Search Results - "Ruffenach, S."
-
1
Temperature-driven massless Kane fermions in HgCdTe crystals
Published in Nature communications (30-08-2016)“…It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in…”
Get full text
Journal Article -
2
Temperature-Induced Topological Phase Transition in HgTe Quantum Wells
Published in Physical review letters (23-02-2018)“…We report a direct observation of temperature-induced topological phase transition between the trivial and topological insulator states in an HgTe quantum…”
Get full text
Journal Article -
3
Terahertz cyclotron emission from two-dimensional Dirac fermions
Published in Nature photonics (01-03-2023)“…Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was…”
Get full text
Journal Article -
4
Large inverted band gap in strained three-layer InAs/GaInSb quantum wells
Published in Physical review research (01-12-2022)“…Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former,…”
Get full text
Journal Article -
5
Optical, structural investigations and band-gap bowing parameter of GaInN alloys
Published in Journal of crystal growth (01-05-2009)“…We have performed a detailed investigation of the photoluminescence features taken at 2 K on a series of Ga x In 1− x N alloys grown by metal-organic…”
Get full text
Journal Article Conference Proceeding -
6
HgCdTe-based heterostructures for terahertz photonics
Published in APL materials (01-03-2017)“…Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing…”
Get full text
Journal Article -
7
Selectively excited photoluminescence from Eu-implanted GaN
Published in Applied physics letters (12-09-2005)“…The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition…”
Get full text
Journal Article -
8
Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors
Published in Applied physics letters (12-10-2015)“…We report on terahertz photoconductivity under magnetic field up to 16 T of field effect transistor based on HgTe quantum well (QW) with an inverted band…”
Get full text
Journal Article -
9
Influence of crystal mosaicity on axial channeling effects and lattice site determination of impurities
Published in Applied physics letters (21-10-2013)“…Using the electron emission channeling and Rutherford backscattering/channeling techniques, the influence of the mosaicity of a thin film on the axial…”
Get full text
Journal Article -
10
Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
Published in Applied physics letters (06-10-2003)“…With respect to growing indium nitride quantum dots with very low surface densities for quantum cryptography applications, we have studied the metalorganic…”
Get full text
Journal Article -
11
Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions
Published in APL photonics (01-11-2023)“…Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic…”
Get full text
Journal Article -
12
Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well
Published in JETP letters (2019)“…The features of terahertz photoluminescence and magnetoabsorption in magnetic fields up to 16 T in threelayer InAs/GaSb/InAs quantum wells with a band…”
Get full text
Journal Article -
13
The determination of the bulk residual doping in indium nitride films using photoluminescence
Published in Applied physics letters (20-07-2009)“…We extend to any temperature, the sophisticated calculation of the evolution of the 2 K photoluminescence energy of InN proposed by Arnaudov et al. [Phys. Rev…”
Get full text
Journal Article -
14
Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells
Published in JETP letters (01-12-2017)“…Cyclotron resonance spectra in high magnetic fields up to 34 T in InAs/GaSb/InAs “three-layer” quantum wells with gapless Dirac fermions have been studied. In…”
Get full text
Journal Article -
15
Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy
Published in Applied physics letters (27-07-2009)“…Thermal annealing of InN layers grown by metal organic vapor phase epitaxy (MOVPE) is investigated in nitrogen atmosphere for temperatures ranging from 400 to…”
Get full text
Journal Article -
16
High-temperature annealing and optical activation of Eu-implanted GaN
Published in Applied physics letters (04-10-2004)“…Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a…”
Get full text
Journal Article -
17
Raman scattering study of wurtzite and rocksalt InN under high pressure
Published in Physical review. B, Condensed matter and materials physics (01-03-2006)“…Indium nitride under high pressure up to 50 GPa was analyzed by means of Raman spectroscopy. The wurtzite to rocksalt phase transition was evidenced at the…”
Get full text
Journal Article -
18
Misfit relaxation of InN quantum dots: Effect of the GaN capping layer
Published in Applied physics letters (10-04-2006)“…The strain state on InN quantum dots (QDs) over GaN /sapphire substrates was analyzed by transmission electron microscopy. Changes in the in-plane lattice…”
Get full text
Journal Article -
19
Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms
Published in Physical review. B, Condensed matter and materials physics (01-03-2005)“…We have studied plasmon-longitudinal optical (LO) phonon coupled modes by means of Raman scattering in n-type InN layers grown by metalorganic vapor phase…”
Get full text
Journal Article -
20
Magnetospectroscopy of double HgTe/CdHgTe quantum wells
Published in Semiconductors (Woodbury, N.Y.) (01-11-2016)“…The magnetoabsorption spectra in double HgTe/CdHgTe quantum wells (QWs) with normal and inverted band structures are investigated. The Landau levels in…”
Get full text
Journal Article