Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process

Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process

The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based se...

Full description

Saved in:
Bibliographic Details
Published in:Electronic materials letters Vol. 20; no. 1; pp. 49 - 55
Main Authors: Ruh, Woon Jae, Choi, Hyeon Jin, Kim, Jong Hoon, Jeon, Seung Woo, Noh, Young-Kyun, Yang, Mino, Kim, Young Heon
Format: Journal Article
Language:English
Published: Seoul The Korean Institute of Metals and Materials 2024
Springer Nature B.V
대한금속·재료학회
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed Matter Physics
Controllability
Gallium nitrides
Ion beams
Ion bombardment
Magnetics and Photonics
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Optical and Electronic Materials
Optoelectronic devices
Original Article - Electronics
Pyramids
Quantum efficiency
Sputtering
전자/정보통신공학
Optoelectronic device
Hexagonal pyramid
GaN-based semiconductor
Pillar structure
Focused ion-beam milling
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The formation of controllable 3D structures on the surface of layered optoelectronic devices using GaN-based semiconductors is important for improving the external quantum efficiency by enhancing the light-emitting efficiency. In this study, as-grown short hexagonal pillar structures on GaN-based semiconductors were transformed into a hexagonal pyramid shape during a focused ion-beam process. After forming the hexagonal pyramid shape, it was found that the size of the hexagonal pyramid can be adjusted by varying the sputtering time while preserving the pyramid shape. The transformation of the as-grown pillar structures to 3D hexagonal pyramids was demonstrated by analyzing the morphological evolution with the sputtering time by simulating the FIB process and calculating the effective ion bombardment area during sputtering. Graphical Abstract
ISSN:1738-8090
2093-6788
DOI:10.1007/s13391-023-00435-2