Search Results - "Runiu Fang"
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1
Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers
Published in IEEE transactions on electron devices (01-12-2015)“…Along with extensive applications of through-silicon vias (TSVs) in 3-D systems, such as digital, logic, and memory modules, the accurate modeling of coupling…”
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Journal Article -
2
Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes
Published in AIP advances (01-04-2015)“…Although a through-silicon via (TSV) is widely used in three-dimensional integrated circuit systems, one of its major design challenges is noise coupling…”
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Journal Article -
3
Design, Fabrication, and Performance Characterization of LTCC-Based Capacitive Accelerometers
Published in Micromachines (Basel) (09-03-2018)“…In this paper, two versions of capacitive accelerometers based on low-temperature co-fired ceramic (LTCC) technology are developed, different with respect to…”
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Journal Article -
4
Defect Detection for the TSV Transmission Channel Using Machine Learning Approach
Published in 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) (01-05-2019)“…Through silicon via (TSV) is a key enabler for 3D integration technology to provide high-density and high-speed transmission channels. However, the serious…”
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Conference Proceeding -
5
Accurate Electrical Modeling of Through Silicon Via with Minority Carrier Redistribution Effect
Published in 2018 IEEE 68th Electronic Components and Technology Conference (ECTC) (01-05-2018)“…Accurate electrical models for Through Silicon Via (TSV) are critical for 3D integration system design, in which TSV capacitance plays an important role…”
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Conference Proceeding -
6
Accurate Modeling of the Capacitance of Through-Silicon Via Considering Minority Carrier Effects
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-05-2020)“…The 3-D integration of integrated circuits based on through-silicon via (TSV) is a promising technology to achieve high-performance, multifunctional, and…”
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Journal Article -
7
Stabilization and utilization of coupling MOS capacitance between TSVs
Published in 2016 IEEE 18th Electronics Packaging Technology Conference (EPTC) (01-11-2016)“…Through-silicon via (TSV) is a key enabler for future 3-D integrated circuits. Due to MOS (Metal-Oxide-Semiconductor) effect, the coupling capacitor between…”
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Conference Proceeding -
8
Modeling and Design of a 3D Interconnect Based Circuit Cell Formed with 3D SiP Techniques Mimicking Brain Neurons for Neuromorphic Computing Applications
Published in 2018 IEEE 68th Electronic Components and Technology Conference (ECTC) (01-05-2018)“…Neuromorphic computing that physically mimics human brain, is considered as one of the rebooting computing frontiers, promising in far-reaching applications…”
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Conference Proceeding -
9
Bias-dependent high frequency characterization of through-silicon via (TSV) for 3D integration
Published in 2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) (01-07-2016)“…In this paper, high frequency measurement of TSV structures under different DC bias conditions are carried out. The impact of the MOS capacitance effect of TSV…”
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Conference Proceeding -
10
Modeling and analysis of TSV noise coupling and suppression methods for 20nm node and beyond
Published in 2014 15th International Conference on Electronic Packaging Technology (01-05-2014)“…With the technology nodes keep advancing, the application of TSV(Through Silicon Via) technology in 3D integration is faced with more challenges. The shift…”
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Conference Proceeding -
11
Thermal-mechanical reliability assessment of TSV structure for 3D IC integration
Published in 2016 IEEE 18th Electronics Packaging Technology Conference (EPTC) (01-11-2016)“…In this paper, thermal-mechanical reliability of TSV structure was investigated with thermal shock test and finite element method. The fine pitch TSV samples…”
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Conference Proceeding -
12
Simulation-based investigation in effects of design parameters on electrical characters for a TSV-bump combination
Published in 2012 13th International Conference on Electronic Packaging Technology & High Density Packaging (01-08-2012)“…The silicon industry has witnessed a half-century gallop of electronics. When technologies reached their limits, new technologies are budding out and prolong…”
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Conference Proceeding -
13
Fast time domain crosstalk analysis of through silicon vias based on equivalent circuit model
Published in 2014 15th International Conference on Electronic Packaging Technology (01-05-2014)“…Three-dimensional (3D) integration has been considered as the most promising method to overcome the interconnection bottleneck with through-silicon vias(TSVs)…”
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Conference Proceeding -
14
Micromachined cavity-based bandpass filter and suspended planar slow-wave structure for vacuum-microelectronic millimeter-wave/THz microsystem embedded in LTCC packaging substrates
Published in 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) (01-05-2015)“…Micromachining of ceramic packaging interposers was demonstrated by the authors in the 62nd and 63rd ECTC as one of the prospective paths leading to…”
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Conference Proceeding -
15
Electrical measurement and analysis of TSV/RDL for 3D integration
Published in 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC) (01-12-2014)“…In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of…”
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Conference Proceeding -
16
Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration
Published in Microelectronic engineering (05-01-2016)“…Measurement-based electrical characterization of through silicon via (TSV) and redistribution layer (RDL) is of great importance for both fabrication process…”
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Journal Article -
17
Investigation of a TSV-RDL in-line fault-diagnosis system and test methodology for wafer-level commercial production
Published in 2014 IEEE 64th Electronic Components and Technology Conference (ECTC) (01-05-2014)“…In the first three quarters of 2013, semiconductor industry witnessed a great multiplication of 12-inch TSV wafers mounting to 1 million plus scale. Despite…”
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Conference Proceeding -
18
A thick film accelerometer based on LTCC-technology
Published in 2012 13th International Conference on Electronic Packaging Technology & High Density Packaging (01-08-2012)“…This paper reports a thick film accelerometers based on LTCC technology. The authors introduce a LTCC compatible design and develop a fabrication process flow…”
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Conference Proceeding -
19
Study of TSV leakage current and breakdown voltage
Published in 2013 14th International Conference on Electronic Packaging Technology (01-08-2013)“…Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in this study. In addition, an in-line testing methodology is…”
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Conference Proceeding -
20
High speed test structures for in-line process of 3D system in packaging
Published in 2013 14th International Conference on Electronic Packaging Technology (01-08-2013)“…As the requirement of portable and smart devices rapidly increasing, applications of high performance 3D integration and M/NEMS packaging have enormous market…”
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Conference Proceeding