Search Results - "Rynders, L."

Three-Layer BEOL Process Integration with Supervia and Self-Aligned-Block Options for the 3 nm Node by Vega-Gonzalez, V., Bekaert, J., Kesters, E., Le, Q. T., Lorant, C., Varela P., O., Teugels, L., Heylen, N., El-Mekki, Z., van der Veen, M., Webers, T., Wilson, C. J., Vats, H., Rynders, L., Cupak, M., Uk-Lee, J., Drissi, Y., Halipre, L., Charley, A.-L., Verdonck, P., Witters, T., Gompel, S. V., Briggs, B., Kimura, Y., Jourdan, N., Ciofi, I., Gupta, A., Contino, A., Boccardi, G., Lariviere, S., Dupas, L., De-Wachter, B., Vancoille, E., Decoster, S., Lazzarino, F., Ercken, M, Debacker, P., Kim, R., Trivkovic, D., Croes, K., Leray, P., Dillemans, L., Chen, Y.-F., Tokei, Z., Versluijs, J., Lesniewska, A., Paolillo, S., Baert, R., Puliyalil, H.

“…The integration of a three-layer BEOL process which includes an intermediate 21 nm pitch level, relevant for the 3 nm technology node, is demonstrated. A full…”
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Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations by Vega-Gonzalez, V., Montero, D., Versluijs, J., Pedreira, O. Varela, Jourdan, N., Puliyalil, H., Chehab, B., Peissker, T., Haider, A., Batuk, D., Martinez, G. T., Geypen, J., Le, Q. T., Bazzazian, N., Heylen, N., van der Veen, M., El-Mekki, Z., Webers, T., Vats, H., Rynders, L., Cupak, M., Uk-Lee, J., Drissi, Y., Halipre, L., Gillijns, W., Charley, A.-L., Verdonck, P., Witters, T., Gompel, S. V., Kimura, Y., Ciofi, I., De Wachter, B., Swerts, J., Grieten, E., Ercken, M., Kim, R., Croes, K., Leray, P., Jaysankar, M., Nagesh, N., Ramakers, L., Murdoch, G., Park, S., Tokei, Z., Dentoni-Litta, E., Horiguchi, N.

“…The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CD bottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison…”
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Supervia Process Integration and Reliability Compared to Stacked Vias Using Barrierless Ruthenium by Vega-Gonzalez, V., Puliyalil, H., Versluijs, J., Lesniewska, A., Varela-Pereira, O., Baert, R., Paolillo, S., Decoster, S., Schleicher, F., Montero, D., Bekaert, J., Kesters, E., Le, Q. T., Lorant, C., Teugels, L., Heylen, N., Jourdan, N., El-Mekki, Z., van der Veen, M., Ciofi, I., Briggs, B., Heijlen, J., Dupas, L., De-Wachter, B., Vancoille, E., Webers, T., Vats, H., Rynders, L., Cupak, M., Uk-Lee, J., Drissi, Y., Halipre, L., Charley, A.-L., Verdonck, P., Witters, T., Gompel, S. V., Kimura, Y., Demonie, I., Lazzarino, F., Ercken, M, Kim, R., Trivkovic, D., Croes, K., Leray, P., Jaysankar, M., Wilson, C., Muroch, G., Tokei, Z.

“…The integration of high-aspect-ratio (AR) supervias (SV) into a 3 nm node test vehicle, bypassing an intermediate 21 nm pitch layer, is demonstrated…”
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A 42.5 Mchip/s direct sequence spread spectrum receiver with digital IF and integrated ARM6 core by Gyselinckx, B., Rynders, L., Engels, M., Bolsens, I.

“…This paper reports on a direct sequence spread spectrum (DSSS) ASIC, which integrates all the digital functions of an L-band satellite pager. The ASIC performs…”
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