Search Results - "Ruterana, P."

The strain models of misfit dislocations at cubic semiconductors hetero-interfaces by Wang, Yi, Ruterana, P.

“…The misfit dislocations at cubic semiconductors hetero-interfaces were quantitatively investigated by high angle dark field scanning transmission electron…”
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Implantation damage formation in a-, c- and m-plane GaN by Lorenz, K., Wendler, E., Redondo-Cubero, A., Catarino, N., Chauvat, M.-P., Schwaiger, S., Scholz, F., Alves, E., Ruterana, P.

“…Epitaxial GaN layers with a-, c- and m-plane surface orientations were implanted with 300 keV Ar-ions at 15 K with fluences ranging from 2 × 1012 to…”
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WALANT technique versus locoregional anesthesia in the surgical management of metacarpal and phalangeal fractures: Lessons from the Covid-19 crisis by Ruterana, P., Abitbol, A., Castel, L.-C., Gregory, T.

“…Wide Awake Local Anesthesia No Tourniquet (WALANT) is an anesthetic method which uses a local injection of anesthetic and epinephrine, avoiding use of a…”
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Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures by Fialho, M., Magalhães, S., Rodrigues, J., Chauvat, M.P., Ruterana, P., Monteiro, T., Lorenz, K., Alves, E.

“…AlxGa1−xN (x = 0.20, 0.50, 0.63) films grown on (0001) sapphire substrates by metal organic chemical vapor phase deposition were implanted with Tb ions at…”
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Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures by Minj, A., Romero, M. F., Wang, Y., Tuna, Ö., Feneberg, M., Goldhahn, R., Schmerber, G., Ruterana, P., Giesen, C., Heuken, M.

“…The optical properties of fully coherently grown single InGaN/GaN heterostructures for 12 < I n % < 17 were investigated under low and high density…”
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The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template by BEN AMMAR, H., MINJ, A., CHAUVAT, M.‐P., GAMARRA, P., LACAM, C., MORALES, M., RUTERANA, P.

“…Summary Defects in quaternary InAlGaN barriers and their effects on crystalline quality and surface morphology have been studied. In addition to growth…”
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Incorporation of Europium into GaN Nanowires by Ion Implantation by Faye, D. Nd, Biquard, X, Nogales, E, Felizardo, M, Peres, M, Redondo-Cubero, A, Auzelle, T, Daudin, B, Tizei, L. H. G, Kociak, M, Ruterana, P, Möller, W, Méndez, B, Alves, E, Lorenz, K

“…Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline…”
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Interface dislocations in InxGa1–xN/GaN heterostructures by Li, Q. T., Minj, A., Chauvat, M. P., Chen, J., Ruterana, P.

“…Interface dislocations have been investigated by transmission electron microscopy for InxGa1–xN (50 nm)/GaN heterostructures grown by metal‐organic vapor phase…”
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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure by Ben Ammar, H., Minj, A., Gamarra, P., Lacam, C., Tordjman, M., di Forte‐Poisson, M. A., Morales, M., Chauvat, M. P., Ruterana, P.

“…In this work, we have investigated the non‐intentional incorporation of gallium in InAlN layers grown by metal organic vapor phase epitaxy (MOVPE) using two…”
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Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers by WANG, X., CHAUVAT, M.‐P., RUTERANA, P., WALTHER, T.

“…Summary We have applied our previous method of self‐consistent k*‐factors for absorption correction in energy‐dispersive X‐ray spectroscopy to quantify the…”
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The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism by Wang, Yi, Ruterana, P., Kret, S., El Kazzi, S., Desplanque, L., Wallart, X.

“…The misfit and threading dislocations during GaSb epitaxy on GaAs substrate were investigated by weak beam dark field and high angle dark field scanning…”
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Half metallic properties of the quaternary CuFe2GaSe4 chalcogenide compound by Medina, S., Bouhafs, B., Ruterana, P.

“…•The results show that LDA+U improve the description of the electronic structure.•The CuFe2GaSe4 is HM ferromagnetic when the coulomb repulsion U is used.•The…”
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P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm by Valdueza-Felip, S., Ajay, A., Redaelli, L., Chauvat, M.P., Ruterana, P., Cremel, T., Jiménez-Rodríguez, M., Kheng, K., Monroy, E.

“…We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x=0.10-.0.40) synthesized by…”
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First-principles calculations on the electronic structure of TiCxN1−x, ZrxNb1−xC and HfCxN1−x alloys by Zaoui, A., Bouhafs, B., Ruterana, P.

“…We investigated the structural, elastic and electronic properties of a series of early transition metal carbides and nitrides, namely, those formed with 3d…”
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Convergent beam electron diffraction investigation of inversion domains in GaN by Ruterana, P.

“…Gallium nitride is of wurtzite or zincblende structure, therefore, it exhibits a polar character along many directions. Its growth on the surface of a…”
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Structure of the carrot defect in 4H-SiC epitaxial layers by Benamara, M., Zhang, X., Skowronski, M., Ruterana, P., Nouet, G., Sumakeris, J. J., Paisley, M. J., O'Loughlin, M. J.

“…Transmission electron microscopy and KOH etching were used to determine the structure of the carrot defect in 4H-SiC epilayers. The defect consists of two…”
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Mechanism of formation of the misfit dislocations at the cubic materials interfaces by Wang, Yi, Ruterana, P., Kret, S., Chen, J., El Kazzi, S., Desplanque, L., Wallart, X.

“…High-angle annular dark-field scanning transmission electron microscopy and molecular dynamic simulation are applied to study the misfit dislocations at the…”
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Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer by Desplanque, L., El Kazzi, S., Coinon, C., Ziegler, S., Kunert, B., Beyer, A., Volz, K., Stolz, W., Wang, Y., Ruterana, P., Wallart, X.

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Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 155µm by Monroy, L., Jiménez-Rodríguez, M., Ruterana, P., Monroy, E., González-Herráez, M., Naranjo, F. B.

“…We report on the improvement of performance of InN-based saturable absorbers in fiber lasers operating at 1.55 µm by reducing the residual doping, due to the…”
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Porous GaN and High‑κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon by Bilousov, O. V, Carvajal, J. J, Vilalta-Clemente, A, Ruterana, P, Díaz, F, Aguiló, M, O’Dwyer, C

“…Porous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg2N3 precursor…”
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