Search Results - "Russ, Christian C."

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  1. 1

    On the Electrostatic Discharge Robustness of Graphene by Hong Li, Russ, Christian C., Wei Liu, Johnsson, David, Gossner, Harald, Banerjee, Kaustav

    Published in IEEE transactions on electron devices (01-06-2014)
    “…A comprehensive study of electrostatic discharge (ESD) characterization of atomically thin graphene is reported. In a material comprising only a few atomic…”
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    Journal Article
  2. 2

    ESD protection solutions for high voltage technologies by Keppens, Bart, Mergens, Markus P.J., Trinh, Cong Son, Russ, Christian C., Van Camp, Benjamin, Verhaege, Koen G.

    Published in Microelectronics and reliability (01-05-2006)
    “…There is a trend to revive mature technologies while including high voltage options. ESD protection in those technologies is challenging due to narrow ESD…”
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    Journal Article Conference Proceeding
  3. 3

    High holding current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation by Mergens, Markus P.J., Russ, Christian C., Verhaege, Koen G., Armer, John, Jozwiak, Phillip C., Mohn, Russ

    Published in Microelectronics and reliability (01-07-2003)
    “…This paper presents a novel Silicon Controlled Rectifier (SCR) for power line and local I/O ESD protection. The High holding current SCRs (HHI-SCR) exhibits a…”
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    Journal Article
  4. 4

    Novel fully silicided ballasting and MFT design techniques for ESD protection in advanced deep sub-micron CMOS technologies by Verhaege, Koen G, Russ, Christian C

    Published in Microelectronics and reliability (01-11-2001)
    “…A universal technique to design cost effective, fully silicided, high performance ESD devices is introduced [All rights reserved – Patents Pending]. This novel…”
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    Journal Article
  5. 5

    Advanced SCR ESD protection circuits for CMOS/SOI nanotechnologies by Mergens, M.P.J., Marichal, O., Thijs, S., Van Camp, B., Russ, C.C.

    “…This paper reviews the application of SCR-based ESD protection circuits in advanced CMOS/SOI technologies. The devices are integrated in a flexible modular…”
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    Conference Proceeding
  6. 6

    2012 best student paper award by Li, Hong, Liu, Wei, Banerjee, Kaustav, Russ, Christian C., Johnsson, David, Gossner, Harald

    “…The award winners and the titles of their award winning papers are listed…”
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    Conference Proceeding
  7. 7

    2012 best paper award by Li, Hong, Liu, Wei, Banerjee, Kaustav, Russ, Christian C., Johnsson, David, Gossner, Harald

    “…The award winners and the titles of their award winning papers are listed…”
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    Conference Proceeding
  8. 8

    ESD characterization of atomically-thin graphene by Hong Li, Russ, C. C., Wei Liu, Johnsson, D., Gossner, H., Banerjee, K.

    “…A first-time study of ESD characterization of atomically-thin graphene is reported. In a material comprising only a few atomic layers, It2 reaches 4 mA/μm for…”
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    Conference Proceeding
  9. 9

    ESD protection solutions for high voltage technologies by Keppens, B., Mergens, M.P.J., Cong Son Trinh, Russ, C.C., Van Camp, B., Verhaege, K.G.

    “…There is a trend to revive mature technologies while including high voltage options. ESD protection in those technologies is challenging due to narrow ESD…”
    Get full text
    Conference Proceeding
  10. 10

    High Holding Current SCRs (HHI-SCR) for ESD protection and latch-up immune IC operation by Mergens, Markus P.J., Russ, Christian C., Verhaege, Koen G., Armer, John, Jozwiak, Phillip C., Mohn, Russ

    “…This paper presents a novel SCR for power line and local I/O ESD protection. The HHI-SCR exhibits a dual ESD clamp characteristic: low-current high-voltage…”
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    Conference Proceeding
  11. 11

    ESD Evaluation of the Emerging MuGFET Technology by Russ, C., Gossner, H., Schulz, T., Chaudhary, N., Weize Xiong, Marshall, A., Duvvury, C., Schrufer, K., Rinn Cleavelin, C.R.

    “…Electrostatic discharge (ESD) characteristics of fully depleted FinFET devices are presented and compared to planar structures manufactured in the same…”
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    Magazine Article