Search Results - "Rowland, W. H."

MBE growth and properties of ZnO on sapphire and SiC substrates by Johnson, M. A. L., Fujita, Shizuo, Rowland, W. H., Hughes, W. C., Cook, J. W., Schetzina, J. F.

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Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates by Hughes, W. C., Rowland, W. H., Johnson, M. A. L., Fujita, Shizuo, Cook, J. W., Schetzina, J. F., Ren, J., Edmond, J. A.

“…Two types of nitrogen plasma sources, an electron cyclotron resonance (ECR) plasma source and a radio frequency (rf) plasma source, were used for the growth of…”
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Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy by Johnson, M.A.L., Hughes, W.C., Rowland, W.H., Cook, J.W., Schetzina, J.F., Leonard, M., Kong, H.S., Edmond, J.A., Zavada, J.

“…GaN, AlGaN and InGaN films have been grown by molecular beam epitaxy (MBE) using RF plasma sources for the generation of active nitrogen. These films have been…”
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II–VI blue/green laser diodes on ZnSe substrates by Boney, C., Yu, Z., Rowland, W. H., Hughes, W. C., Cook, J. W., Schetzina, J. F., Cantwell, Gene, Harsch, William C.

“…This article reports the first blue/green laser diodes grown on ZnSe substrates. The laser structure employed is a p‐on‐n separate confinement heterostructure…”
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MBE growth and properties of GaN on GaN/SiC substrates by Johnson, M.A.L., Fujita, Shizuo, Rowland, W.H., Bowers, K.A., Hughes, W.C., He, Y.W., El Masry, N.A., Cook, J.W., Schetzina, J.F., Ren, J., Edmond, J.A.

“…Growth of III–V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an r.f. nitrogen plasma source. GaN SiC substrates consisting of ∼ 3 μm…”
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MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates by Johnson, M. A. L., Fujita, Shizuo, Rowland, W. H., Hughes, W. C., He, Y. W., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Ren, J., Edmond, J. A.

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High‐brightness II–VI light‐emitting diodes grown by molecular‐beam epitaxy on ZnSe substrates by Yu, Z., Eason, D. B., Boney, C., Ren, J., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Cantwell, G., Harsch, W. C.

“…High‐brightness blue and green light‐emitting diodes (LEDs) based on II–VI double heterostructures (DHs) have been successfully grown by molecular‐beam epitaxy…”
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MBE growth and properties of ZnO on sapphire and SiC substrates: III-V Nitrides and silicon carbide by JOHNSON, M. A. L, FUJITA, S, ROWLAND, W. H, HUGHES, W. C, COOK, J. W, SCHETZINA, J. F

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MBE growth and properties of GaN and AlxGa1-xN on GaN/SiC substrates: III-V Nitrides and silicon carbide by JOHNSON, M. A. L, FUJITA, S, ROWLAND, W. H, HUGHES, W. C, HE, Y. W, EL-MASRY, N. A, COOK, J. W, SCHETZINA, J. F, REN, J, EDMOND, J. A

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Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy by JOHNSON, M. A. L, HUGHES, W. C, ROWLAND, W. H, COOK, J. W, SCHETZINA, J. F, LEONARD, M, KONG, H. S, EDMOND, J. A, ZAVADA, J

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Molecular beam epitaxy growth and properties of GaN, Al x Ga1−x N, and AlN on GaN/SiC substrates by Johnson, M. A. L., Fujita, Shizuo, Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., El‐Masry, N. A., Cook, J. W., Schetzina, J. F., Ren, J., Edmond, J. A.

“…The thin film growth of GaN, AlGaN, and AlN on GaN/SiC substrates by molecular beam epitaxy (MBE) has been studied. The GaN/SiC substrates consisted of…”
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