Search Results - "S. Yu. Karpov"

Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations by Durnev, M. V., Omelchenko, A. V., Yakovlev, E. V., Evstratov, I. Yu, Karpov, S. Yu

“…Strain effect on indium incorporation and optical transitions in bulk InGaN and GaN/InGaN/GaN quantum wells (QWs) coherently grown on GaN substrates with…”
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Myocardial injury associated with chronic hepatitis C: Clinical types and pathogenetic components by Strizhakov, L A, Karpov, S Yu, Fomin, V V, Lopatkina, T N, Tanashchuk, E L, Taranova, M V

“…Heart injury is one of the extrahepatic manifestations of chronic hepatitis C (CHC). The paper gives Russian and foreign authors' data on a relationship…”
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Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers by Bulashevich, K. A., Karpov, S. Yu, Suris, R. A.

“…We have derived an analytical approximation for the energy levels in a symmetric quantum well applicable in a wide range of the electric field variation…”
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Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops by Lobanova, A. V., Kolesnikova, A. L., Romanov, A. E., Karpov, S. Yu, Rudinsky, M. E., Yakovlev, E. V.

“…From the analysis of available experimental data, we suggest a mechanism of stress relaxation in strained (0001) InGaN/GaN layers, assuming formation of…”
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Carrier injection and light emission in visible and UV nitride LEDs by modeling by Karpov, S. Yu, Bulashevich, K. A., Zhmakin, I. A., Nestoklon, V. O., Mymrin, V. F., Makarov, Yu. N.

“…Polarization effects on carrier injection and light emission are considered by modeling with reference to single‐quantum‐well blue light emitting diode…”
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Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs by Chernyakov, A. E., Bulashevich, K. A., Karpov, S. Yu, Zakgeim, A. L.

“…Comprehensive analysis of current spreading, temperature distribution, and near‐field electroluminescence (EL) of high‐power flip‐chip InGaN/GaN light‐emitting…”
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Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency by Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Amano, H., Pearton, S. J., Lee, I.-H., Sun, Q., Han, J., Karpov, S. Yu

“…The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic…”
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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency by Karpov, S. Yu, Cherkashin, N. A., Lundin, W. V., Nikolaev, A. E., Sakharov, A. V., Sinitsin, M. A., Usov, S. O., Zavarin, E. E., Tsatsulnikov, A. F.

“…InGaN‐based monolithic multi‐color light emitting diodes (LEDs) are studied both experimentally and theoretically with the focus on factors controlling their…”
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Advances in modeling of wide-bandgap bulk crystal growth by Bogdanov, M. V., Demina, S. E., Karpov, S. Yu, Kulik, A. V., Ramm, M. S., Makarov, Yu. N.

“…We review key aspects of sublimation growth of wide‐bandgap semiconductors like SiC, AlN and GaN, and show how modeling can help to solve a number of practical…”
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effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis by Tsatsulnikov, A. F., Lundin, V. W., Zavarin, E. E., Yagovkina, M. A., Sakharov, A. V., Usov, S. O., Zemlyakov, V. E., Egorkin, V. I., Bulashevich, K. A., Karpov, S. Yu, Ustinov, V. M.

“…The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their…”
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Simulation of visible and ultra-violet group-III nitride light emitting diodes by Bulashevich, K.A., Mymrin, V.F., Karpov, S.Yu, Zhmakin, I.A., Zhmakin, A.I.

“…One-dimensional drift-diffusion model accounting for the unique properties of group-III nitrides is employed to simulate the carrier transport and…”
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Hybrid ZnO/III-nitride light-emitting diodes: modelling analysis of operation by Bulashevich, K. A., Evstratov, I. Yu, Karpov, S. Yu

“…Using simulations, we have analysed basic mechanisms of hybrid II–O/III–N light‐emitting diode operation. Factors largely affecting the internal quantum…”
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GaN evaporation in molecular-beam epitaxy environment by Grandjean, N., Massies, J., Semond, F., Karpov, S. Yu, Talalaev, R. A.

“…GaN(0001) thick layers were grown on c-plane sapphire substrates by molecular-beam epitaxy using NH3. The evaporation of such GaN layers in vacuum was studied…”
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Surface chemistry and transport effects in GaN hydride vapor phase epitaxy by Segal, A.S., Kondratyev, A.V., Karpov, S.Yu, Martin, D., Wagner, V., Ilegems, M.

“…A simple quasi-thermodynamic model of surface chemistry in GaN hydride vapor phase epitaxy (HVPE) is presented. The model is coupled with the detailed 3D…”
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Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight by Mymrin, V.F., Bulashevich, K.A., Podolskaya, N.I., Karpov, S.Yu

“…Native GaN and AlN substrates cut out of single-crystal boules provide threading dislocations in on-grown III-nitride materials with the density much lower…”
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Indium segregation kinetics in InGaAs ternary compounds by Karpov, S.Yu, Makarov, Yu.N

“…A rate equation model is applied to analyze surface segregation in InGaAs and related compounds during the growth of these materials by molecular beam epitaxy…”
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Modeling of facet formation in SiC bulk crystal growth by Matukov, I.D., Kalinin, D.S., Bogdanov, M.V., Karpov, S.Yu, Ofengeim, D.Kh, Ramm, M.S., Barash, J.S., Mokhov, E.N., Roenkov, A.D., Vodakov, Yu.A., Ramm, M.G., Helava, H., Makarov, Yu.N.

“…Control of the crystallization front profile is of great importance for various aspects of bulk SiC crystal growth by physical vapor transport. The structural…”
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Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface by Polyakov, A.Y., Nikolaev, V.I., Pechnikov, A.I., Yakimov, E.B., Karpov, S. Yu, Stepanov, S.I., Shchemerov, I.V., Vasilev, A.A., Chernykh, A.V., Kuznetsov, A., Lee, In-Hwan, Pearton, S.J.

“…Typically, semiconducting oxides and nitrides exhibit strong conductivity type asymmetries. In this work, we observed and interpreted the emergence of p-type…”
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Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling by Zakheim, D. A., Pavluchenko, A. S., Bauman, D. A., Bulashevich, K. A., Khokhlev, O. V., Karpov, S. Yu

“…In this paper, we report on the results of experimental and theoretical study of a promising way for suppression of the efficiency droop with current in…”
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Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity by Durnev, M. V., Omelchenko, A. V., Yakovlev, E. V., Evstratov, I. Yu, Karpov, S. Yu

“…Indium incorporation into strained InGaN coherently grown on a GaN substrate with arbitrary polarity is simulated using a simplified epitaxy model. The InGaN…”
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