Search Results - "Ruffenach, S."

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  1. 1

    Temperature-driven massless Kane fermions in HgCdTe crystals by Teppe, F., Marcinkiewicz, M., Krishtopenko, S. S., Ruffenach, S., Consejo, C., Kadykov, A. M., Desrat, W., But, D., Knap, W., Ludwig, J., Moon, S., Smirnov, D., Orlita, M., Jiang, Z., Morozov, S. V., Gavrilenko, V.I., Mikhailov, N. N., Dvoretskii, S. A.

    Published in Nature communications (30-08-2016)
    “…It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in…”
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    Journal Article
  2. 2

    Temperature-Induced Topological Phase Transition in HgTe Quantum Wells by Kadykov, A M, Krishtopenko, S S, Jouault, B, Desrat, W, Knap, W, Ruffenach, S, Consejo, C, Torres, J, Morozov, S V, Mikhailov, N N, Dvoretskii, S A, Teppe, F

    Published in Physical review letters (23-02-2018)
    “…We report a direct observation of temperature-induced topological phase transition between the trivial and topological insulator states in an HgTe quantum…”
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    Journal Article
  3. 3

    Terahertz cyclotron emission from two-dimensional Dirac fermions by Gebert, S., Consejo, C., Krishtopenko, S. S., Ruffenach, S., Szola, M., Torres, J., Bray, C., Jouault, B., Orlita, M., Baudry, X., Ballet, P., Morozov, S. V., Gavrilenko, V. I., Mikhailov, N. N., Dvoretskii, S. A., Teppe, F.

    Published in Nature photonics (01-03-2023)
    “…Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was…”
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    Journal Article
  4. 4

    Large inverted band gap in strained three-layer InAs/GaInSb quantum wells by Avogadri, C., Gebert, S., Krishtopenko, S. S., Castillo, I., Consejo, C., Ruffenach, S., Roblin, C., Bray, C., Krupko, Y., Juillaguet, S., Contreras, S., Wolf, A., Hartmann, F., Höfling, S., Boissier, G., Rodriguez, J.-B., Nanot, S., Tournié, E., Teppe, F., Jouault, B.

    Published in Physical review research (01-12-2022)
    “…Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former,…”
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    Journal Article
  5. 5

    Optical, structural investigations and band-gap bowing parameter of GaInN alloys by Moret, M., Gil, B., Ruffenach, S., Briot, O., Giesen, Ch, Heuken, M., Rushworth, S., Leese, T., Succi, M.

    Published in Journal of crystal growth (01-05-2009)
    “…We have performed a detailed investigation of the photoluminescence features taken at 2 K on a series of Ga x In 1− x N alloys grown by metal-organic…”
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    Journal Article Conference Proceeding
  6. 6

    HgCdTe-based heterostructures for terahertz photonics by Ruffenach, S., Kadykov, A., Rumyantsev, V. V., Torres, J., Coquillat, D., But, D., Krishtopenko, S. S., Consejo, C., Knap, W., Winnerl, S., Helm, M., Fadeev, M. A., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I., Morozov, S. V., Teppe, F.

    Published in APL materials (01-03-2017)
    “…Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing…”
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    Journal Article
  7. 7

    Selectively excited photoluminescence from Eu-implanted GaN by Wang, K., Martin, R. W., O'Donnell, K. P., Katchkanov, V., Nogales, E., Lorenz, K., Alves, E., Ruffenach, S., Briot, O.

    Published in Applied physics letters (12-09-2005)
    “…The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition…”
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    Journal Article
  8. 8

    Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors by Kadykov, A. M., Teppe, F., Consejo, C., Viti, L., Vitiello, M. S., Krishtopenko, S. S., Ruffenach, S., Morozov, S. V., Marcinkiewicz, M., Desrat, W., Dyakonova, N., Knap, W., Gavrilenko, V. I., Mikhailov, N. N., Dvoretsky, S. A.

    Published in Applied physics letters (12-10-2015)
    “…We report on terahertz photoconductivity under magnetic field up to 16 T of field effect transistor based on HgTe quantum well (QW) with an inverted band…”
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    Journal Article
  9. 9

    Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities by De Vries, B., Wahl, U., Ruffenach, S., Briot, O., Vantomme, A.

