Search Results - "S. V. Shvedau"

QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS by V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, V. A. Filipenya, S. V. Shvedau, V. V. Chernyi, V. Yu. Yavid, Yu. N. Yankouski

“…There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied…”
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Influence of electric field strength on electrochemical formation of macroporous silicon with ordered pore positions by Lazarouk, S. K., Dolbik, A. V., Turtsevich, A. S., Shvedau, S. V., Labunov, V. A.

“…Studying of electric field influence on macroporous silicon formation has been conducted. We have found that formation of the ordered macroporous structure…”
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Formation of low-temperature oxide inside of straight-through pores in silicon substrates for 3-D metal interconnections by Lazarouk, S. K., Dolbik, A. V., Turtsevich, A. S., Shvedau, S. V., Labunov, V. A.

“…Silicon substrates with ordered pores, which pass through the whole sample, have been fabricated for 3-D metal interconnections. The inter-pore distance can be…”
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Prospects of designing radiation-hard memory devices, made by OJSC "Integral" by Belous, A. I., Lozitsky, E. G., Turtsevich, A. S., Shvedau, S. V., Usov, G. I.

“…The characteristics are indicated of radiation-hard memory devices, made by OJSC "Integral" with consideration of the status and prospects of the news designs…”
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Formation of straight-through pores in silicon substrates for 3-D metal interconnections by Lazarouk, S. K., Dolbik, A. V., Stepanova, L. I., Bodryh, T. I., Turtsevich, A. S., Shvedau, S. V., Labunov, V. A.

“…Silicon substrates with ordered pores, which go through the whole sample, have been fabricated for 3-D metal interconnections. The inter-pore distance can be…”
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