar cells
Published in Nano energy (01-01-2022)“…For decades, Cu has been the primary dopant in CdTe photovoltaic absorbers. Typically, Cu acceptor concentrations in these devices are on the order of 1 × 1014…”
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Facilely synthesized nitrogen-doped reduced graphene oxide functionalized with copper ions as electrocatalyst for oxygen reduction
Published in NPJ 2D materials and applications (04-01-2021)“…Nitrogen-doped reduced graphene oxide is successfully synthesized and functionalized with hydroxylated copper ions via one-pot microwave-assisted route. The…”
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In operando x-ray imaging of nanoscale devices: Composition, valence, and internal electrical fields
Published in Science advances (01-12-2017)“…We introduce a method for directly imaging depletion layers in operando with elemental specificity and chemical speciation at sub-100 nm spatial resolution…”
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Nano-imaging of environmental dust in human lung tissue by soft and hard X-ray fluorescence microscopy
Published in Spectrochimica acta. Part B: Atomic spectroscopy (01-09-2018)“…It is well recognized that a large number of pulmonary diseases are induced by the effects of inhaled particulates. Anthracosis is defined as an asymptomatic,…”
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Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire
Published in Nano letters (24-11-2021)“…Time-resolved cathodoluminescence is a key tool with high temporal and spatial resolution. However, optical spectroscopic information can be also extracted…”
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M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
Published in Nano letters (09-11-2011)“…Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11̅00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on…”
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Nanobeam X‑ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires
Published in Nano letters (10-10-2018)“…The properties of semiconductors can be controlled using doping, making it essential for electronic and optoelectronic devices. However, with shrinking device…”
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Nanoscale mapping of carrier collection in single nanowire solar cells using X‐ray beam induced current
Published in Journal of synchrotron radiation (01-01-2019)“…Here it is demonstrated how nanofocused X‐ray beam induced current (XBIC) can be used to quantitatively map the spatially dependent carrier collection…”
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10
The nanoscale distribution of copper and its influence on charge collection in CdTe solar cells
Published in Nano energy (09-10-2021)“…For decades, Cu has been the primary dopant in CdTe photovoltaic absorbers. Typically, Cu acceptor concentrations in these devices are on the order of 1 1014…”
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Silane-Induced N‑Polarity in Wires Probed by a Synchrotron Nanobeam
Published in Nano letters (08-02-2017)“…Noncentrosymmetric one-dimensional structures are key driving forces behind advanced nanodevices. Owing to the critical role of silane injection in creating…”
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A helium mini‐cryostat for the nanoprobe beamline ID16B at ESRF: characteristics and performance
Published in Journal of synchrotron radiation (01-07-2020)“…A helium mini‐cryostat has been developed for the hard X‐ray nanoprobe ID16B of the European Synchrotron to collect X‐ray excited optical luminescence and…”
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Thin-Wall GaN/InAlN Multiple Quantum Well Tubes
Published in Nano letters (14-06-2017)“…Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metal–organic…”
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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
Published in Nanoscale research letters (07-02-2013)“…GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiN x layer formed…”
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M-Plane Core―Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices
Published in Nano letters (2011)Get full text
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