Search Results - "Süess, M. J."

Analysis of enhanced light emission from highly strained germanium microbridges by Süess, M. J., Geiger, R., Minamisawa, R. A., Schiefler, G., Frigerio, J., Chrastina, D., Isella, G., Spolenak, R., Faist, J., Sigg, H.

“…Tensile strain is a widely discussed means for inducing a direct bandgap in Ge for the realization of a semiconductor laser compatible with Si…”
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Power-Dependent Raman Analysis of Highly Strained Si Nanobridges by Süess, M. J, Minamisawa, R. A, Geiger, R, Bourdelle, K. K, Sigg, H, Spolenak, R

“…Strain analysis of complex three-dimensional nanobridges conducted via Raman spectroscopy requires careful experimentation and data analysis supported by…”
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Single-Mode Quantum Cascade Laser Array Emitting From a Single Facet by Suess, M. J., Jouy, P., Bonzon, C., Wolf, J. M., Gini, E., Beck, M., Faist, J.

“…We present an array of single-mode quantum cascade lasers operating in the range 8-9.5 μm. The resonator features a pair of distributed Bragg reflectors for…”
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On-chip dual-comb based on quantum cascade laser frequency combs by Villares, G., Wolf, J., Kazakov, D., Süess, M. J., Hugi, A., Beck, M., Faist, J.

“…Dual-comb spectroscopy is emerging as an appealing application of mid-infrared frequency combs for high-resolution molecular spectroscopy, as it leverages on…”
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Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5 by Minamisawa, R.A., Süess, M.J., Spolenak, R., Faist, J., David, C., Gobrecht, J., Bourdelle, K.K., Sigg, H.

“…Strained Si nanowires are among the most promising transistor structures for implementation in very large-scale integration due to of their superior…”
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Excess carrier lifetimes in Ge layers on Si by Geiger, R., Frigerio, J., Süess, M. J., Chrastina, D., Isella, G., Spolenak, R., Faist, J., Sigg, H.

“…The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy…”
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Minimization of amorphous layer in Ar+ ion milling for UHR-EM by Süess, M.J., Mueller, E., Wepf, R.

“…We present a comprehensive study on the influence of Ar+ ion milling parameters in the range of low acceleration voltages (0.5–6kV) and etching angles (3–10°)…”
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Room Temperature Operation of a Buried Heterostructure Photonic Crystal Quantum Cascade Laser by Peretti, R, Liverini, V, Wolf, J. M, Bonzon, C, Süess, M. J, Lourdudoss, S, Metaferia, W, Beck, M, Faist, J

“…High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure…”
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Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3 by Luong, G.V., Knoll, L., Blaeser, S., Süess, M.J., Sigg, H., Schäfer, A., Trellenkamp, S., Bourdelle, K.K., Buca, D., Zhao, Q.T., Mantl, S.

“…In this work we demonstrate the benefit of high uniaxial tensile strain on the performances of Si nanowire (NW) MOSFETs. High uniaxial tensile strained Si NWs…”
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Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser by Peretti, Romain, Liverini, Valeria, Süess, Martin J., Liang, Yong, Vigneron, Pierre- Baptiste, Wolf, Johanna M., Bonzon, Christopher, Bismuto, Alfredo, Metaferia, Wondwosen, Balaji, Manavaimaran, Lourdudoss, Sebastian, Gini, Emilio, Beck, Mattias, Faist, Jérome

“…High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure…”
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High on-currents with highly strained Si nanowire MOSFETs by Luong, G. V., Knoll, L., Süess, M. J., Sigg, H., Schäfer, A., Trellenkamp, S., Bourdelle, K. K., Buca, D., Zhao, Q. T., Mantl, S.

“…In this work we demonstrate the benefit of high uniaxial tensile strain on the performances of Si nanowire (NW) MOSFETs. High uniaxial tensile strained Si NWs…”
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Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth by Süess, M.J., Carroll, L., Sigg, H., Diaz, A., Chrastina, D., Isella, G., Müller, E., Spolenak, R.

“…We investigate tensile strained Ge/Si1−xGex (x=0.87) multiple quantum wells (MQW) on a Ge virtual substrate abruptly grown on Si for integration in CMOS…”
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Broadband monolithic extractor for terahertz quantum cascade laser based frequency combs by Rösch, M., Chelmus, C. Benea, Scalari, G., Bonzon, C., Süess, M. J., Beck, M., Faist, J.

“…We report on a monolithic extracting structure for terahertz quantum cascade laser based frequency combs. For a spectral bandwidth of more than 600 GHz at a…”
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Pulse generation and spectral optimization of broadband terahertz quantum cascade lasers by Bachmann, D., Rosch, M., Scalari, G., Suess, M. J., Beck, M., Faist, J., Unterrainer, K., Darmo, J.

“…By introducing side-absorbers to metal-metal waveguides of broadband terahertz quantum cascade lasers, we are able to control and completely suppress…”
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Enhanced light emission from Ge micro bridges uniaxially strained beyond 3 by Geiger, R., Suess, M. J., Minamisawa, R. A., Bonzon, C., Schiefler, G., Frigerio, J., Chrastina, D., Isella, G., Spolenak, R., Faiste, J., Sigg, H.

“…We present a stressor-free fabrication approach for creating 3.1% uniaxial tensile strain in Ge layers resulting in a 25× increase in PL intensity. 460 cm -1…”
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Excess carrier lifetimes in Ge layers on Si by Geiger, R., Frigerio, J., Suess, M. J., Minamisawa, R. A., Chrastina, D., Isella, G., Spolenak, R., Faist, J., Sigg, H.

“…Electron/hole lifetimes in thermally strained Ge layers on Si are deduced from time-resolved infrared pump-probe transmission spectroscopy. A doping scheme…”
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International collaboration on the health effects of nonionizing radiation by Suess, M J

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WHO programme on air quality and air pollution epidemiology by Suess, M J

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On the peculiar deformation mechanism of ion-induced texture rotation in thin films by Seita, Matteo, Sologubenko, Alla S., Fortuna, Franck, Süess, Martin J., Spolenak, Ralph

“…Ion-beam irradiation is conventionally used to tune the electronic properties of semiconductors or as a “surrogate” for the study of radiation damage…”
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Far-infrared quantum cascade lasers operating in AlAs phonon Reststrahlen band by Ohtani, K, Beck, M, Süess, M. J, Faist, J, Andrews, A. M, Zederbauer, T, Detz, H, Schrenk, W, Strasser, G

“…We report on the operation of a double metal waveguide far-infrared quantum cascade laser emitting at 28 $\mu$m, corresponding to the AlAs-like phonon…”
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