Search Results - "Rudenko, T.E."

The advancement of silicon-on-insulator (SOI) devices and their basic properties by Rudenko, T.E., Nazarov, A.N., Lysenko, V.S.

“…Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon…”
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Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC by Rudenko, T.E., Osiyuk, I.N., Tyagulski, I.P., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö.

“…This work presents detailed investigations of interface traps at the Si-face 4H– and 6H–SiC/SiO 2 interfaces using thermally stimulated current (TSC) and…”
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Analysis of the electron traps at the 4H-SiC/SiO 2 interface using combined CV/thermally stimulated current measurements by Rudenko, T.E., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö., Osiyuk, I.P., Tyagulski, I.P.

“…The interface traps at the 4H-SiC/SiO 2 interface are studied using thermally stimulated current (TSC) and CV-techniques. We demonstrate that the electron…”
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Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements by RUDENKO, T. E, OLAFSSON, H. O, SVEINBJÖRNSSON, E. O, OSIYUK, I. P, TYAGULSKI, I. P

“…The interface traps at the 4H-SiC/SiO2 interface are studied using thermally stimulated current (TSC) and CV-techniques. We demonstrate that the electron traps…”
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Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric by Barchuk, I.P., Kilchitskaya, V.I., Lysenko, V.S., Nazarov, A.N., Rudenko, T.E., Djurenko, S.V., Rudenko, A.N., Yurchenko, A.P., Ballutaud, D.B., Colinge, J.-P.

“…In this work SOI structures with buried SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ layers have been fabricated by the ZMR-technique with the aim of improving the…”
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Diffusion model for high-temperature off-state currents in SOI MOSFETs by Rudenko, T.E., Kilchitskaya, V.I., Rudenko, A.N.

“…In this paper off-state drain currents in long-channel inversion mode SOI MOSFETs are investigated in the range 50–320°C by measurements and simulations. The…”
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Carrier lifetime extraction in fully-depleted SOI devices by Ernst, T., Cristoloveanu, S., Vandooren, A., Colinge, J.-P., Rudenko, T.E.

“…A special current peak in P/sup +/P/sup -/N/sup +/ dual-gate diodes is observed, simulated and analytically modeled. A new simple experimental method to…”
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Characterization of SOI by capacitance and current measurements with combined gated diode and depletion-mode MOSFET structure by Rudenko, T.E., Rudenko, A.N., Nazarov, A.N., Lysenko, V.S.

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