Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness

[Display omitted] •Functional Schottky barrier diodes based on 4H-SiC epitaxial layer were fabricated.•Typical reverse current of measured 4H-SiC diodes was below 3 pA/mm2.•Estimated Schottky barrier height was about 1.30 eV at room temperature.•Capacitance-voltage measurements revealed the doping c...

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Bibliographic Details
Published in:	Applied surface science Vol. 536; p. 147801
Main Authors:	Zaťko, Bohumír, Hrubčín, Ladislav, Šagátová, Andrea, Osvald, Jozef, Boháček, Pavol, Kováčová, Eva, Halahovets, Yuriy, Rozov, Sergey V., Sandukovskij, V.G.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 15-01-2021
Subjects:	4H-SiC Alpha particle spectrometry Schottky barrier height Semiconductor detector Alpha particle spectrometry Semiconductor detector 4H-SiC Schottky barrier height
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Summary:	[Display omitted] •Functional Schottky barrier diodes based on 4H-SiC epitaxial layer were fabricated.•Typical reverse current of measured 4H-SiC diodes was below 3 pA/mm2.•Estimated Schottky barrier height was about 1.30 eV at room temperature.•Capacitance-voltage measurements revealed the doping concentration below 8 × 1013 cm−3.•Energy resolution of 20 keV was reached in detection of α-particles from 238Pu source. Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky contacts and a back-side full-area Ti/Pt/Au ohmic contact. Current-voltage characteristics in the reverse and forward directions of prepared detector structures were measured. The typical reverse current of the detector structure was below 50 pA at room temperature. The Schottky barrier height, series resistance and ideality factor were evaluated from the forward part of the current-voltage characteristics, and they were 1.3 eV, 1.33, and 638 Ω, respectively. Capacitance-voltage measurement of the detectors up to 600 Vwas also realized. This provided data to calculate the depletion width, concentration profile and barrier height. The lowest doping concentration of about 7 × 1013 cm−3 was determined. The spectrometric performance of the Schottky barrier detector structures was analyzed using an α-particle radioisotope source. The detector structures demonstrated a high energy resolution below 20 keV in the full width at half maximum for 5.5 MeV α-particles.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2020.147801