Search Results - "Ryu, Sang Ouk"

Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory by PARK, Il-Mok, JUNG, Jung-Kyu, RYU, Sang-Ouk, CHOI, Kyu-Jeong, YU, Byoung-Gon, PARK, Young-Bae, SEUNG MIN HAN, JOO, Young-Chang

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Sb-Se-based phase-change memory device with lower power and higher speed operations by Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Park, Y.-S., Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Wuttig, M.

“…A phase-change material of Sb/sub 65/Se/sub 35/ was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using…”
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The effect of antimony-doping on Ge2Sb2Te5, a phase change material by CHOI, Kyu-Jeong, YOON, Sung-Min, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon, RYU, Sang-Ouk

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Optical Transmittance Improvements of Al2O3/TiO2 Multilayer OLED Encapsulation Films Processed by Atomic Layer Deposition by Shin, Se-Un, Ryu, Sang Ouk

“…Encapsulation of organic light-emitting diodes (OLEDs) is the only way to prevent degradation due to the penetration of moisture and oxygen. However, the upper…”
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Polycrystalline silicon-germanium heating layer for phase-change memory applications by Lee, Seung-Yun, Choi, Kyu-Jeong, Ryu, Sang-Ouk, Yoon, Sung-Min, Lee, Nam-Yeal, Park, Young-Sam, Kim, Sang-Hoon, Lee, Sang-Heung, Yu, Byoung-Gon

“…This letter reports on the performance improvement of phase-change memory (PCM) cells by applying silicon-germanium (SiGe) alloys as resistive heating layers…”
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Dipole formation and electrical properties of high-k/SiO2 interface according to the density of SiO2 interfacial layer by Yun, Hye Won, Lee, Jinho, Kim, Ryun Na, Ji, Seung Hwan, Ryu, Sang Ouk, Kim, Woo-Byoung

“…The effect of SiO₂ buffer layers with various atomic densities on the interface dipole of high-k/SiO2 is confirmed. An ultrathin SiO₂ layer is formed on Si…”
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Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing by Ryu, Sang Ouk, Ha, Cheul Ho, Jun, Ho Young, Ryu, Si Ok

“…In this study, inkjet-printed zinc tin oxide:Cl (ZTO:Cl) thin films were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and all the…”
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Optical and electrical properties of transparent conducting gallium-doped ZnO electrodes prepared by atomic layer deposition for application in organic solar cells by Song, Yoon Seog, Seong, Nak Jin, Choi, Kyu Jeong, Ryu, Sang Ouk

“…Transparent and conducting gallium-doped ZnO electrodes were fabricated by means of atomic layer deposition. The electrode showed the lowest resistivity of…”
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Effect of the microstructural characteristics of a Ga-doped TiO2 hole block layer on an inverted structure organic solar cell by Lee, Eun Ju, Ryu, Sang Ouk

“…Inverted-structure organic solar cells (OSCs) were fabricated using atomic-layer-deposition (ALD) processed Ga-doped TiO 2 as hole blocking layer (HBL)…”
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Deposition and Characterization of CIGS Thin Films Deposited by Chemical Spray Process by Zhang, Yujie, Jun, Hoyoung, Park, Jae Young, Park, Seon Young, Ouk Ryu, Sang, Ryu, Si Ok

“…CuIn 0.7 Ga 0.3 Se 2 (CIGS) thin films were successfully deposited by chemical spray method under air environment and then the as-deposited films were annealed…”
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0.34 \text} AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal by Lee, Hyun-Soo, Jung, Dong Yun, Park, Youngrak, Jang, Hyun-Gyu, Lee, Hyoung-Seok, Jun, Chi-Hoon, Park, Junbo, Ryu, Sang-Ouk, Ko, Sang Choon, Nam, Eun Soo

“…A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of…”
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Characterization of Ge22Sb22Te56 and Sb-Excess Ge15Sb47Te38 Chalcogenide Thin Films for Phase-Change Memory Applications by Ryu, Sang-Ouk

“…A phase-change memory device that utilizes an antimony (Sb)-excess Ge 15 Sb 47 Te 38 chalcogenide thin film was fabricated and its electrical properties were…”
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SrTa2O6 THIN FILMS DEPOSITED BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION by Lee, W-J, You, I-K, Ryu, S-O, Yu, B-G, Cho, K-I, Yoon, S-G

“…SrTa2O6 (STO) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) with an alternating supply of reactant sources,…”
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New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition by Chae, Byung-Gyu, Lee, Won-Jae, You, In-Kyu, Ryu, Sang-Ouk, Jung, Moon-Youn, Yu, Byoung-Gon

“…Authors report on the electrical characterization of SrTa2O6 (STA) films as alternative gate dielectrics deposited directly on Si by plasma-enhanced atomic…”
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Improving light efficiency of white polymer light emitting diodes by introducing the TPBi exciton protection layer by Shin, Sang Baie, Gong, Su Choel, Lee, Hak Min, Jang, Ji Geun, Gong, Myoung Seon, Ryu, Sang Ouk, Lee, Jun Yeop, Chang, Young Chul, Chang, Ho Jung

“…We fabricated and evaluated the efficient white polymer light emitting diode (WPLED) by introducing TPBi exciton protection layer with…”
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Effects of oxygen concentration on the electrical properties of ZnO films by Kim, Hong Seung, Jung, Eun Soo, Lee, Won-Jae, Kim, Jin Hyeok, Ryu, Sang-Ouk, Choi, Sung-Yool

“…In this paper, electrical characteristics by various oxygen content in ZnO films were studied. To control the oxygen content of ZnO films, post-thermal…”
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MATERIAL DESIGN SCHEMES FOR SINGLE-TRANSISTOR-TYPE FERROELECTRIC MEMORY CELLS USING Pt/(Bi,La)4Ti3O12/ONO/Si STRUCTURES by N-Y, Lee, S-M, Yoon, I-K, You, S-O, Ryu, S-M, Cho, W-C, Shin, K-J, Choi

“…Authors fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures using Bi3.465La0.85Ti3O12 (BLT) ferroelectric thin films and SiO2/Si3N4/SiO2…”
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Microstructure and Electrical Properties of BLT Films by Chemical Solution Deposition by Liu, Guoxia, Lee 1, Won-Jae, Lee 1, Geun-Hyoung, Kim 1, Il-Soo, Shin 1, Byoung-Chul, Lee 2, Nam-Yeal, Ryu 2, Sang-Ouk, Shin 2, Woong-Chul

“…The phase formation and electrical properties of (Bi,La) 4 Ti 3 O 12 (BLT) thin film prepared by the chemical solution deposition method on Pt/TiO 2 /SiO 2 /Si…”
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Etching Mechanism of Ferroelectric Film Etched by Helicon Plasma Method by You, In-Kyu, Yoon, Sung-Min, Cho, Seong Mok, Kim, Kwi Dong, Ryu, Sang-Ouk, Lee, Nam Yeal, Yu, Byoung-Gon, Koo, Jin Gun, Kim, Jong Dae

“…The etching behavior and properties of SBT (SrBi 2 Ta 2 O 9 ) thin films were investigated by varying the etching parameter such as gas mixing ratio in helicon…”
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Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories by Lee, Seung-Yun, Yoon, Sung-Min, Choi, Kyu-Jeong, Lee, Nam-Yeal, Park, Young-Sam, Ryu, Sang-Ouk, Yu, Byoung-Gon, Kim, Sang-Hoon, Lee, Sang-Heung

“…The effect of the electrical resistivity of a silicon–germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the…”
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