Search Results - "Ruzhevich, M. S."
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Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement
Published in Semiconductors (Woodbury, N.Y.) (01-05-2023)“…The electroluminescent characteristics of the InAs/InAs 1– y Sb y /InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the…”
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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te
Published in Semiconductors (Woodbury, N.Y.) (01-04-2024)“…The results of photoluminescence (PL) study of As-doped Cd 0.3 Hg 0.7 Te solid solutions films grown by molecular beam epitaxy on a Si substrate are presented…”
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Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te
Published in Semiconductors (Woodbury, N.Y.) (2024)“…An Erratum to this paper has been published: https://doi.org/10.1134/S1063782624060010…”
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Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films
Published in Semiconductors (Woodbury, N.Y.) (01-12-2023)“…The results of comparative studies of the optical and structural properties of Hg 0.7 Cd 0.3 Te bulk crystals and epitaxial films grown by various methods are…”
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5
Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films
Published in Semiconductors (Woodbury, N.Y.) (01-02-2024)“…The results of a study of photoluminescence (PL) of epitaxial films of Hg 0.3 Cd 0.7 Te and Hg 0.7 Cd 0.3 Te solid solutions grown by molecular beam epitaxy…”
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Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study
Published in Solid state communications (15-12-2024)“…Photoluminescence (PL) and photoreflectance (PR) spectroscopy were used for the optical study of arsenic doping of HgCdTe grown by molecular beam epitaxy…”
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