Search Results - "Ruzzarin, Maria"

Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors by Ge, Mei, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Ruzzarin, Maria, Chen, Dunjun, Lu, Hai, Yu, Xinxin, Zhou, Jianjun, De Santi, Carlo, Zhang, Rong, Zheng, Youdou

“…The gate reliability of p-GaN gate AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under a…”
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Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs by Meneghesso, Gaudenzio, Bisi, Davide, Rossetto, Isabella, Ruzzarin, Maria, Meneghini, Matteo, Zanoni, Enrico

“…This paper reviews the most relevant threshold-voltage instabilities and dielectric breakdown mechanisms in GaN-based transistors with…”
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Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility…”
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Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator by Ruzzarin, Maria, De Santi, Carlo, Yu, Feng, Fatahilah, Muhammad Fahlesa, Strempel, Klaas, Wasisto, Hutomo Suryo, Waag, Andreas, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo

“…We present an extensive investigation of the charge-trapping processes in vertical GaN nanowire FETs with a gate-all-around structure. Two sets of devices were…”
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Reliability and failure analysis in power GaN-HEMTs: An overview by Meneghini, Matteo, Rossetto, Isabella, De Santi, Carlo, Rampazzo, Fabiana, Tajalli, Alaleh, Barbato, Alessandro, Ruzzarin, Maria, Borga, Matteo, Canato, Eleonora, Zanoni, Enrico, Meneghesso, Gaudenzio

“…Power GaN transistors have recently demonstrated to be excellent devices for application in power electronics. The high breakdown field and the superior…”
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Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors by Ruzzarin, Maria, Meneghini, Matteo, de Santi, Carlo, Neviani, Andrea, Yu, Feng, Strempel, Klaas, Fatahilah, Muhammad Fahlesa, Witzigmann, Bernd, Wasisto, Hutomo Suryo, Waag, Andreas, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper investigates the degradation of vertically aligned gallium nitride (GaN) nanowire (NW) arrays submitted to gate bias stress and UV light. Based on…”
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Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress by Ruzzarin, Maria, Meneghini, Matteo, Rossetto, Isabella, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter demonstrates that GaN-based MIS-HEMTs submitted to stress with high-temperature, high drain bias, and constant source current (HTSC stress) may…”
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Degradation Mechanisms of GaN‐Based Vertical Devices: A Review by Meneghini, Matteo, Fabris, Elena, Ruzzarin, Maria, De Santi, Carlo, Nomoto, Kazuki, Hu, Zhenqi, Li, Wenshen, Gao, Xingya, Jena, Debdeep, Xing, Huili Grace, Sun, Min, Palacios, Tomas, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This article reviews most recent results on the reliability of vertical GaN‐based devices, by presenting a few case studies focused on the stability and…”
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Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis by Rossetto, Isabella, Meneghini, Matteo, Rizzato, Vanessa, Ruzzarin, Maria, Favaron, Andrea, Stoffels, Steve, Van Hove, Marleen, Posthuma, Niels, Wu, Tian-Li, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This paper investigates the robustness of normally-off High Electron Mobility Transistors (HEMTs) with p-GaN gate submitted to forward gate bias overstress. By…”
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GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift by Dalcanale, Stefano, Meneghini, Matteo, Tajalli, Alaleh, Rossetto, Isabella, Ruzzarin, Maria, Zanoni, Enrico, Meneghesso, Gaudenzio, Moens, Peter, Banerjee, Abhishek, Vandeweghe, Steven

“…This paper reports on the trapping mechanism of GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) designed to work in a…”
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Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) by Ruzzarin, Maria, Borga, Matteo, Zanoni, Enrico, Meneghini, Matteo, Meneghesso, Gaudenzio, Ji, Dong, Li, Wenwen, Chan, Silvia H., Agarwal, Anchal, Gupta, Chirag, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti

“…Vertical GaN devices are currently studied for application in next-generation power converters, but very little is known about their reliability. This work…”
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