Search Results - "Ryaboshtan, Yu. L."

New Highly Reliable Optical Transmitting Modules Based on High-Power Superluminescent Diodes in the Spectral Range of 1.5–1.6 μm by Sabitov, D. R., Svetogorov, V. N., Ryaboshtan, Yu. L., Ladugin, M. A., Marmalyuk, A. A., Vasil’ev, M. G., Vasil’ev, A. M., Kostin, Yu. O., Shelyakin, A. A.

“…We report the fabrication of 1.5–1.6 μm light-emitting modules based on an AlGaInAs/InP heterostructure with strain-compensated quantum wells in new, smaller,…”
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Features of High-Power Uni-Traveling-Carrier InGaAs/InP Photodiodes by Bragin, N. N., Svetogorov, V. N., Ryaboshtan, Yu. L., Marmalyuk, A. A., Ivanov, A. V., Ladugin, M. A.

“…A comparison is made of conventional pin photodetectors and modern uni-traveling-carrier photodetectors based on InGaAs/InP heterostructures. The differences…”
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Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation by Slipchenko, S. O., Podoskin, A. A., Gavrina, P. S., Kirichenko, Yu. K., Shuvalova, N. V., Rudova, N. A., Kapitonov, V. A., Leshko, A. Yu, Shushkanov, I. V., Zolotarev, V. V., Kryuchkov, V. A., Pikhtin, N. A., Bagaev, T. A., Yarotskaya, I. V., Svetogorov, V. N., Ryaboshtan, Yu. L., Ladugin, M. A., Marmalyuk, A. A., Simakov, V. A.

“…Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20 V were developed and studied. In current pulse generation…”
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Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm by Boltar, K. O., Irodov, N. A., Sednev, M. V., Marmalyuk, A. A., Ladugin, M. A., Ryaboshtan, Yu. L.

“…I – V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds (MOC-hydride epitaxy) of…”
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Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates by Kudryatvsev, K. E., Dubinov, A. A., Aleshkin, V. Ya, Yurasov, D. V., Gorlachuk, P. V., Ryaboshtan, Yu. L., Marmalyuk, A. A., Novikov, A. V., Krasilnik, Z. F.

“…Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer…”
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Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy by Ladugin, M. A., Andreev, A. Yu, Yarotskaya, I. V., Ryaboshtan, Yu. L., Bagaev, T. A., Padalitsa, A. A., Marmalyuk, A. A., Vasil’ev, M. G.

“…— This paper presents results of a comparative experimental study aimed at producing GaAs/GaInP and GaAs/AlGaAs quantum wells (QWs) by metalorganic vapor phase…”
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Epitaxial structures for InGaAs/InP avalanche photodiodes by Budtolaev, A. K., Khakuashev, P. E., Chinareva, I. V., Gorlachuk, P. V., Ladugin, M. A., Marmaluk, A. A., Ryaboshtan, Yu. L., Yarotskaya, I. V.

“…The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied…”
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Implementation of energy barrier layers for 1550 nm high-power laser diodes by Veselov, D.A., Pikhtin, N.A., Slipchenko, S.O., Kirichenko, I.K., Podoskin, A.A., Shuvalova, N.V., Rudova, N.A., Vavilova, L.S., Rastegaeva, M.G., Bagaev, T.A., Svetogorov, V.N., Padalitsa, A.A., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A.

“…The influence of a thin AlInAs energy barrier on the efficiency of 1550 nm high-power semiconductor lasers efficiency has been experimentally studied. It was…”
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Electroluminescence Spectra of “Red” LED AlGaInP / GaAs Structures by Marmalyuk, А. А., Gorlachuk, P. V., Ryaboshtan, Yu. L., Brudnyi, V. N., Prudaev, I. А., Romanov, I. S., Lelekov, М. А.

“…The results of studies of the electroluminescence spectra of “red” light-emitting diode (LED) AlGaInP/GaAs structures grown by the MOCVD method are reported…”
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InGaAs/InGaAsP/InP heterostructures for high-power photodetectors by Bragin, N.N., Svetogorov, V.N., Ryaboshtan, Yu. L., Marmalyuk, A.A., Ivanov, A.V., Ladugin, M.A., Semenov, A.S.

“…A UTC photodetector based on InGaAs/InGaAsP/InP heterostructures grown by MOCVD is demonstrated. A model of the band diagram of the photodetector is proposed…”
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Energy Barrier Layers and Internal Optical Loss in 1400-1600 nm Semiconductor Lasers by Veselov, D. A., Bobretsova, Yu. K., Rastegaeva, M. G., Voronkova, N. V., Ladugin, M. A., Ryaboshtan, Yu. L., Marmalyuk, A. A., Slipchenko, S. O., Pikhtin, N. A.

