Search Results - "SADANA, Devendra K"

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  1. 1

    Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene by Kim, Jeehwan, Bayram, Can, Park, Hongsik, Cheng, Cheng-Wei, Dimitrakopoulos, Christos, Ott, John A., Reuter, Kathleen B., Bedell, Stephen W., Sadana, Devendra K.

    Published in Nature communications (11-09-2014)
    “…There are numerous studies on the growth of planar films on sp 2 -bonded two-dimensional (2D) layered materials. However, it has been challenging to grow…”
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  2. 2

    Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics by Cheng, Cheng-Wei, Shiu, Kuen-Ting, Li, Ning, Han, Shu-Jen, Shi, Leathen, Sadana, Devendra K.

    Published in Nature communications (12-03-2013)
    “…Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenide substrates and has been extensively explored to avoid the high…”
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  3. 3

    Efficient and bright organic light-emitting diodes on single-layer graphene electrodes by Li, Ning, Oida, Satoshi, Tulevski, George S., Han, Shu-Jen, Hannon, James B., Sadana, Devendra K., Chen, Tze-Chiang

    Published in Nature communications (12-08-2013)
    “…Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode…”
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  4. 4

    Layer-Resolved Graphene Transfer via Engineered Strain Layers by Kim, Jeehwan, Park, Hongsik, Hannon, James B., Bedell, Stephen W., Fogel, Keith, Sadana, Devendra K., Dimitrakopoulos, Christos

    “…The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled,…”
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  5. 5

    Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit by Kim, Jeehwan, Bedell, Stephen W., Sadana, Devendra K.

    Published in Applied physics letters (10-09-2012)
    “…Full activation of n-type dopant in germanium (Ge) reaching to its solid solubility has never been achieved by using ion implantation doping technique. This is…”
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  6. 6
  7. 7

    Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres by Kim, Jeehwan, Hong, Augustin J, Nah, Jae-Woong, Shin, Byungha, Ross, Frances M, Sadana, Devendra K

    Published in ACS nano (24-01-2012)
    “…We introduce a cost-effective method of forming size-tunable arrays of nanocones to act as a three-dimensional (3D) substrate for hydrogenated amorphous…”
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  8. 8

    High-efficiency heterojunction solar cells on crystalline germanium substrates by Hekmatshoar, Bahman, Shahrjerdi, Davood, Hopstaken, Marinus, Fogel, Keith, Sadana, Devendra K.

    Published in Applied physics letters (16-07-2012)
    “…We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9% and 7.2% on n-type and p-type crystalline germanium (c-Ge)…”
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  9. 9

    Diffusion-Controlled Porous Crystalline Silicon Lithium Metal Batteries by Collins, John, de Souza, Joel P., Hopstaken, Marinus, Ott, John A., Bedell, Stephen W., Sadana, Devendra K.

    Published in iScience (23-10-2020)
    “…Nanostructured porous silicon materials have recently advanced as hosts for Li-metal plating. However, limitations involve detrimental silicon…”
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  10. 10

    Monolithic III–V on Silicon Plasmonic Nanolaser Structure for Optical Interconnects by Li, Ning, Liu, Ke, Sorger, Volker J., Sadana, Devendra K.

    Published in Scientific reports (15-09-2015)
    “…Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We…”
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  11. 11

    Integrated Nanocavity Plasmon Light Sources for On-Chip Optical Interconnects by Liu, Ke, Li, Ning, Sadana, Devendra K, Sorger, Volker J

    Published in ACS photonics (17-02-2016)
    “…Next generation on-chip light sources require high modulation bandwidth, compact footprint, and efficient power consumption. Plasmon-based sources are able to…”
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  12. 12

    10.5% efficient polymer and amorphous silicon hybrid tandem photovoltaic cell by Kim, Jeehwan, Hong, Ziruo, Li, Gang, Song, Tze-bin, Chey, Jay, Lee, Yun Seog, You, Jingbi, Chen, Chun-Chao, Sadana, Devendra K., Yang, Yang

    Published in Nature communications (04-03-2015)
    “…Thin-film solar cells made with amorphous silicon (a-Si:H) or organic semiconductors are considered as promising renewable energy sources due to their low…”
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  13. 13

    Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus by Kim, Jeehwan, Bedell, Stephen W., Sadana, Devendra K.

    Published in Applied physics letters (21-02-2011)
    “…Obtaining heavily-doped n-type germanium (Ge) is difficult since n-type dopant activation in Ge is limited to less than 5×1019 cm−3 which is far below the…”
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  14. 14

    Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene by Bae, Sang-Hoon, Zhou, Xiaodong, Kim, Seyoung, Lee, Yun Seog, Cruz, Samuel S., Kim, Yunjo, Hannon, James B., Yang, Yang, Sadana, Devendra K., Ross, Frances M., Park, Hongsik, Kim, Jeehwan

    “…Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering…”
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  15. 15

    Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy by Bayram, Can, Ott, John A., Shiu, Kuen-Ting, Cheng, Cheng-Wei, Zhu, Yu, Kim, Jeehwan, Razeghi, Manijeh, Sadana, Devendra K.

    Published in Advanced functional materials (23-07-2014)
    “…A method of forming cubic phase (zinc blende) GaN (referred as c‐GaN) on a CMOS‐compatible on‐axis Si (100) substrate is reported. Conventional GaN materials…”
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  16. 16

    Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast by Mukherjee, Kunal, Wacaser, Brent A., Bedell, Stephen W., Sadana, Devendra K.

    Published in Applied physics letters (05-06-2017)
    “…Electron channeling contrast imaging (ECCI) is emerging as a technique for rapid and high-resolution characterization of individual crystalline defects in a…”
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  17. 17

    Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells by Hekmatshoar, Bahman, Shahrjerdi, Davood, Hopstaken, Marinus, Ott, John A., Sadana, Devendra K.

    Published in Applied physics letters (03-09-2012)
    “…We report silicon heterojunction solar cells with conversion efficiencies exceeding 21% using appropriately designed emitter structures comprised of highly…”
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  18. 18

    The Role of High Work-Function Metallic Nanodots on the Performance of a-Si:H Solar Cells: Offering Ohmic Contact to Light Trapping by Kim, Jeehwan, Abou-Kandil, Ahmed, Fogel, Keith, Hovel, Harold, Sadana, Devendra K

    Published in ACS nano (28-12-2010)
    “…Addition of carbon into p-type “window” layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages…”
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  19. 19

    Cracking behavior of evaporated amorphous silicon films by Kim, Jeehwan, Inns, Daniel, Sadana, Devendra K.

    Published in Thin solid films (30-06-2010)
    “…The residual stress in amorphous silicon films deposited by evaporation is investigated with different substrate temperatures. The stress measured from all the…”
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  20. 20

    A Four-FET Method for Extracting Mobility in FETs Without Field Oxide by Majumdar, Amlan, Ko-Tao Lee, Cheng-Wei Cheng, Kuen-Ting Shiu, Sadana, Devendra K., Leobandung, Effendi

    Published in IEEE transactions on electron devices (01-11-2014)
    “…Many fabricated III-V MOSFETs have electrically thin field oxide (FOX) that leads to parasitic currents and parasitic capacitances. When extracting…”
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