Search Results - "Rull, Alberto Medina"

Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics by Pasadas, Francisco, Medina‐Rull, Alberto, Ruiz, Francisco G., Ramos‐Silva, Javier Noe, Pacheco‐Sanchez, Anibal, Pardo, Mari Carmen, Toral‐Lopez, Alejandro, Godoy, Andrés, Ramírez‐García, Eloy, Jiménez, David, Marin, Enrique G.

“…Exploiting ambipolar electrical conductivity based on graphene field‐effect transistors has raised enormous interest for high‐frequency (HF) analog…”
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Graphene‐on‐Silicon Hybrid Field‐Effect Transistors by Fomin, Mykola, Pasadas, Francisco, Marin, Enrique G., Medina‐Rull, Alberto, Ruiz, Francisco. G., Godoy, Andrés., Zadorozhnyi, Ihor, Beltramo, Guillermo, Brings, Fabian, Vitusevich, Svetlana, Offenhaeusser, Andreas, Kireev, Dmitry

“…The combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology of…”
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Compact Modeling of Two-Dimensional Field-Effect Biosensors by Pasadas, Francisco, El Grour, Tarek, G Marin, Enrique, Medina-Rull, Alberto, Toral-Lopez, Alejandro, Cuesta-Lopez, Juan, G Ruiz, Francisco, El Mir, Lassaad, Godoy, Andrés

“…A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the…”
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A Novel Analysis of Periodic Structures Based on Loaded Transmission Lines by Medina-Rull, Alberto, Pasadas, Francisco, Marin, Enrique G., Godoy, Andres, Ruiz, Francisco G.

“…Periodically loaded transmission lines are characterized by a frequency response with regular pass and stopbands. Interestingly, each of the passbands exhibits…”
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Resistive Switching in Graphene Oxide by Romero, Francisco J., Toral, Alejando, Medina-Rull, Alberto, Moraila-Martinez, Carmen Lucia, Morales, Diego P., Ohata, Akiko, Godoy, Andres, Ruiz, Francisco G., Rodriguez, Noel

“…The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing…”
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A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications by Medina-Rull, Alberto, Pasadas, Francisco, Marin, Enrique G., Toral-Lopez, Alejandro, Cuesta, Juan, Godoy, Andres, Jimenez, David, Ruiz, Francisco G.

“…We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a…”
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Variability Assessment of the Performance of MoS2-Based BioFETs by Cuesta-Lopez, Juan, Toral-Lopez, Alejandro, Marin, Enrique G., Ruiz, Francisco G., Pasadas, Francisco, Medina-Rull, Alberto, Godoy, Andres

“…Two-dimensional material (2DM)-based Field-Effect Transistors (FETs) have been postulated as a solid alternative for biosensing applications thanks to: (i) the…”
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Graphene on Silicon Hybrid Field-Effect Transistors by Fomin, Mykola, Pasadas, Francisco, Marin, Enrique, Rull, Alberto Medina, Ruiz, Francisco, Godoy, Andres, Zadorozhnyi, Ihor, Beltramo, Guillermo, Brings, Fabian, Vitusevich, Svetlana, Offenhaeusser, Andreas, Kireev, Dmitry

“…The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for…”
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Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors by Grour, Tarek El, Pasadas, Francisco, Medina-Rull, Alberto, Najari, Montassar, Marin, Enrique G., Toral-Lopez, Alejandro, Ruiz, Francisco G., Godoy, Andres, Jimenez, David, Mir, Lassaad El

“…We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on 2-D materials. The electrostatics along the…”
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Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications by Pasadas, Francisco, Medina-Rull, Alberto, Feijoo, Pedro Carlos, Pacheco-Sanchez, Anibal, Marin, Enrique G., Ruiz, Francisco G., Rodriguez, Noel, Godoy, Andrés, Jiménez, David

“…The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus…”
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Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications by Toral-Lopez, Alejandro, Pasadas, Francisco, Marin, Enrique G., Medina-Rull, Alberto, Ruiz, Francisco J. G., Jimenez, David, Godoy, Andres

“…We present a physics-based device-to-circuit modeling approach to metal - insulator - 2D material based field-effect transistors (2DFETs). Starting from…”
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Induced Current Mismatch Correction Based on X parameters Theory by Palomo, Mikel G., Ortiz Ruiz, Sergio, Medina-Rull, Alberto, Marin, Enrique G., Pantoja, Mario F., Pasadas, Francisco, Godoy, Andres, Ruiz, Francisco G.

“…This work presents a novel characterization method, based on X-parameter theory, to estimate the induced DC current of a nonlinear device working in a…”
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Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics by Pasadas, Francisco, Medina-Rull, Alberto, Ruiz, Francisco G, Ramos-Silva, Javier Noe, Pacheco-Sanchez, Anibal, Pardo, Mari Carmen, Toral-Lopez, Alejandro, Godoy, Andrés, Ramírez-García, Eloy, Jiménez, David, Marin, Enrique G

“…Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog…”
Get full text

Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications by Pasadas, Francisco, Medina-Rull, Alberto, Feijoo, Pedro Carlos, Pacheco-Sanchez, Anibal, Marin, Enrique G, Ruiz, Francisco G, Rodriguez, Noel, Godoy, Andrés, Jiménez, David

“…Nano Express, vol. 2(3), 036001, 2021 The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality…”
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Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors by Grour, Tarek El, Pasadas, Francisco, Medina-Rull, Alberto, Najari, Montassar, Marin, Enrique G, Toral-Lopez, Alejandro, Ruiz, Francisco G, Godoy, Andrés, Jiménez, David, El-Mir, Lassaad

“…IEEE Transactions on Electron Devices, 68(11), 5916-5919, 2021 We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors…”
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