“…We investigated the effect of AlInAs energy barrier layers on the edge-emitting lasers of 1400-1600 nm spectral range. It was shown that the barrier layer at…”
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Charge Carrier Transport in LEDs Based on Multiple (AlxGa1–x)0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells by Prudaev, I. A., Oleinik, V. L., Romanov, I. S., Brudnyi, V. N., Ryaboshtan, Yu. L., Gorlachuk, P. V., Marmalyuk, А. А.

“…The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple (Al x Ga 1– x ) 0.5 In…”
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High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region by Gorlachuk, P. V., Ryaboshtan, Yu. L., Marmalyuk, A. A., Kurnosov, V. D., Kurnosov, K. V., Zhuravleva, O. V., Romantsevich, V. I., Chernov, R. V., Ivanov, A. V., Simakov, V. A.

“…The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions…”
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Recombination Currents in Light-Emitting Diodes based on (AlxGa1–x)0.5In0.5P/(AlyGa1–y)0.5In0.5P Multiple Quantum Wells by Prudaev, I. А., Skakunov, M. S., Lelekov, М. А., Ryaboshtan, Yu. L., Gorlachuk, P. V., Marmalyuk, А. А.

“…The results of experimental studies of the effect of temperature on the forward current-voltage characteristics of light-emitting diodes (LEDs) with an active…”
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Strain-compensated active region of high-power laser diodes based on AlxGayIn1-x-yAs/InP by Svetogorov, V. N., Ryaboshtan, Yu. L., Ladugin, M. A., Marmalyuk, A. A., Bagaeva, O. O., Romantsevich, V. I., Kurnosov, K. V., Kurnosov, V. D., Ivanov, A. V.

“…High-power laser diodes based on Al x Ga y In 1-x-y As/InP heterostructures emitting in the region of 1.5 - 1.6 μm are actively used in various fields of human…”
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1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures by Lyutetskiĭ, A. V., Borshchev, K. S., Bondarev, A. D., Nalet, T. A., Pikhtin, N. A., Slipchenko, S. O., Fetisova, N. V., Khomylev, M. A., Marmalyuk, A. A., Ryaboshtan, Yu. L., Simakov, V. A., Tarasov, I. S.

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1.8-{mu}m laser diodes based on quantum-size AlInGaAs/InP heterostructures by Lyutetskii, A. V., Borshchev, K. S., Bondarev, A. D., Nalet, T. A., Pikhtin, N. A., Slipchenko, S. O., Fetisova, N. V., Khomylev, M. A., Marmalyuk, A. A., Ryaboshtan, Yu. L., Simakov, V. A., Tarasov, I. S.

“…The concept of power semiconductor lasers based on asymmetric separate confinement heterostructures is applied to the AlInGaAs/InP heterostructures. The laser…”
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Quantum cascade laser grown by MOCVD and operating at 9,7 μm by Ladugin, M. A., Andreev, A. Yu, Bagaev, T. A., Gorlachuk, P. V., Lobintsov, A. V., Marmalyuk, A. A., Padalitsa, A. A., Ryaboshtan, Yu L., Sapozhnikov, S. M., Simakov, V. A., Telegin, K. Yu, Zasavitskii, I. I., Zubov, A. N.

“…A quantum cascade laser emitting in the spectral range of 9.7 μm at 77 K has been developed. The laser heterostructure based on GaAs/AlGaAs was grown by the…”
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Effect of waveguide design on AlGalnAs/InP laser diode characteristics by Veselov, D. A., Shashkin, I. S., Ayusheva, K. R., Lyutetskiy, A. V., Pikhtin, N. A., Slipchenko, S. O., Padalitsa, A. A., Ladugin, M. A., Marmalyuk, A. A., Ryaboshtan, Yu L., Tarasov, I. S.

“…1550nm-lasers based on MOCVD-grown heterostructures are investigated. It is determined, that additional barrier layers grown between waveguide and cladding…”
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Application of AFM methods to control technological operations in the process of manufacturing phosphide-based hetero-bipolar transistors by Torkhov, N. A., Bozhkov, V. G., Novikov, V. A., Ivonin, I. V., Marmalyuk, A. A., Ryaboshtan, Yu. L.

“…It was shown that modern AFM methods of controlling geometry and physical parameters of semiconductor InP/InGaAs/InP heterostructures can be successfully…”
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