Search Results - "Ryu, Jin Joo"

Self-rectifying resistive memory in passive crossbar arrays by Jeon, Kanghyeok, Kim, Jeeson, Ryu, Jin Joo, Yoo, Seung-Jong, Song, Choongseok, Yang, Min Kyu, Jeong, Doo Seok, Kim, Gun Hwan

“…Conventional computing architectures are poor suited to the unique workload demands of deep learning, which has led to a surge in interest in memory-centric…”
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Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators by Jeon, Kanghyeok, Ryu, Jin Joo, Im, Seongil, Seo, Hyun Kyu, Eom, Taeyong, Ju, Hyunsu, Yang, Min Kyu, Jeong, Doo Seok, Kim, Gun Hwan

“…Memristor-integrated passive crossbar arrays (CAs) could potentially accelerate neural network (NN) computations, but studies on these devices are limited to…”
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Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device by Seo, Hyun Kyu, Ryu, Jin Joo, Lee, Su Yeon, Jeon, Kanghyoek, Sohn, Hyunchul, Kim, Gun Hwan, Yang, Min Kyu

“…The immense increase of unstructured data require novel computing systems that can process the input data with low power and parallel processing. This…”
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Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device by Ryu, Jin Joo, Park, Bo Keun, Chung, Taek‐Mo, Lee, Young Kuk, Kim, Gun Hwan

“…Here, an optimized method for energy‐efficient and highly reliable multibit operation in a Au/Al2O3/HfO2/TiN resistive switching (RS) device is investigated. A…”
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Optimized chalcogenide medium for inherently activated resistive switching device by Ryu, Jin Joo, Jeon, Kanghyeok, Eom, Taeyong, Yang, Min Kyu, Sohn, Hyunchul, Kim, Gun Hwan

“…[Display omitted] •The GeTex-based resistive switching device shows forming-free, uniform operating distribution, and stable retention.•The mechanism of…”
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Al concentration-dependent electrical modulation of Al-doped ZnO thin film using atomic layer deposition by Choi, Ji Woon, Ryu, Jin Joo, Song, Wooseok, Kim, Gun Hwan, Chung, Taek-Mo

“…A series of 150-nm-thick Al-doped ZnO (AZO) thin films with various Al doping concentrations were deposited by atomic layer deposition technique to determine…”
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Ag-dispersive chalcogenide media for readily activated electronic memristor by Lee, Su Yeon, Ryu, Jin Joo, Seo, Hyun Kyu, Sohn, Hyunchul, Kim, Gun Hwan, Yang, Min Kyu

“…“The memristive device of the electro-forming free and initial “ON-state” is introduced using a Ag-dispersed chalcogenide Ge2Se3Te5 thin film. Unlike…”
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Direct Growth of Bi2SeO5 Thin Films for High‑k Dielectrics via Atomic Layer Deposition by Park, Hyeonbin, Hwang, Jae Hun, Oh, Seung Hoon, Ryu, Jin Joo, Jeon, Kanghyeok, Kang, Minsoo, Chai, Hyun-Jun, Ham, Ayoung, Kim, Gun Hwan, Kang, Kibum, Eom, Taeyong

“…This study describes a modified atomic layer deposition (ALD) process for fabricating BiO x Se y thin films, targeting their application as high-k dielectrics…”
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Direct Growth of Bi 2 SeO 5 Thin Films for High-k Dielectrics via Atomic Layer Deposition by Park, Hyeonbin, Hwang, Jae Hun, Oh, Seung Hoon, Ryu, Jin Joo, Jeon, Kanghyeok, Kang, Minsoo, Chai, Hyun-Jun, Ham, Ayoung, Kim, Gun Hwan, Kang, Kibum, Eom, Taeyong

“…This study describes a modified atomic layer deposition (ALD) process for fabricating BiO Se thin films, targeting their application as high-k dielectrics in…”
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Fully “Erase-free” Multi-Bit Operation in HfO2‑Based Resistive Switching Device by Ryu, Jin Joo, Jeon, Kanghyeok, Yeo, Seungmin, Lee, Geonhee, Kim, Chunjoong, Kim, Gun Hwan

