Search Results - "Ruiliang Xie"

An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration by Ruiliang Xie, Hanxing Wang, Gaofei Tang, Xu Yang, Chen, Kevin J.

“…Compared with the state-of-the-art Si-based power devices, enhancement-mode Gallium Nitride (E-mode GaN) transistors have better figures of merit and exhibit…”
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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations by Hanxing Wang, Jin Wei, Ruiliang Xie, Cheng Liu, Gaofei Tang, Chen, Kevin J.

“…The systematic characterization of a 650-V/13-A enhancement-mode GaN power transistor with p-GaN gate is presented. Critical device parameters such as…”
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GaN power IC technology on p -GaN gate HEMT platform by Wei, Jin, Tang, Gaofei, Xie, Ruiliang, Chen, Kevin J.

“…GaN power ICs provide an elegant solution for high-frequency power switching applications. This paper will first discuss the GaN power integration platform,…”
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Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs by Wei, Jin, Xie, Ruiliang, Xu, Han, Wang, Hanxing, Wang, Yuru, Hua, Mengyuan, Zhong, Kailun, Tang, Gaofei, He, Jiabei, Zhang, Meng, Chen, Kevin J.

“…The drain induced dynamic threshold voltage (V th ) shift of a p-GaN gate HEMT with a Schottky gate contact is investigated, and the underlying mechanisms are…”
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Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs by Xu, Han, Wei, Jin, Xie, Ruiliang, Zheng, Zheyang, He, Jiabei, Chen, Kevin J.

“…The threshold voltage ( V TH ) of an enhancement-mode Schottky-type p -GaN gate high-electron-mobility transistor (HEMT) is found to have a special dependence…”
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Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit by Xie, Ruiliang, Yang, Xu, Xu, Guangzhao, Wei, Jin, Wang, Yuru, Wang, Hanxing, Tian, Mofan, Zhang, Feng, Chen, Wenjie, Wang, Laili, Chen, Kevin J.

“…Commercially available normally -off GaN power high-electron-mobility transistor (HEMT) devices have typically adopted a p-GaN gate structure. In the gate…”
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Switching transient analysis for normally-off GaN transistors with p-GaN gate in a phase-leg circuit by Ruiliang Xie, Guangzhao Xu, Xu Yang, Hanxing Wang, Mofan Tian, Yidong Tian, Feng Zhang, Wenjie Chen, Laili Wang, Chen, Kevin J.

“…Gallium Nitride (GaN) transistors are emerging as promising candidates for making high-frequency, low-loss and small-size power converters. To realize…”
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An analytical model for false turn-on evaluation of GaN transistor in bridge-leg configuration by Ruiliang Xie, Hanxing Wang, Gaofei Tang, Xu Yang, Chen, Kevin J.

“…Gallium Nitride (GaN) transistors are especially attractive in their capability of switching at high frequencies, and enable power conversion systems with…”
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Maximizing the performance of 650 V p-GaN gate HEMTs: Dynamic ron characterization and gate-drive design considerations by Hanxing Wang, Ruiliang Xie, Cheng Liu, Jin Wei, Gaofei Tang, Chen, Kevin J.

“…This paper presents a systematic characterization of a 650 V/13 A enhancement-mode GaN power transistor with p-GaN gate. Static and dynamic device…”
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A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage by Xu, Han, Wei, Jin, Xie, Ruiliang, Zheng, Zheyang, Chen, Kevin J.

“…In this work, an equivalent-circuit model of Schottky type p-GaN gate power HEMT is proposed and demonstrated using SPICE tools. The SPICE model takes the…”
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A fixed switching frequency integral resonant sliding mode controller for three-phase grid-connected photovoltaic inverter with LCL-filter by Xiang Hao, Xu Yang, Ruiliang Xie, Lang Huang, Tao Liu, Yang Li

“…Sliding mode control (SMC) is recognized as robust controller with a high stability in a wide range of operating conditions, however it suffers from chattering…”
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A variable-band hysteresis modulated multi-resonant sliding-mode controller for three-phase grid-connected VSI with an LCL-filter by Yang Li, Xiang Hao, Xu Yang, Ruiliang Xie, Tao Liu

“…The control schemes of the VSI system have been studied worldwide for many years. However, most of the linear control methods can only achieve parts of the…”
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Stability analysis of single-phase grid-connected inverter with L-filter by Ruiliang Xie, Xiang Hao, Xu Yang, Lang Huang, Chao Wang, Yuehong Yang

“…As an important part of the distributed power generation system, grid-connected inverter has been widely used. However, as a time-varying nonlinear system, the…”
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An exact discrete-time model considering dead-time nonlinearity for an H-bridge grid-connected inverter by Ruiliang Xie, Xiang Hao, Xu Yang, Wenjie Chen, Lang Huang, Chao Wang

“…With the development of the renewable energy, grid-connected H-bridge inverter plays a more important role than ever. However, the dead-time and the zero…”
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Dynamic Threshold Voltage in p-GaN Gate HEMT by Wei, Jin, Xu, Han, Xie, Ruiliang, Zhang, Meng, Wang, Hanxing, Wang, Yuru, Zhong, Kailun, Hua, Mengyuan, He, Jiabei, Chen, Kevin J.

“…The p-GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage (V th ) of the device is found to have a dynamic nature. When…”
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The mitigating effects of the threshold voltage shifting on the false turn-on of GaN E-HEMTs by Xu, Guangzhao, Yang, Xu, Xie, Ruiliang, Zhang, Feng, Wang, Naizeng, Tian, Mofan, Jia, Haiyang, Wang, Laili

“…Enhancement mode Gallium Nitride High-electron-mobility Transistors (GaN E-HEMTs) have displayed a great potential in boosting performances for power…”
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Three-loop digital control strategy combining PI and Quasi-PR controller for high tracking precision power supply used in ZnO characteristics testing by Lang Huang, Xiang Hao, Xu Yang, Ting Liu, Ruiliang Xie, Tao Liu

“…In the zinc oxide (ZnO) varistor characteristics testing, high tracking precision and stability are required both for the output voltage and load current,…”
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A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode by Zhang, Feng, Yang, Xu, Xue, Wei, Xie, Ruiliang, Li, Yang, Sha, Yilin

“…A fast Thvenin equivalent model for IGBT considering the dynamic performance of both IGBT and antiparallel diode based on datasheet is proposed to increase the…”
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Modeling the gate driver IC for GaN transistor: A black-box approach by Xie, Ruiliang, Xu, Guangzhao, Yang, Xu, Tang, Gaofei, Wei, Jin, Tian, Yidong, Zhang, Feng, Chen, Wenjie, Wang, Laili, Chen, Kevin J.

“…During the switching performance evaluation for Si-based power devices, the gate driver IC's are commonly neglected because of Si device's slow switching…”
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Study on the Electricity Replacement Potential in Japan and South Korea Under the Northeast Asia Grid Interconnection Scenario by Zhang, Dong, Xie, Ruiliang

“…The paper studied the potentials of electricity replacement in different industries in Japan and South Korea from 2020 to 2050. Based on the influences…”
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