    Published in Applied physics letters (21-10-2013)
    “…Using the electron emission channeling and Rutherford backscattering/channeling techniques, the influence of the mosaicity of a thin film on the axial…”
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    Journal Article
  10. 10

    Indium nitride quantum dots grown by metalorganic vapor phase epitaxy by Briot, O., Maleyre, B., Ruffenach, S.

    Published in Applied physics letters (06-10-2003)
    “…With respect to growing indium nitride quantum dots with very low surface densities for quantum cryptography applications, we have studied the metalorganic…”
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    Journal Article
  11. 11

    Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions by Benhamou-Bui, B., Consejo, C., Krishtopenko, S. S., Szola, M., Maussang, K., Ruffenach, S., Chauveau, E., Benlemqwanssa, S., Bray, C., Baudry, X., Ballet, P., Morozov, S. V., Gavrilenko, V. I., Mikhailov, N. N., Dvoretskii, S. A., Jouault, B., Torres, J., Teppe, F.

    Published in APL photonics (01-11-2023)
    “…Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic…”
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    Journal Article
  12. 12

    Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well by Krishtopenko, S. S., Ruffenach, S., Gonzalez-Posada, F., Consejo, C., Desrat, W., Jouault, B., Knap, W., Fadeev, M. A., Kadykov, A. M., Rumyantsev, V. V., Morozov, S. V., Boissier, G., Tournié, E., Gavrilenko, V. I., Teppe, F.

    Published in JETP letters (2019)
    “…The features of terahertz photoluminescence and magnetoabsorption in magnetic fields up to 16 T in threelayer InAs/GaSb/InAs quantum wells with a band…”
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    Journal Article
  13. 13

    The determination of the bulk residual doping in indium nitride films using photoluminescence by Moret, M., Ruffenach, S., Briot, O., Gil, B.

    Published in Applied physics letters (20-07-2009)
    “…We extend to any temperature, the sophisticated calculation of the evolution of the 2 K photoluminescence energy of InN proposed by Arnaudov et al. [Phys. Rev…”
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    Journal Article
  14. 14
  15. 15

    Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy by Ruffenach, S., Moret, M., Briot, O., Gil, B.

    Published in Applied physics letters (27-07-2009)
    “…Thermal annealing of InN layers grown by metal organic vapor phase epitaxy (MOVPE) is investigated in nitrogen atmosphere for temperatures ranging from 400 to…”
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    Journal Article
  16. 16

    High-temperature annealing and optical activation of Eu-implanted GaN by Lorenz, K., Wahl, U., Alves, E., Dalmasso, S., Martin, R. W., O'Donnell, K. P., Ruffenach, S., Briot, O.

    Published in Applied physics letters (04-10-2004)
    “…Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a…”
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    Journal Article
  17. 17

    Raman scattering study of wurtzite and rocksalt InN under high pressure by Pinquier, C., Demangeot, F., Frandon, J., Chervin, J.-C., Polian, A., Couzinet, B., Munsch, P., Briot, O., Ruffenach, S., Gil, B., Maleyre, B.

    “…Indium nitride under high pressure up to 50 GPa was analyzed by means of Raman spectroscopy. The wurtzite to rocksalt phase transition was evidenced at the…”
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    Journal Article
  18. 18

    Misfit relaxation of InN quantum dots: Effect of the GaN capping layer by Lozano, J. G., Sánchez, A. M., García, R., Gonzalez, D., Briot, O., Ruffenach, S.

    Published in Applied physics letters (10-04-2006)
    “…The strain state on InN quantum dots (QDs) over GaN /sapphire substrates was analyzed by transmission electron microscopy. Changes in the in-plane lattice…”
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    Journal Article
  19. 19

    Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms by DEMANGEOT, F, PINQUIER, C, FRANDON, J, GAIO, M, BRIOT, O, MALEYRE, B, RUFFENACH, S, GIL, B

    “…We have studied plasmon-longitudinal optical (LO) phonon coupled modes by means of Raman scattering in n-type InN layers grown by metalorganic vapor phase…”
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    Journal Article
  20. 20

    Magnetospectroscopy of double HgTe/CdHgTe quantum wells by Bovkun, L. S., Krishtopenko, S. S., Ikonnikov, A. V., Aleshkin, V. Ya, Kadykov, A. M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Orlita, M., Piot, B., Potemski, M., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2016)
    “…The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in…”
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    Journal Article