“…Fully “Erase-free” multi-bit operation was demonstrated in a W/HfO2/TiN-stacked resistive switching device. The term Erase-free means that a digital state in a…”
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Fully "Erase-free" Multi-Bit Operation in HfO 2 -Based Resistive Switching Device by Ryu, Jin Joo, Jeon, Kanghyeok, Yeo, Seungmin, Lee, Geonhee, Kim, Chunjoong, Kim, Gun Hwan

“…Fully "Erase-free" multi-bit operation was demonstrated in a W/HfO /TiN-stacked resistive switching device. The term Erase-free means that a digital state in a…”
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Dot‐Product Operation in Crossbar Array Using a Self‐Rectifying Resistive Device by Jeon, Kanghyeok, Ryu, Jin Joo, Jeong, Doo Seok, Kim, Gun Hwan

“…Reducing computational complexity is essential in future computing systems for processing a large amount of unstructured data simultaneously. Dot‐product…”
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Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode by Yang, Kun, Kim, Gi-Yeop, Ryu, Jin Joo, Lee, Dong Hyun, Park, Ju Yong, Kim, Se Hyun, Park, Geun Hyeong, Yu, Geun Taek, Kim, Gun Hwan, Choi, Si Young, Park, Min Hyuk

“…The ferroelectricity of Hf0.5Zr0.5O2 thin films makes them good candidate materials for current and future electronic devices. To maximize the remanent…”
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Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability by Yoo, Seung-Jong, Agbenyeke, Raphael Edem, Choi, Heenang, Jeon, Kanghyeok, Ryu, Jin Joo, Eom, Taeyong, Park, Bo Keun, Chung, Taek-Mo, Jeong, Doo Seok, Song, Wooseok, Kim, Gun Hwan

“…[Display omitted] •SnS2 thin film of the 2-dimensional structure was incorporated in two ways to the TiO2 resistive switching layer.•The significant…”
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Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device (Adv. Electron. Mater. 8/2023) by Seo, Hyun Kyu, Ryu, Jin Joo, Lee, Su Yeon, Jeon, Kanghyoek, Sohn, Hyunchul, Kim, Gun Hwan, Yang, Min Kyu

“…Self‐Rectifying Resistive Memory In article number 2300165, Gun Hwan Kim, Min Kyu Yang and co‐workers fabricate a resistive memory device based on Si:ZrOx with…”
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Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries by Ryu, Jin Joo, Jeon, Kanghyeok, Kim, Guhyun, Yang, Min Kyu, Kim, Chunjoong, Jeong, Doo Seok, Kim, Gun Hwan

“…In this study, highly reliable and accurate weight‐modification behaviors are realized using a W/Al2O3 (3 nm)/HfO2 (7 nm)/TiN memristive device. The accuracy…”
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Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance by Seo, Hyun Kyu, Ryu, Jin Joo, Lee, Su Yeon, Park, Minsoo, Park, Seong‐Geon, Song, Wooseok, Kim, Gun Hwan, Yang, Min Kyu

“…As a selection device for highly integrated crossbar‐type data storage, the chalcogenide‐based ovonic threshold switch (OTS) shows high selectivity, fast…”
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Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance (Adv. Electron. Mater. 9/2022) by Seo, Hyun Kyu, Ryu, Jin Joo, Lee, Su Yeon, Park, Minsoo, Park, Seong‐Geon, Song, Wooseok, Kim, Gun Hwan, Yang, Min Kyu

“…OTS Selection Devices Min Kyu Yang, Gun Hwan Kim and co‐workers, in article number 2200161, successfully demonstrate a GeSeTe ovonic threshold switch (OTS)…”
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Highly Linear and Symmetric Weight Modification in HfO 2 ‐Based Memristive Devices for High‐Precision Weight Entries by Ryu, Jin Joo, Jeon, Kanghyeok, Kim, Guhyun, Yang, Min Kyu, Kim, Chunjoong, Jeong, Doo Seok, Kim, Gun Hwan

“…In this study, highly reliable and accurate weight‐modification behaviors are realized using a W/Al 2 O 3 (3 nm)/HfO 2 (7 nm)/TiN memristive device. The…”
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Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO 2 ‐Based Resistive Switching Device by Ryu, Jin Joo, Park, Bo Keun, Chung, Taek‐Mo, Lee, Young Kuk, Kim, Gun Hwan

“…Here, an optimized method for energy‐efficient and highly reliable multibit operation in a Au/Al 2 O 3 /HfO 2 /TiN resistive switching (RS) device is…”
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