Search Results - "Runiu Fang"

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  1. 1

    Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers by Fang, Runiu, Sun, Xin, Miao, Min, Jin, Yufeng

    Published in IEEE transactions on electron devices (01-12-2015)
    “…Along with extensive applications of through-silicon vias (TSVs) in 3-D systems, such as digital, logic, and memory modules, the accurate modeling of coupling…”
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    Journal Article
  2. 2

    Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes by FANG, Runiu, SUN, Xin, MIAO, Min, JIN, Yufeng

    Published in AIP advances (01-04-2015)
    “…Although a through-silicon via (TSV) is widely used in three-dimensional integrated circuit systems, one of its major design challenges is noise coupling…”
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    Journal Article
  3. 3

    Design, Fabrication, and Performance Characterization of LTCC-Based Capacitive Accelerometers by Liu, Huan, Fang, Runiu, Miao, Min, Zhang, Yichuan, Yan, Yingzhan, Tang, Xiaoping, Lu, Huixiang, Jin, Yufeng

    Published in Micromachines (Basel) (09-03-2018)
    “…In this paper, two versions of capacitive accelerometers based on low-temperature co-fired ceramic (LTCC) technology are developed, different with respect to…”
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    Journal Article
  4. 4

    Defect Detection for the TSV Transmission Channel Using Machine Learning Approach by Liu, Huan, Fang, Runiu, Miao, Min, Yang, Yang, Jin, Yufeng

    “…Through silicon via (TSV) is a key enabler for 3D integration technology to provide high-density and high-speed transmission channels. However, the serious…”
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    Conference Proceeding
  5. 5

    Accurate Electrical Modeling of Through Silicon Via with Minority Carrier Redistribution Effect by Huan Liu, Runiu Fang, Xin Sun, Min Miao, Yufeng Jin

    “…Accurate electrical models for Through Silicon Via (TSV) are critical for 3D integration system design, in which TSV capacitance plays an important role…”
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    Conference Proceeding
  6. 6

    Accurate Modeling of the Capacitance of Through-Silicon Via Considering Minority Carrier Effects by Liu, Huan, Fang, Runiu, Miao, Min, Jin, Yufeng

    “…The 3-D integration of integrated circuits based on through-silicon via (TSV) is a promising technology to achieve high-performance, multifunctional, and…”
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    Journal Article
  7. 7

    Stabilization and utilization of coupling MOS capacitance between TSVs by Runiu Fang, Huan Liu, Min Miao, Xin Sun, Yufeng Jin

    “…Through-silicon via (TSV) is a key enabler for future 3-D integrated circuits. Due to MOS (Metal-Oxide-Semiconductor) effect, the coupling capacitor between…”
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    Conference Proceeding
  8. 8

    Modeling and Design of a 3D Interconnect Based Circuit Cell Formed with 3D SiP Techniques Mimicking Brain Neurons for Neuromorphic Computing Applications by Min Miao, Liyuan Wang, Tianfang Chen, Xiaoyang Duan, Jincan Zhang, Na Li, Lei Sun, Runiu Fang, Xin Sun, Huan Liu, Yufeng Jin

    “…Neuromorphic computing that physically mimics human brain, is considered as one of the rebooting computing frontiers, promising in far-reaching applications…”
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    Conference Proceeding
  9. 9

    Bias-dependent high frequency characterization of through-silicon via (TSV) for 3D integration by Xin Sun, Runiu Fang, Huan Liu, Min Miao, Yufeng Jin

    “…In this paper, high frequency measurement of TSV structures under different DC bias conditions are carried out. The impact of the MOS capacitance effect of TSV…”
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    Conference Proceeding
  10. 10

    Modeling and analysis of TSV noise coupling and suppression methods for 20nm node and beyond by Runiu Fang, Xin Sun, Yufeng Jin, Min Miao

    “…With the technology nodes keep advancing, the application of TSV(Through Silicon Via) technology in 3D integration is faced with more challenges. The shift…”
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    Conference Proceeding
  11. 11

    Thermal-mechanical reliability assessment of TSV structure for 3D IC integration by Huan Liu, Qinghua Zeng, Yong Guan, Runiu Fang, Xin Sun, Fei Su, Jing Chen, Min Miao, Yufeng Jin

    “…In this paper, thermal-mechanical reliability of TSV structure was investigated with thermal shock test and finite element method. The fine pitch TSV samples…”
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    Conference Proceeding
  12. 12

    Simulation-based investigation in effects of design parameters on electrical characters for a TSV-bump combination by Runiu Fang, Xin Sun, Min Miao, Yufeng Jin

    “…The silicon industry has witnessed a half-century gallop of electronics. When technologies reached their limits, new technologies are budding out and prolong…”
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    Conference Proceeding
  13. 13

    Fast time domain crosstalk analysis of through silicon vias based on equivalent circuit model by Zhilong Zhang, Runiu Fang, Guanjiang Wang, Xin Sun, Yufeng Jin, Min Miao

    “…Three-dimensional (3D) integration has been considered as the most promising method to overcome the interconnection bottleneck with through-silicon vias(TSVs)…”
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    Conference Proceeding
  14. 14
  15. 15

    Electrical measurement and analysis of TSV/RDL for 3D integration by Xin Sun, Runiu Fang, Yunhui Zhu, Xiao Zhong, Yuan Bian, Shenglin Ma, Min Miao, Jing Chen, Yan Wang, Yufeng Jin

    “…In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of…”
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    Conference Proceeding
  16. 16

    Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration by Sun, Xin, Fang, Runiu, Zhu, Yunhui, Zhong, Xiao, Bian, Yuan, Guan, Yong, Miao, Min, Chen, Jing, Jin, Yufeng

    Published in Microelectronic engineering (05-01-2016)
    “…Measurement-based electrical characterization of through silicon via (TSV) and redistribution layer (RDL) is of great importance for both fabrication process…”
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    Journal Article
  17. 17

    Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production by Runiu Fang, Min Miao, Xin Sun, Yunhui Zhu, Guanjiang Wang, Yichao Xu, Minggang Sun, Yufeng Jin

    “…In the first three quarters of 2013, semiconductor industry witnessed a great multiplication of 12-inch TSV wafers mounting to 1 million plus scale. Despite…”
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    Conference Proceeding
  18. 18

    A thick film accelerometer based on LTCC-technology by Shichao Guo, Min Miao, Runiu Fang, Duwei Hu, Yufeng Jin

    “…This paper reports a thick film accelerometers based on LTCC technology. The authors introduce a LTCC compatible design and develop a fabrication process flow…”
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    Conference Proceeding
  19. 19

    Study of TSV leakage current and breakdown voltage by Yichao Xu, Guanjiang Wang, Yichao Xu, Xin Sun, Runiu Fang, Min Miao, Yufeng Jin

    “…Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in this study. In addition, an in-line testing methodology is…”
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    Conference Proceeding
  20. 20

    High speed test structures for in-line process of 3D system in packaging by Guanjiang Wang, Zhiyuan Zhu, Yichao Xu, Runiu Fang, Min Miao, Yufeng Jin

    “…As the requirement of portable and smart devices rapidly increasing, applications of high performance 3D integration and M/NEMS packaging have enormous market…”
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    Conference Proceeding