Search Results - "Runnion, E.F."

Limitations on oxide thicknesses in flash EEPROM applications by Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.

“…Oxides used in EEPROMs have severe limitations placed on leakage currents due to long data retention time requirements. During write/erase (W/E) cycling,…”
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Thickness dependence of stress-induced leakage currents in silicon oxide by Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.C.

“…The thickness dependence of high-voltage stress-induced leakage currents (SILC's) has been measured in oxides with thicknesses between 5 and 11 nm. The SILC's…”
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Thickness dependence of low-level leakages in thin oxides by Gladstone, S.M., Scott, R.S., Runnion, E.F., Hughes, T.W., Dumin, D.J., Mitros, J.C., Lie, L.

“…The wearout of 4 nm to 13 nm thick oxides fabricated on n-type and p-type substrates was measured. The interface trap densities, flatband voltage shifts, bulk…”
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