Determination of the eigenstates and wavefunctions of a single gated As donor

Current semiconductor devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottoms-up perspective, the smallest functional element within a nanodevice would be a single (dopant) atom itself. Control and understand...

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Bibliographic Details
Published in:	2008 International Conference on Nanoscience and Nanotechnology pp. 164 - 167
Main Authors:	Lansbergen, G.P., Rahman, R., Wellard, C.J., Rutten, P.E., Caro, J., Woo, I., Colleart, N., Biesemans, S., Klimeck, G., Hollenberg, L.C.L., Rogge, S.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-02-2008
Subjects:	Electric fields Electric potential Electrodes FinFETs Logic gates Quantum computing Resonant tunneling spectrosopy Silicon Single donor
Online Access:	Get full text
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Summary:	Current semiconductor devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottoms-up perspective, the smallest functional element within a nanodevice would be a single (dopant) atom itself. Control and understanding over the eigenenergies and wavefunctions of a single dopant could prove a key ingredient for device technology beyond-CMOS. Here, we will discuss the eigenlevels of a single As donor in a three terminal configuration. The donor is incorporated in the channel of prototype transistors called FinFETs. The measured eigenlevels are shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The theoretical framework in which we describe this system (NEMO-3D) is based on a tight-binding approximation.
ISBN:	1424415039 9781424415038
ISSN:	2150-3591 2150-3605
DOI:	10.1109/ICONN.2008.4639272