Search Results - "Rumyantsev, S."

Low frequency noise and trap density in GaN/AlGaN field effect transistors by Sai, P., Jorudas, J., Dub, M., Sakowicz, M., Jakštas, V., But, D. B., Prystawko, P., Cywinski, G., Kašalynas, I., Knap, W., Rumyantsev, S.

“…We report experimental results on the low-frequency noise in GaN/AlGaN transistors fabricated under different conditions and evaluate different methods to…”
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Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons by Rehman, A., Cywinski, G., Knap, W., Smulko, J., Balandin, A. A., Rumyantsev, S.

“…We report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the…”
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Nanometer size field effect transistors for terahertz detectors by Knap, W, Rumyantsev, S, Vitiello, M S, Coquillat, D, Blin, S, Dyakonova, N, Shur, M, Teppe, F, Tredicucci, A, Nagatsuma, T

“…Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at…”
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Plasmonic and bolometric terahertz detection by graphene field-effect transistor by Muraviev, A. V., Rumyantsev, S. L., Liu, G., Balandin, A. A., Knap, W., Shur, M. S.

“…Polarization dependence analysis of back-gated graphene field-effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two…”
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Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS2 devices by Mohammadzadeh, A., Rehman, A., Kargar, F., Rumyantsev, S., Smulko, J. M., Knap, W., Lake, R. K., Balandin, A. A.

“…We report on the depinning of nearly commensurate charge-density waves in 1T-TaS2 thin films at room temperature. A combination of the differential…”
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Homodyne phase sensitive terahertz spectrometer by Rumyantsev, S., Liu, X., Kachorovskii, V., Shur, M.

“…We present the theory of a field effect transistor (FET) operating as a THz or far infrared detector. We demonstrate that the detected signal is enhanced by…”
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Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors by Rehman, A., Delgado-Notario, J. A., Sai, P., But, D. B., Prystawko, P., Ivonyak, Y., Cywinski, G., Knap, W., Rumyantsev, S.

“…The current response to sub-terahertz radiation was studied experimentally over a wide range of temperatures for AlGaN/GaN and graphene transistors. It was…”
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Low-frequency electronic noise in the double-gate single-layer graphene transistors by Liu, G., Stillman, W., Rumyantsev, S., Shao, Q., Shur, M., Balandin, A. A.

“…The authors report the results of an experimental investigation of the low-frequency noise in the double-gate graphene transistors. The back-gate graphene…”
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Generation-recombination and 1/f noise in carbon nanotube networks by Rehman, A., Krajewska, A., Stonio, B., Pavlov, K., Cywinski, G., Lioubtchenko, D., Knap, W., Rumyantsev, S., Smulko, J. M.

“…The low-frequency noise is of special interest for carbon nanotubes devices, which are building blocks for a variety of sensors, including radio frequency and…”
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Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors by Knap, W., Deng, Y., Rumyantsev, S., Shur, M. S.

“…We report on the experiments on resonant photoresponse of the gated two-dimensional electron gas to the terahertz radiation. The visible-light-induced,…”
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Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases by Smulko, J., Drozdowska, K., Rehman, A., Welearegay, T., Österlund, L., Rumyantsev, S., Cywiński, G., Stonio, B., Krajewska, A., Filipiak, M., Sai, P.

“…We report results of the current–voltage characteristics and low-frequency noise in Au nanoparticle (AuNP)-decorated graphene–Si Schottky barrier diodes…”
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Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination by Dub, M., But, D. B., Sai, P., Ivonyak, Yu, Słowikowski, M., Filipiak, M., Cywinski, G., Knap, W., Rumyantsev, S.

“…We show that terahertz plasmons in AlGaN/GaN grating-gate structures efficiently modulate the reflection of room temperature thermal radiation, leading to…”
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Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors by Knap, W., Teppe, F., Meziani, Y., Dyakonova, N., Lusakowski, J., Boeuf, F., Skotnicki, T., Maude, D., Rumyantsev, S., Shur, M. S.

“…We report on experiments on photoresponse to sub-THz (120GHz) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at…”
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The Effect of TLR Agonists and Myokines on Secretory Activity of Adipogenically Differentiated MSC Cultures by Shestopalov, A. V., Mishra, A., Gaponov, A. M., Rumyantsev, S. A.

“…We studied the effect of bacterial pathogen-associated molecular patterns and myokines on the secretion of adipokines by mesenchymal stem cells (MSC) and…”
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Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor by Teppe, F., Knap, W., Veksler, D., Shur, M. S., Dmitriev, A. P., Kachorovskii, V. Yu, Rumyantsev, S.

“…We report on room-temperature, resonant detection of 0.6 THz radiation by 250 nm gate length Ga As ∕ Al Ga As heterostructure field-effect transistor. We show…”
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Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power by Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., Gallon, C., Boeuf, F., Skotnicki, T., Fenouillet-Beranger, C., Maude, D. K., Rumyantsev, S., Shur, M. S.

“…Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120 - 300 nm have been studied as room temperature plasma wave…”
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Bounds and Maxima for the Workload in a Multiclass Orbit Queue by Morozov, Evsey V., Peshkova, Irina V., Rumyantsev, Alexander S.

“…In this research, a single-server M-class retrial queueing system (orbit queue) with constant retrial rates and Poisson inputs is considered. The main purpose…”
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Study of the Effect of Self-Heating in High-Voltage SOI Transistors with a Large Drift Region by Rumyantsev, S. V., Novoselov, A. S., Masalsky, N. V.

“…The results of studying the contribution of the self-heating mechanism to the CVCs of high-power LDMOS (laterally diffused metal oxide semiconductor)…”
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Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors by El Fatimy, A., Teppe, F., Dyakonova, N., Knap, W., Seliuta, D., Valušis, G., Shchepetov, A., Roelens, Y., Bollaert, S., Cappy, A., Rumyantsev, S.

“…The authors report on detection of terahertz radiation by high electron mobility nanometer InGaAs∕AlInAs transistors. The photovoltaic type of response was…”
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A Multi-Server Heterogeneous Queuing-Inventory System with Class-Dependent Inventory Access by Rasmi, Karumbathil, Jacob, Machuveettil Joseph, Rumyantsev, Alexander S., Krishnamoorthy, Achyutha

“…In this paper, we consider a queuing inventory system with heterogeneous customers of K types arriving according to a marked Markovian arrival process. Each…”
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