Search Results - "S. Minsky, Milan"

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  1. 1

    Growth and properties of InGaN nanoscale islands on GaN by Keller, Stacia, Keller, Bernd P, S. Minsky, Milan, Bowers, John E, Mishra, Umesh K, DenBaars, Steven P, Seifert, Werner

    Published in Journal of crystal growth (01-06-1998)
    “…Strong photoluminescence and radiative recombination lifetimes longer than 1ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing…”
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    Journal Article
  2. 2

    Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers by Minsky, Milan S., Chichibu, Shigefusa, Fleischer, Siegfried B., Abare, Amber C., Bowers, John E., Hu, Evelyn L., Keller, Stacia, Mishra, Umesh K., DenBaars, Steven P.

    Published in Japanese Journal of Applied Physics (15-11-1998)
    “…Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and…”
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    Journal Article
  3. 3

    Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques by Chi-Kuang Sun, Keller, S., Tien-Lung Chiu, Wang, G., Minsky, M.S., Bowers, J.E., DenBaars, S.P.

    “…We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT),…”
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    Journal Article