Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt convection is presented. Global heat and mass transport is calculated using an axisymmetrical quasi-steady-state approximation with accounting for...

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Bibliographic Details
Published in:	Microelectronic engineering Vol. 56; no. 1; pp. 139 - 142
Main Authors:	Evstratov, I.Yu, Kalaev, V.V, Nabokov, V.N, Zhmakin, A.I, Makarov, Yu.N, Abramov, A.G, Ivanov, N.G, Rudinsky, E.A, Smirnov, E.M, Lowry, S.A, Dornberger, E, Virbulis, J, Tomzig, E, Ammon, W.v
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-05-2001 Elsevier Science
Subjects:	Czochralski crystal growth Oxygen transport Silicon Simulation Turbulent convection Czochralski crystal growth Turbulent convection Silicon Simulation Oxygen transport
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Summary:	A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt convection is presented. Global heat and mass transport is calculated using an axisymmetrical quasi-steady-state approximation with accounting for radiative heat exchange, heat conduction in solid parts, inert gas flow, and turbulent melt convection. The global transport calculations provide adequate boundary conditions for comprehensive investigation of melt turbulent convection using 3D LES. The LES of the melt flow describes the temperature distribution and impurity transport in the melt much better than 2D turbulent flow models. Moreover, the 3D calculations provide complete information with respect to thermal fluctuations in the melt and to non-uniformity of the crystallization process at the melt–crystal interface.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0167-9317 1873-5568
DOI:	10.1016/S0167-9317(00)00516-5