Search Results - "Rudenko, K."
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1
To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time
Published in Russian microelectronics (01-09-2021)“…In this review of experimental studies, the retention time and endurance of memristor RRAM memory elements based on reversible resistive switching in oxide…”
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2
REDUCTION OF THE DEGREE OF EMBRYOTOXICITY OF CADMIUM CHLORIDE IN COMBINED INTRODUCTION WITH COPPER SUCCINATE IN EXPERIMENT IN RATS
Published in Visnyk problem biolohiï i medyt︠s︡yny (01-12-2020)“… Interest in studying the impact of habitat quality on the growth of so-called diseases of civilization or non-communicable diseases has increased…”
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3
Analytical comparison of atomic layer deposition of oxide films inside trench and hole nanostructures
Published in Thin solid films (28-02-2019)“…A comparative theoretical analysis of the atomic-layer deposition is implemented for trenches and cylindrical holes. The precursor insertion duration necessary…”
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4
Evolution of the Current–Voltage Characteristic of a Bipolar Memristor
Published in Russian microelectronics (2024)“…A theoretical model is proposed that is capable of describing the current–voltage characteristic for a bipolar filament-type memristor during reversible…”
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5
Technological Approaches for Formation of High-Density Integral Capacitors: Deep Etching and Atomic Layer Deposition
Published in Russian microelectronics (01-12-2023)“…The results of a study of promising technologies for the formation of trench and planar integrated capacitors with a high specific capacitance per unit of chip…”
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6
Ruthenium for Subtractive and Semi-Damascene Processes of Interconnects Formation
Published in Russian microelectronics (01-12-2023)“…Ruthenium thin films were deposited by plasma enhanced atomic layer deposition (PEALD) using Ru(EtCp) 2 and oxygen plasma on the modified silicon surface and…”
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7
Investigation of Fluorocarbon Film Deposition from Ar/CF4/H2 Plasma for the Implementation of the Atomic Layer Etching Process
Published in High energy chemistry (01-10-2023)“…Plasma was diagnosed using Langmuir probe and optical actinometry methods, and growth rates of films or etching of surfaces of functional layers from Ar/CF 4…”
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8
Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures
Published in Semiconductors (Woodbury, N.Y.) (01-03-2024)“…The mechanism of resistive switching in Pt/HfO 2 (8 nm)/HfO X N Y (4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive…”
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9
Cryo Plasma Etching of Porous Low-k Dielectrics
Published in High energy chemistry (01-10-2023)“…Non-destructive plasma etching processes for dielectrics with ultra-low dielectric constant are relevant for forming metallization systems of integrated…”
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10
Thermal Stability of Ferroelectric Films Based on Hafnium–Zirconium Dioxide on Silicon
Published in Bulletin of the Russian Academy of Sciences. Physics (01-06-2023)“…Results are presented that testify to an increase in the thermal stability and structural and electrical properties of films obtained via plasma-stimulated…”
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11
Analysis of the Effects Influencing the Retention Time of Filament-Based Memristors
Published in Russian microelectronics (2022)“…A theoretical model that describes the degradation of the resistive states of the memristor over time has been proposing. It has been showing that the current…”
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12
Parameters and Composition of Plasma in a CF4 + H2 + Ar Mixture: Effect of CF4/H2 Ratio
Published in Russian microelectronics (01-02-2024)“…The electrophysical parameters of the plasma and the kinetics of plasma-chemical processes in a CF 4 + H 2 + Ar mixture while varying the CF 4 /H 2 ratio are…”
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13
Development of the Culture of Dissertation Research in Archaeology in the Kazan Governorate and the TASSR during the 1910s–1940s
Published in Uchenye zapiski Kazanskogo universiteta. Serii͡a︡ Gumanitarnye nauki (24-10-2023)“…This article discusses the development of the culture of dissertation research in archaeology in the Kazan Governorate and the TASSR between the 1910s and…”
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14
Tapered Silicon Oxide Etching for Creation of Capacitor Structures for Measurement of Dielectric Characteristics
Published in Russian microelectronics (01-12-2023)“…The article develops the possibility of forming silicon oxide structures with tapered walls using dry etching methods, including a two-stage process involving…”
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15
Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
Published in Journal of materials science (01-05-2018)“…The influence of annealing in the temperature range of 150–300 °C during plasma-enhanced atomic layer deposition of HfO 2 and the conditions of the following…”
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16
Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers
Published in Solid-state electronics (01-09-2019)“…•SOI and SOS pseudo-MOSFETs with 20 nm hafnia interlayers show normal gate-drain characteristics after annealing ≥ 1000 °C with the carrier mobility as in bulk…”
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17
Atomic Layer Deposition of Thin Films onto 3D Nanostructures: The Effect of Wall Tilt Angle and Aspect Ratio of Trenches
Published in Technical physics (01-10-2018)“…A theoretical model predicting the spatial profile of a film grown on walls by atomic layer deposition (ALD) is developed. The possible initial nonverticality…”
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18
Pathobiochemical aspects of alcoholic cardiomyopathy. The role of hydrogen sulfide in the mechanism of cardiocytoprotection (a review)
Published in Zaporozhskiĭ medit͡s︡inskiĭ zhurnal (01-05-2022)“…Aim: systematization of knowledge about the pathobiochemical mechanisms of heart disease in alcoholic cardiomyopathy (ACMP) and the search for promising ways…”
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19
Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics
Published in Russian microelectronics (2022)“…In the development of promising ULIS scaling technologies, one of the key roles is played by porous dielectrics with a low permittivity used to isolate…”
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20
Erratum to: Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics
Published in Russian microelectronics (2022)“…An Erratum to this paper has been published: https://doi.org/10.1134/S1063739722550017…”
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