Search Results - "Ruppalt, L.B."

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  1. 1
    Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC

    Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC by Ruppalt, L.B., Stafford, S., Yuan, D., Jones, K.A., Ervin, M.H., Kirchner, K.W., Zheleva, T.S., Wood, M.C., Geil, B.R., Forsythe, E., Vispute, R.D., Venkatesan, T.

    Published in Solid-state electronics (01-02-2003)
    “…A dual BN/AlN capping layer has been developed for annealing implanted SiC up to a temperature of at least 1700 °C. The AlN is used as a protective layer on…”
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    Journal Article
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  2. 2
    Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110)

    Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110) by Ruppalt, L.B., Albrecht, P.M., Lyding, J.W.

    “…We have applied single walled carbon nanotubes (SWNTs) to the cleaved GaAs(110) surface in ultra high vacuum using a dry contact transfer (DCT) procedure and…”
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    Conference Proceeding
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