Search Results - "S. Minsky, Milan"
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Growth and properties of InGaN nanoscale islands on GaN
Published in Journal of crystal growth (01-06-1998)“…Strong photoluminescence and radiative recombination lifetimes longer than 1ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing…”
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Journal Article -
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Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
Published in Japanese Journal of Applied Physics (15-11-1998)“…Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and…”
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3
Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques
Published in IEEE journal of selected topics in quantum electronics (01-06-1997)“…We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT),…”
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Journal Article