Search Results - "Ruess, F J"

Atomically precise placement of single dopants in si by Schofield, S R, Curson, N J, Simmons, M Y, Ruess, F J, Hallam, T, Oberbeck, L, Clark, R G

“…We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We…”
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Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy by Fuhrer, A, Rueß, F J, Moll, N, Curioni, A, Widmer, D

“…At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form…”
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Measurement of quantum states of neutrons in the Earth’s gravitational field by Nesvizhevsky, V. V., Börner, H. G., Gagarski, A. M., Petoukhov, A. K., Petrov, G. A., Abele, H., Baeßler, S., Divkovic, G., Rueß, F. J., Stöferle, Th, Westphal, A., Strelkov, A. V., Protasov, K. V., Voronin, A. Yu

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Electronic properties of atomically abrupt tunnel junctions in silicon by Rueß, F. J., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y.

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Progress in silicon-based quantum computing by Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.

“…We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on…”
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Scanning probe microscopy for silicon device fabrication by Simmons, M.Y., Ruess, F.J., Goh, K.E.J., Hallam, T., Schofield, S.R., Oberbeck, L., Curson, N.J., Hamilton, A.R., Butcher, M.J., Clark, R.G., Reusch, T.C.G.

“…We present a review of a detailed fabrication strategy for the realisation of nano and atomic-scale devices in silicon using phosphorus as a dopant and a…”
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Quantum states of neutrons in the Earth's gravitational field by Nesvizhevsky, Valery V, Börner, Hans G, Petukhov, Alexander K, Abele, Hartmut, Baeßler, Stefan, Rueß, Frank J, Stöferle, Thilo, Westphal, Alexander, Gagarski, Alexei M, Petrov, Guennady A, Strelkov, Alexander V

“…The discrete quantum properties of matter are manifest in a variety of phenomena. Any particle that is trapped in a sufficiently deep and wide potential well…”
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Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures by Rueß, F. J., Micolich, A. P., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y.

“…We investigate the conduction properties of an embedded, highly phosphorus-doped nanowire with a width of 8nm lithographically defined by scanning tunneling…”
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Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy by Hallam, T., Rueß, F. J., Curson, N. J., Goh, K. E. J., Oberbeck, L., Simmons, M. Y., Clark, R. G.

“…We present a high resolution scanning tunneling microscope (STM) study of the thermal desorption of hydrogen resist layers used for STM-based lithography on…”
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Ohmic conduction of sub- 10 nm P-doped silicon nanowiresat cryogenic temperatures by Rueß, F. J., Micolich, A. P., Pok, W., Goh, K. E. J., Hamilton, A. R., Simmons, M. Y.

“…We investigate the conduction properties of an embedded, highly phosphorus-doped nanowire with a width of 8 nm lithographically defined by scanning tunneling…”
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Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer by Oberbeck, L., Curson, N.J., Hallam, T., Simmons, M.Y., Goh, K.E.J., Schofield, S.R., Ruess, F.J., Clark, R.G.

“…To optimise the fabrication process for a silicon based quantum computer the surface segregation/diffusion of phosphorus atoms in silicon is investigated on an…”
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Structural and electrical characterization of room temperatureultra-high-vacuum compatible Si O 2 for gating scanning tunneling microscope-patterned devices by Scappucci, G., Ratto, F., Thompson, D. L., Reusch, T. C. G., Pok, W., Rueß, F. J., Rosei, F., Simmons, M. Y.

“…We present an ultrahigh vacuum technique for depositing SiO 2 at room temperature using an atomic oxygen source and Si coevaporation for ultimate use as a…”
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Structural and electrical characterization of room temperature ultra-high-vacuum compatible SiO2 for gating scanning tunneling microscope-patterned devices by Scappucci, G., Ratto, F., Thompson, D. L., Reusch, T. C. G., Pok, W., Rueß, F. J., Rosei, F., Simmons, M. Y.

“…We present an ultrahigh vacuum technique for depositing SiO2 at room temperature using an atomic oxygen source and Si coevaporation for ultimate use as a…”
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Effective removal of hydrogen resists used to pattern devicesin silicon using scanning tunneling microscopy by Hallam, T., Rueß, F. J., Curson, N. J., Goh, K. E. J., Oberbeck, L., Simmons, M. Y., Clark, R. G.

“…We present a high resolution scanning tunneling microscope (STM) study of the thermal desorption of hydrogen resist layers used for STM-based lithography on…”
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Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy by Ruess, Frank J, Oberbeck, Lars, Simmons, Michelle Y, Goh, Kuan Eng J, Hamilton, Alex R, Hallam, Toby, Schofield, Steven R, Curson, Neil J, Clark, Robert G

“…We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In…”
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Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy by Fuhrer, A, Rueß, F. J, Moll, N, Curioni, A, Widmer, D

“…At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form…”
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Atomically precise placement of single dopants in Si by Schofield, S. R, Curson, N. J, Simmons, M. Y, Ruess, F. J, Hallam, T, Oberbeck, L, Clark, R. G

“…We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We…”
Get full text

Measurement of quantum states of neutrons in the Earth's gravitational field by Nesvizhevsky, V. V, Boerner, H. G, Gagarsky, A. M, Petoukhov, A. K, Petrov, G. A, Abele, H, Baessler, S, Divkovic, G, Ruess, F. J, Stoeferle, Th, Westphal, A, Strelkov, A. V, Protasov, K. V, Voronin, A. Yu

“…Phys.Rev. D67 (2003) 102002 The lowest stationary quantum state of neutrons in the Earth's gravitational field is identified in the measurement of neutron…”
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